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Part: S974T
Category:
Description: MOSmic For Tv-tuner Prestage With 9 V Supply Voltage
Company: Telefunken (acquired by Vishay Intertechnology)
Datasheet: Download S974T datasheet File size : 78 kB
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Datasheet text preview:
S974T/S974TR/S974TRW
Vishay Telefunken
MOSMIC® for TVTuner Prestage with 9 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and VHF- tuner with 9 V supply voltage.
AGC RF in C block C block G2 G1 S D RF out C block
94 9296
RFC VD D
Features
D Easy Gate 1 switch-off with PNP switching transistors inside PLL
D High AGC-range with less steep slope D Integrated gate protection diodes
2 1
D D D D
Low noise figure High gain Improved cross modulation at gain reduction SMD package
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
S974T Marking: 974 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S974TR Marking: 97R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
S974TRW Marking: W97 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85063 Rev. 3, 20-Jan-99
www.vishay.de · FaxBack +1-408-970-5600 1 (6)
S974T/S974TR/S974TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 ±VG1/G2SM 6 Ptot 200 T Ch 150 Tstg 55 to +150 Unit V mA mA V mW °C °C
Tamb 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain - source operating current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage Test Conditions ±IG1S = 10 mA, VG2S = VG1S = 0 ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = VRG1 = 9 V, VG2S = 4 V, RG1 = 390 kW VDS = VRG1 = 9 V, VG2S = 4 V, ID = 100 mA VDS = VRG1 = 9 V, RG1 = 390 kW, ID = 100 mA Symbol ±V(BR)DSS ±V(BR)G1SS ±V(BR)G2SS +IG1SS ±IG2SS IDSO VG1S(OFF) VG2S(OFF) 8 0.4 1.0 12 Min 15 7 7 Typ Max Unit V 10 10 20 20 16 1.2 V V nA nA mA V V
Remark on improving intermodulation behavior:
By setting RG1 = 300 kW instead of 390 kW, typical value of IDSO will raise up to about 15 mA and improved intermodulation behavior will be performed.
www.vishay.de · FaxBack +1-408-970-5600 2 (6)
Document Number 85063 Rev. 3, 20-Jan-99
S974T/S974TR/S974TRW
Vishay Telefunken Electrical AC Characteristics
VDS = 9 V, VG2S = 4 V, ID = 12 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol y21s Cissg1 Crss Coss Gps Gps DGps F F Min 28 Typ 2.3 25 1.1 28 21 1 1.3 Max Unit 35 mS 2.7 pF fF pF dB dB dB dB dB
GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 9 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz
17 45
Document Number 85063 Rev. 3, 20-Jan-99
www.vishay.de · FaxBack +1-408-970-5600 3 (6)
Others parts begin by s9
S9-1 S9-2
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