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Part: S350P
Category: Discrete -> Transistors -> Bipolar -> Audio Amplifier Application -> NPN
Description: Silicon NPN Phototransistor
Company: Telefunken (acquired by Vishay Intertechnology)
Datasheet: Download S350P datasheet File size : 122 kB
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Datasheet text preview:
S350P
Vishay Telefunken
Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead centertocenter spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of unlimited size. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with lp > 850nm.
Features
D D D D D
High radiant sensitivity Miniature T¾ flat plastic package with IR filter Very wide angle of half sensitivity = ± 40° Suitable for near infrared radiation Suitable for 0.1" (2.54 mm) centertocenter spacing
94 8640
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 32 5 50 100 100 100 55...+100 260 450 Unit V V mA mA mW °C °C °C K/W
tp/T = 0.5, tp 10 ms Tamb 55 °C
x
x
t
x3s
Document Number 81543 Rev. 2, 20-May-99
www.vishay.de · FaxBack +1-408-970-5600 1 (5)
S350P
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Collector Light Current Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Ee = 1 mW/cm2, l = 950 nm, VCE = 5 V Symbol V(BR)CE
O
Min 32
Typ
Max
Unit V nA pF mA deg nm nm V
ICEO CCEO Ica lp l0.5 VCEsat ton toff fc
0.2
2 6 1 ±40 925 860...990
200
Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee = 1 mW/cm2, Voltage l = 950 nm, IC = 0.1 mA TurnOn Time VS = 5 V, IC = 5 mA, RL = 100 W TurnOff Time VS = 5 V, IC = 5 mA, RL = 100 W CutOff Frequency VS = 5 V, IC = 5 mA, RL = 100 W
0.3 6 5 110
ms ms
kHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125 P tot Total Power Dissipation ( mW ) 100 I CEO Collector Dark Current ( nA ) 104
103 VCE=20V 102
75 RthJA 50
25 0 0 20 40 60 80 100
101
100 20
94 8260
40
60
80
100
94 8308
Tamb Ambient Temperature ( °C )
Tamb Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
www.vishay.de · FaxBack +1-408-970-5600 2 (5)
Document Number 81543 Rev. 2, 20-May-99
S350P
Vishay Telefunken
2.0 I ca rel Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0
94 8239
C CEO Collector Emitter Capacitance ( pF )
20 16 f=1MHz
VCE=5V Ee=1mW/cm2 l=950nm
12
8
4 0 0.1 1 10 100 VCE Collector Emitter Voltage ( V )
20
40
60
80
100
94 8247
Tamb Ambient Temperature ( °C )
Figure 3. Relative Collector Current vs. Ambient Temperature
t on / t off Turn on / Turn off Time ( m s ) 10 Ica Collector Light Current ( mA )
Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage
12 10 8 6 4 2 0 ton VCE=5V RL=100W l=950nm
1
0.1 VCE=5V l=950nm
0.01
toff
0.001 0.01
94 8255
0.1 Ee Irradiance (
1 mW / cm2 )
10
94 8253
0
4
8
12
16
IC Collector Current ( mA )
Figure 4. Collector Light Current vs. Irradiance
10 Ica Collector Light Current ( mA )
l=950nm
Figure 7. Turn On/Turn Off Time vs. Collector Current
S ( l ) rel Relative Spectral Sensitivity
1.0 0.8 0.6 0.4 0.2 0 700
Ee=1 mW/cm2 1 0.5 mW/cm2 0.2 mW/cm2 0.1 0.1 mW/cm2
0.01 0.1
94 8256
1
10
100
94 8261
800
VCE Collector Emitter Voltage ( V )
l Wavelength ( nm )
900
1000
1100
Figure 5. Collector Light Current vs. Collector Emitter Voltage
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81543 Rev. 2, 20-May-99
www.vishay.de · FaxBack +1-408-970-5600 3 (5)
Others parts begin by s3
S3-1 S3-2 S3-3 S3-4
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