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Part: HYS64V16220GU-10
Category:
Memory
-> DRAM
-> DDR SDRAM
Description: 3.3 V 8m X 64/72-bit 1 Bank Sdram Module 3.3 V 16m X 64/72-bit 2 Bank Sdram Module
Company: Siemens (acquired by Infineon Technologies Corporation)
Datasheet: Download HYS64V16220GU-10 datasheet File size : 1224 kB
Request For quote: Find where to buy HYS64V16220GU-10
Datasheet text preview:
3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168 pin unbuffered DIMM Modules
HYS 64/72V8200GU HYS 64/72V16220GU
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168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 8M × 64, 8M × 72 and 2 bank 16M × 64, 16M × 72 organization Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL's Rev. 1.0 module specification SDRAM Performance -8 -8B 100 6 -10 66 8 Units MHz ns
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fCK tAC
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Clock frequency (max.) Clock access time
100 6
Programmed Latencies Product Speed -8 -8B -10 PC100 PC100 PC66 CL 2 3 2
tRCD
2 2 2
tRP
2 3 2
· ·
Single + 3.3 V (± 0.3 V ) power supply Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh Decoupling capacitors mounted on substrate All inputs, outputs are LVTTL compatible Serial Presence Detect with E2PROM Utilizes 8M × 8 SDRAMs in TSOPII-54 packages 4096 refresh cycles every 64 ms 133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads
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Semiconductor Group
1
1998-08-01
HYS 64(72)V8200/16220GU-8/-10 SDRAM Modules
The HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 bank and 16M × 64 and 16M × 72 in two banks high speed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8 SDRAM devices in TSOP-54 packages to meet the PC100 requirement. Modules which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL's PC SDRAM Rev. 1.0 module specification. The DIMMs have a serial presence detect, implemented with a serial E2PROM using the two pin I2C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user. All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133.35 mm long footprint, with 1.25" ( 31.75 mm) height.
Ordering Information Type HYS 64V8200GU-8 HYS 72V8200GU-8 HYS 64V16220GU-8 HYS 72V16220GU-8 HYS 64V8200GU-8B Ordering Code Package Descriptions Module Height 1.25" 1.25" 1.25" 1.25" 1.25" 1.25" 1.25" 1.25" 1.25" 1.25"
PC100-222-620 L-DIM-168-30 100 MHz 8M × 64 1 bank SDRAM module PC100-222-620 L-DIM-168-30 100 MHz 8M × 72 1 bank SDRAM module PC100-222-620 L-DIM-168-30 100 MHz 16M × 64 2 bank SDRAM module PC100-222-620 L-DIM-168-30 100 MHz 16M × 72 2 bank SDRAM module PC100-323-620 L-DIM-168-30 100 MHz 8M × 64 1 bank SDRAM module
HYS 64V16220GU-8B PC100-323-620 L-DIM-168-30 100 MHz 16M × 64 2 bank SDRAM module HYS 64V8200GU-10 HYS 72V8200GU-10 PC66-222-920 PC66-222-920 L-DIM-168-30 66 MHz 8M × 64 1 bank SDRAM module L-DIM-168-30 66 MHz 8M × 72 1 bank SDRAM module L-DIM-168-30 66 MHz 16M × 64 2 bank SDRAM module L-DIM-168-30 66 MHz 16M × 72 2 bank SDRAM module
HYS 64V16220GU-10 PC66-222-920 HYS 72V16220GU-10 PC66-222-920
Semiconductor Group
2
1998-08-01
HYS 64(72)V8200/16220GU-8/-10 SDRAM Modules
Pin Names A0 - A11 BA0, BA1 DQ0 - DQ63 CB0 - CB7 RAS CAS WE CKE0, CKE1 Address Inputs Bank Selects Data Input/Output Check Bits (× 72 organization only) Row Address Strobe Column Address Strobe Read/Write Input Clock Enable CLK0 - CLK3 DQMB0 DQMB7 CS0 - CS3 Clock Input Data Mask Chip Select Power (+ 3.3 Volt) Ground Clock for Presence Detect Serial Data Out for Presence Detect No Connection
VCC VSS
SCL SDA N.C.
Address Format Part Number 8M × 64 8M × 72 HYS 64V8200GU HYS 72V8200GU Rows 12 12 12 12 Columns Bank Select 9 9 9 9 2 2 2 2 Refresh 4k 4k 4k 4k Period 64 ms 64 ms 64 ms 64 ms Interval 15.6 µs 15.6 µs 15.6 µs 15.6 µs
16M × 64 HYS 64V16220GU 16M × 72 HYS 72V16220GU
Semiconductor Group
3
1998-08-01
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