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Part: HYM322160S
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> High Dynamic Range Amplifiers
Description: 2m X 32-bit Dynamic RAM Module
Company: Siemens (acquired by Infineon Technologies Corporation)
Datasheet: Download HYM322160S datasheet File size : 904 kB
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Datasheet text preview:
2M x 32-Bit Dynamic RAM Module
HYM 322160S/GS-60/-70
Advanced Information
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2 097 152 words by 32-Bit organization (alternative 4 194 304 words by 16-Bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 4840 mW active (-60 version) max. 4400 mW active (-70 version) CMOS 88 mW standby TTL 176 mW standby
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CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin double-sided Single in-Line Memory Module with 25.4 mm (1000 mil) height Utilizes sixteen 1M × 4 DRAMs in 300 mil SOJ packages 1024 refresh cycles / 16 ms Tin-Lead contact pads (S - version) Gold contact pads (GS - version)
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Ordering Information Type HYM 322160S-60 HYM 322160S-70 HYM 322160GS-60 HYM 322160GS-70 Ordering Code Q67100-Q2014 Q67100-Q2015 Q67100-Q2016 Q67100-Q2017 Package L-SIM-72-11 L-SIM-72-11 L-SIM-72-11 L-SIM-72-11 Description DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) DRAM Module (access time 60 ns) DRAM Module (access time 70 ns)
Semiconductor Group
551
09.94
HYM 322160S/GS-60/-70 2M x 32-Bit
The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32-Bit in a 72-pin single-in-line package comprising sixteen HYB514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC board. The HYM322160S/GS-60/-70 can also be used as a 4 194 304 words by 16-Bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, ..., DQ15 and DQ31, respectively. Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 322160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions Pin No. A0-A9 DQ0-DQ31 CAS0 - CAS3 RAS0 - RAS3 WE Function Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power (+ 5 V) Ground Presence Detect Pin No Connection
VCC VSS
PD N.C.
Presence Detect Pins -60 PD0 PD1 PD2 PD3 N.C. N.C. N.C. N.C. -70 N.C. N.C.
VSS
N.C.
Semiconductor Group
552
HYM 322160S/GS-60/-70 2M x 32-Bit
Pin Configuration (top view)
Semiconductor Group
553
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