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Part: HYB5118160BSJ-70
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> High Dynamic Range Amplifiers
Description: 1m X 16-bit Dynamic RAM 1k Refresh
Company: Siemens (acquired by Infineon Technologies Corporation)
Datasheet: Download HYB5118160BSJ-70 datasheet File size : 391 kB
Request For quote: Find where to buy HYB5118160BSJ-70
Datasheet text preview:
1M × 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode)
Advanced Information · 1 048 576 words by 16-bit organization · 0 to 70 °C operating temperature · Fast Page Mode operation · Performance: -50 -60 60 15 30 104 40 ns ns ns ns ns
HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60
tRAC tCAC tAA tRC tPC
RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time
50 13 25 84 35
· Power Dissipation, Refresh & Addressing: HYB5118160 -50 Power Supply Addressing Refresh Active TTL Standby CMOS Standby 715 11 5.5 -60 5 V ± 10 % 10/10 632 HYB3118160 -50 -60 3.3 V ± 0.3 V 10/10 468 7.2 3.6 414 mW mW mW
1024 cycles / 16 ms
· Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh · All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible · Plastic Package: P-SOJ-42-1 400 mil
Semiconductor Group
1
1998-10-01
HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 1M × 16 DRAM
The HYB 5(3)118160 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 1 048 576 words by 16-bits. The HYB 5(3)118)160 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)118160 to be packaged in a standard SOJ-42 plastic package with 400 mil width. This package provide high system bit densities and is compatible with commonly used automatic testing and insertion equipment. Ordering Information Type HYB 5118160BSJ-50 HYB 5118160BSJ-60 HYB 3118160BSJ-50 HYB 3118160BSJ-60 Pin Names HYB 5(3)118160 Row Address Inputs Column Address Inputs Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Output Enable Data Input/Output Read/Write Input Power Supply Ground (0 V) Not Connected A0 - A9 A0 - A9 RAS UCAS LCAS OE I/O1 - I/O16 WE Ordering Code Q67100-Q1072 Q67100-Q1073 on request on request Package P-SOJ-42-1 400 mil P-SOJ-42-1 400 mil P-SOJ-42-1 400 mil P-SOJ-42-1 400 mil Descriptions 5V 5V 50 ns FPM-DRAM 60 ns FPM-DRAM
3.3 V 50 ns FPM-DRAM 3.3 V 60 ns FPM-DRAM
VCC VSS
N.C.
Semiconductor Group
2
1998-10-01
HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 1M × 16 DRAM
P-SOJ-42 (400 mil)
V CC I/O1 I/O2 I/O3 I/O4 V CC I/O5 I/O6 I/O7 I/O8 N.C. N.C. WE RAS N.C. N.C. A0 A1 A2 A3 V CC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 V SS 41 I/O16 40 I/O15 39 I/O14 38 I/O13 37 V SS 36 I/O12 35 I/O11 34 I/O10 33 I/O9 32 N.C. 31 LCAS 30 UCAS 29 OE 28 A9 27 A8 26 A7 25 A6 24 A5 23 A4 22 V SS
SPP02812
Pin Configuration
Semiconductor Group
3
1998-10-01
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