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Part: HYB3165805BJ-40
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> High Dynamic Range Amplifiers
Description: 8m X 8-bit Dynamic RAM
Company: Siemens (acquired by Infineon Technologies Corporation)
Datasheet: Download HYB3165805BJ-40 datasheet File size : 1211 kB
Request For quote: Find where to buy HYB3165805BJ-40
Datasheet text preview:
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
HYB 3164805BJ/BT(L) -40/-50/-60 HYB 3165805BJ/BT(L) -40/-50/-60
Premininary Information
· · · ·
8 388 608 words by 4-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns
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Single + 3.3 V (± 0.3V) power supply Low power dissipation: max. 306 active mW ( HYB 3164805BJ/BT(L)-40) max. 252 active mW ( HYB 3164805BJ/BT(L)-50) max. 216 active mW ( HYB 3164805BJ/BT(L)-60) max. 486 active mW ( HYB 3165805BJ/BT(L)-40) max. 396 active mW ( HYB 3165805BJ/BT(L)-50) max. 324 active mW ( HYB 3165805BJ/BT(L)-60) 7.2 mW standby (LVTTL) 3.6 mW standby (LVMOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh
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Self refresh (L-version only) 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805BJ/BT) 4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805BJ/BT) · 128 msec refresh period for L-versions · Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)400BJ P-TSOPII-32-1 400 mil HYB 3164(5)400BT(L)
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Semiconductor Group
1
12.97
HYB3164(5)805BJ/BT(L)-40/-50/-60 8M x 8-DRAM
This HYB3164(5)805B is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in SIEMENS'most advanced 0,25 µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)805B operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400B to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)805BTL parts have a very low power ,, leep mode"supported by Self Refresh. s Ordering Information Type 8k-refresh versions: HYB 3164805BJ-40 HYB 3164805BJ-50 HYB 3164805BJ-60 HYB 3164805BT-40 HYB 3164805BT-50 HYB 3164805BT-60 HYB 3164805BTL-50 HYB 3164805BTL-60 4k-refresh versions: HYB 3165805BJ-40 HYB 3165805BJ-50 HYB 3165805BJ-60 HYB 3165805BT-40 HYB 3165805BT-50 HYB 3165805BT-60 HYB 3165805BTL-50 HYB 3165805BTL-60 P-SOJ-32-1 P-SOJ-32-1 P-SOJ-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 400 mil DRAM (access time 40 ns) 400 mil DRAM (access time 50 ns) 400 mil DRAM (access time 60 ns) 400 mil DRAM (access time 40 ns) 400 mil DRAM (access time 50 ns) 400 mil DRAM (access time 60 ns) 400 mil DRAM (access time 50 ns) 400 mil DRAM (access time 60 ns) P-SOJ-32-1 P-SOJ-32-1 P-SOJ-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 400 mil DRAM (access time 40 ns) 400 mil DRAM (access time 50 ns) 400 mil DRAM (access time 60 ns) 400 mil DRAM (access time 40 ns) 400 mil DRAM (access time 50 ns) 400 mil DRAM (access time 60 ns) 400 mil DRAM (access time 50 ns) 400 mil DRAM (access time 60 ns) Ordering Code Package Descriptions
Semiconductor Group
2
HYB3164(5)805BJ/BT(L)-40/-50/-60 8M x 8-DRAM
P-SOJ-32-1 (400 mil) P-TSOPII-32-1 (400 mil)
VCC I/O1 I/O2 I/O3 I/O4 N.C. VCC WE RAS . A0 A1 A2 A3 A4 A5 VCC
O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
VSS I/O8 I/O7 I/O6 I/O5 VSS CAS OE A12 / N.C. * A11 A10 A9 A8 A7 A6 VSS
* Pin 24 is A12 for HYB 3164805BJ/BT(L) and N.C. for HYB 3165805BJ/BT(L) Pin Configuration Pin Names A0-A12 A0-A11 RAS OE I/O1-I/O8 CAS WE Vcc Vss Address Inputs for 8k-refresh version HYB 3164805BJ/BT(L) Address Inputs for 4k-refresh version HYB 3165805BJ/BT(L) Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply ( + 3.3V) Ground
Semiconductor Group
3
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