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Part: HYB3164405J-60
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> High Dynamic Range Amplifiers
Description: 16m X 4-bit Dynamic RAM
Company: Siemens (acquired by Infineon Technologies Corporation)
Datasheet: Download HYB3164405J-60 datasheet File size : 1211 kB
Request For quote: Find where to buy HYB3164405J-60
Datasheet text preview:
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
HYB 3164405J/T(L) -50/-60 HYB 3165405J/T(L) -50/-60
Preliminary Information
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16 777 216 words by 4-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164405J/T(L)-50) max. 360 active mW ( HYB 3164405J/T(L)-60) max. 504 active mW ( HYB 3165405J/T(L)-50) max. 432 active mW ( HYB 3165405J/T(L)-60) 7.2 mW standby (TTL) 720 W standby (MOS) 14.4 mW Self Refresh (L-version only) Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh modes Hyper page mode (EDO) capability 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164405J/T(L)) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165405J/T(L)) Plastic Package: P-SOJ-34-1 500 mil HYB 3164(5)400J P-TSOPII-34-1 500 mil HYB 3164(5)400T
Semiconductor Group
89
HYB3164(5)405J/T(L)-50/-60 16M x 4-DRAM
This HYB3164(5)405 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405 operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400J/T to be packaged in a 500mil wide SOJ-34 or TSOP-34 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)405TL parts have a very low power ,,sleep mode" supported by Self Refresh. Ordering Information Type HYB 3164405J-50 HYB 3164405J-60 HYB 3164405T-50 HYB 3164405T-60 Ordering Code on request on request on request on request Package P-SOJ-34-1 P-SOJ-34-1 P-TSOPII-34-1 P-TSOPII-34-1 P-TSOPII-34-1 P-TSOPII-34-1 P-SOJ-34-1 P-SOJ-34-1 P-TSOPII-34-1 P-TSOPII-34-1 P-TSOPII-34-1 P-TSOPII-34-1 Descriptions 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns)
HYB 3164405TL-50 on request HYB 3164405TL-60 on request HYB 3165405J-50 HYB 3165405J-60 HYB 3165405T-50 HYB 3165405T-60 on request on request on request on request
HYB 3165405TL-50 on request HYB 3165405TL-60 on request Pin Names A0-A12 A0-A11 RAS OE I/O1-I/O4 CAS WRITE Vcc Vss
Address Inputs for HYB 3164405J/T(L) Address Inputs for HYB 3165405J/T(L) Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply ( + 3.3V) Ground
Semiconductor Group
90
HYB3164(5)405J/T(L)-50/-60 16M x 4-DRAM
P-SOJ-34-1 (500 mil) P-TSOPII-34-1 (500 mil)
Pin Configuration
Semiconductor Group
91
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