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Part: DB90080W
Category:
Description:
Company: SGS-Thomson (acquired by ST Microelectronics, Inc.)
Datasheet: Download DB90080W datasheet File size : 1857 kB
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Datasheet text preview:
DB-900-80W
RF POWER AMPLIFIER using 2 x PD57045 S The LdmoST FAMILY
PR ELIM INARY DATA
RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs · EXCELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 80 W min. with 13 dB gain over 869-894 MHz · 10:1 LOAD VSWR CAPABILITY · BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CD MA / 9ch FWD Pout = 14W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.98 MHz) : -60 dBc DESCRIPTION The DB-900-80W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. The DB-900-80W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating i n common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC)
Symbol V DD ID P DISS TCA SE Pamb S upply voltage D rain Current P ower dissipation a t Tcase = +85° C O perating C ase Temperature M ax. A mbient Temperature Parameter Value 32 9 135 -20 to + 85 +55 Unit V A W
o o
ORDER CODE DB-900-80W
MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm
C C 1/6
January, 21 2002
DB-900-80W
ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA)
Sy mbo l F REQ. G ain P1dB Fla tness Fla tness N D at P1dB IRTL Harmonic VSW R Sp urious I MD3 Frequency Range POUT = 80 W Over frequency range: 869 - 894 MH z Over frequency range and @ POUT = 80 W POUT from 0.1W to 80 W P1dB Input retu rn Loss POUT from 0.1W to 80 W POUT = 80 W Load Mismatch all phases @ P OUT = 80 W 10:1 VSW R all phases and POUT from 0.1 to 80W POUT = 80 W PEP 10:1 -7 6 -2 5 dB c dB c 45 50 -20 -40 -1 5 -3 0 Test Conditio ns Min. 869 13 80 14 90 +/- 0.5 1 Typ. Ma x. 894 Un it MH z dB W dB dB % dB dB c
TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 300mA)
F re qu ency Po ut CH PW R Pi n CH P W R Pou t CH PW R ACPR -750 KHz ACPR + 750 KHz ACPR -1.98 MHz ACPR + 1.98 MHz I total Nd
(MHz)
865 875 885 895 865 875 885 895 865 875 885 895
(W)
0.63 0.63 0.63 0.63 3.98 3.98 3.98 3.98 15.85 14.79 14.13 14.79
(dBm)
16.3 15.7 15.3 14.9 23.3 23.0 22.6 22.3 28.9 28.3 28.2 28.0
(dBm)
28.0 28.0 28.0 28.0 36.0 36.0 36.0 36.0 42.0 41.7 41.5 41.7
(dBc)
50.5 52.0 54.0 55.0 49.0 49.5 52.0 52.0 45 45 45 45
(dBc)
51.5 53.0 55.0 54.5 51.0 51.5 54.0 54.0 45 45 45 45
(dBc)
71 71 71 72 68.0 68.0 69.0 70.0 63 64 65 66
(dBc)
70 71 71 72 68.0 68.0 69.0 70.0 63 64 65 66
(A)
0.64 0.61 0.60 0.58 1.42 1.37 1.32 1.26 2.76 2.59 2.50 2.41
(%)
3.79 3.98 4.04 4.18 10.78 11.18 11.60 12.15 22.09 21.96 21.73 23.61
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D B-900-80W
TYPICAL PERFORMANCE Output Power vs. Input Power
Pout (W )
110 100 17 90 80 70
870 MHz 880 MHz
Power Gain vs. Input Power
Gp (d B)
18
16
890MHz
900 MHz
15
880 MHz
60 50
890 MHz 900 MHz
14 13
870 MHz 860MHz
40 30 20 10 0 0 1 2 3 4 5 6
Vdd = 26 V Idq = 2 x 200 mA 860 MHz
12 11 10 1 10 100 1000
Vdd = 26 V Idq = 2 x 200 mA
Pin (W )
Pout (W )
Power G ain vs. Frequency
Gp (dB)
18 17 16
Pout = 5 W
Efficiency vs. Frequency
Nd (%)
62 60 58 56 54
Pout = 80 W Pout = 90 W Pout = 100 W
15 14
Pout = 90 W
52 50 48 46
Vdd = 26 V Idq = 2 x 200 mA Pout = 80 W
13 12 11 10 850 860 870 880 890 900 910
44 42 40 850 860 870 880 890 900 910
Vdd = 26 V Idq = 2 x 200 mA
f (MHz)
f (MHz)
3/6
DB-900-80W
TEST FIXTURE COM PONENT LAYOUT
CV1
CV2
Ref. ETSA c07/2000 - Ed1
TEST CIRCU IT PHOTOMASTER
Ref. ETSA c07/2000 - Ed1
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D B-900-80W
TEST CIRCU IT CO MPONENT PART LIST
C OMPO NENT T 1, T2 C 1, C2, C23, C24 C 3, C4 C 5, C6, C17, C18 C 7, C8, C9, C10, C11, C12, C13, C14 C 15, C 16 C 19, C 20 C 21, C 22 C 26, C 27 C 25 C V1, CV 2 P 1, P 2 R 1,R7 R2 R 3, R4 R 5, R6 D 1, D2 S M1, S M2 B OARD S UBST RATE B ACK S IDE C ERAMI C CHIP C APACITORS DES CRIP TION PD57045S T RANSISTOR 47pF - 500V CERAMIC CHIP CAPACITOR 4.7pF - 500V CERAMIC CHIP CAPACITOR 100pF - 500V CERAMIC CHIP CAPACITOR 10pF - 500V CERAMIC CHIP CAPACITOR 100nF - 63V CERAMI C CHIP CAPACITOR 1µF / 35V ELE CTRO LYTIC C APACITOR 5.6pF - 500V CERAMIC CHIP CAPACITOR 6.8pF - 500V CERAMIC CHIP CAPACITOR 0.5pF - 500V CERAMIC CHIP CAPACITOR ADJUSTABLE C APACITOR 0.6 - 4.5pF / 500V 10K Oh ms M ULTITUR N PO TENT IOME TER 100 Ohms 1/ 4W 1206 S MD C HIP R ESIS TOR 50 Ohm s 30W - 4G Hz LOAD 4.7K Oh ms 1/ 4W 1206 SMD CHIP RESI STOR 10K Oh ms 1/ 4W 1206 S MD CHIP R ESIS TOR ZENER DIODE 5V - 500 mW SOD8 0 90° S MD H YBRI D C OUPLE R AN AREN Xinger 1304-3 METCL AD M X3-30-C1/10C T HK 0. 762 m m Cu 35µ TEFLON -GLA SS E r = 2.55 COPP ER FLANG E 2 mm THICKNE SS ATC100B or EQ UIVALENT
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