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Part: DB900100W
Category:
Description:
Company: SGS-Thomson (acquired by ST Microelectronics, Inc.)
Datasheet: Download DB900100W datasheet File size : 1857 kB
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Datasheet text preview:
DB-900-100W
RF POWER AMPLIFIER using 2 x PD57060 S The LdmoST FAMILY
PR ELIM INARY DATA
RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs · EXCELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 100 W min. with 13 dB gain over 869-894 MHz · 10:1 LOAD VSWR CAPABILITY · BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CDMA / 9ch FWD Pout = 20W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.98 MHz) : -60 dBc DESCRIPTION The DB-900-100W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. The DB-900-100W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding l oad mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC)
Symbol V DD ID P DISS TCA SE Pamb S upply voltage D rain Current P ower dissipation a t Tcase = +85° C O perating C ase Temperature M ax. A mbient Temperature Parameter Value 32 12 145 -20 to + 85 +55 Unit V A W
o o
O RDER COD E DB-900-100W
MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm
C C 1/6
January, 22 2002
DB-900-100W
ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA)
Sy mbo l F REQ. G ain P1dB Fla tness Fla tness N D at P1dB IRTL Harmonic VSW R Sp urious I MD3 Frequency Range POUT = 100 W Over frequency range: 869 - 894 MH z Over frequency range and @ POUT = 100 W POUT from 0.1W to 100 W P1dB Input retu rn Loss POUT from 0.1W to 100 W POUT = 100 W Load Mismatch all phases @ P OUT = 100 W 10:1 VSW R all phases and POUT from 0.1 to 100W POUT = 100 WP EP 10:1 -7 6 -2 5 dB c dB c 40 45 -20 -40 -1 5 -3 0 Test Conditio ns Min. 869 12.5 100 +/- 0.5 1 13 Typ. Ma x. 894 Un it MH z dB W dB dB % dB dB c
TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 350mA)
Frequency Pout CH PW R (W) 10 10 10 20 20 20 Pout CH PW R (dBm ) 40.0 40.0 40.0 43.0 43.0 43.0 ACPR -750 KHz (dBc) 53.4 54.2 53.2 45.0 45.1 45.2 ACPR +750 KHz (dBc) 50.8 51.7 51.7 45.0 45.4 45.7 ACPR -1.98 MHz (dBc) 67.0 68.6 69.0 64.0 64.7 66.8 ACPR +1.98 MHz ( dBc) 67.0 68.3 69.0 64.0 64.7 66.5 3 .5 22.0 2 .5 15.4 I total ( A) Nd
(MHz)
865 880 895 865 880 895
(%)
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D B-900-100W
TYPICAL PERFORMANCE Power G ain vs Output Power
Gp (d B)
18 17 16
895MHz
Power Gain vs Frequency
Gp ( dB)
18 17 16 15
15
880MHz
Pout = 15W Pout = 100W Pout = 110W
14 13 12 11 10 1
865MHz
14 13 12 11 10
Vdd = 26 V Idq = 2 x 200mA
Vdd = 26 V Idq = 2 x200mA
10
100
1000
860
865
870
875
880
885
890
895
900
Pout (W )
f ( MHz)
Efficiency vs Frequency
Nd (%)
60
55
50
45
Pout = 110W
40
Pout = 100W
35
Vdd = 26 V Idq = 2 x 200mA
30 860 865 870 875 880 885 890 895 900
f ( MHz)
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DB-900-100W
TEST FIXTURE COM PONENT LAYOUT
C V1
CV2
Ref. ETSA c07/2000 - Ed1
TEST CIRCU IT PHOTOMASTER
Ref. ETSA c07/2000 - Ed1
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D B-900-100W
TEST CIRCU IT CO MPONENT PART LIST
CO MPO NENT T 1, T2 C 1, C2, C23, C24 C 3, C4, C12, C14 C 5, C6, C17, C18 C 7, C8, C9, C10, C11, C13 C 15, C 16 C 19, C 20 C 26, C 27 C 21, C 22 C 25 C V1, CV 2 P 1, P 2 R 1,R7 R2 R 3, R4 R 5, R6 D 1, D2 S M1, S M2 B OARD S UBST RATE B ACK S IDE C ERAMI C CHIP C APACITORS DES CRIPT ION PD57060S TRANS ISTOR 47pF - 500V CE RAMI C CHIP CA PACITOR 6.8pF - 500V C ERAM IC CHIP CAPACITOR 100pF - 500V C ERAMIC C HIP C APACITOR 10pF - 500V CE RAMI C CHIP CA PACITOR 100nF - 63V CERAM IC CHIP CA PACITOR 1µF / 35V ELECT ROLYTIC CAPACITOR 3.3pF - 500V C ERAM IC CHIP CAPACITOR 4.7pF - 500V C ERAM IC CHIP CAPACITOR 0.5pF - 500V C ERAM IC CHIP CAPACITOR ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V 10K Ohms MULTITURN POT ENTIO METE R 100 Ohms 1/4W 1206 SMD CHIP RE SISTOR 50 Ohms 30W - 4GHz LOA D 4.7K Ohms 1/4W 1206 SM D CHIP RES ISTOR 10K Ohms 1/4W 1206 SM D CHI P RE SISTOR ZENE R DI ODE 5V - 500 m W SO D80 90° SMD HYB RID C OUP LER ANAREN Xinger 1304-3 MET CLAD MX3-30-C1/10C THK 0.762 mm Cu 35µ TEFL ON-GLA SS Er = 2.55 COP PER FLANG E 2 mm THICK NESS ATC100B or E QUIVALENT
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