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Part: PF08103A
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
Description: MOSFET Power Amplifier Module For E-gsm900 And Dcs1800 Dual Band Handy Phone
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download PF08103A datasheet File size : 34 kB
Request For quote: Find where to buy PF08103A
Datasheet text preview:
PF08103A
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-685B (Z) 3rd Edition Apr. 1999 Application
· Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz). · For 4.8 V nominal battery use
Features
· · · · · · 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 dBm input Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 48% Typ at 34.5 dBm for E-GSM 36% Typ at 31.5 dBm for DCS1800
PF08103A
Internal Circuit Block Diagram
Vdd1 Vdd2
Pout GSM Pin Pout DCS
Bias circuit
VCTL
VCTL
Vapc
Band Select and Power Control (H: 2 V Min, L: 0.3 V Max)
Operating Mode GSM Tx ON DCS Tx ON Tx OFF VCTL H L L VCTL L H L Vapc Control Control < 0.2 V
Current of Control Pin
Control Pin VCTL Equivalent Input Circuit Control Current 160 µA Max at 3 V
VCTL
80 µA Max at 3 V
Vapc
3 mA Max at 3 V
2
PF08103A
Internal Diagram and External Circuit
4 Pout GSM 8 Pin 5 Pout DCS Z1 Bias circuit 6 Vdd1 VCTL C3 C1 FB Pin Vdd1 VCTL FB VCTL 1 VCTL C5 2 Vapc C6 7 Vdd2 C7 C2 FB Vapc Vdd2 Pout DCS Pout GSM C4 3 Z2 Z3
Note: C1 = C2 = 4.7 µF TANTALUM ELECTROLYTE C3 = C4 = 0.01 µF CERAMIC CHIP C5 = C6 = C7 = 1000 pF CERAMIC CHIP FB = FERRITE BEAD BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = Z3 = 50 MICRO STRIP LINE
3
Others parts begin by pf
PF-1 PF-2
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