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Part: PF0210
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
Description: MOSFET Power Amplifier Module For ADC Mobile Phone
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download PF0210 datasheet File size : 219 kB
Request For quote: Find where to buy PF0210
Datasheet text preview:
PF0210
MOS FET Power Amplifier Module for ADC Mobile Phone
ADE-208-102E (Z) Preliminary 6th Edition July 1996 Features
· High efficiency: 34% Typ for CW 30% Typ for /4-DQPSK · Low input power: 0 dBm ave. Typ for /4-DQPSK · Simple bias circuit · High speed switching: 8 µs Typ
Pin Arrangement
· RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
PF0210
Internal Diagram and External Circuit
G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout
G GND
Z1
C1
FB1
C3
FB2
C2
Z2
Pin
VAPC
VDD
Pout
C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 (Microstrip line)
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 4 5.5 20 30 to +100 40 to +110 Unit V A V mW °C °C
2
PF0210
Electrical Characteristics (Tc = 25°C)
Analog Transmission
Item Frequency Drain cutoff current Total efficiency(1) 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Isolation Stability Symbol f I DS T(1) 2nd H.D. 3rd H.D. Min 824 -- 30 -- -- Typ -- -- 34 55 60 2 9 45 Max 849 500 -- 30 40 3 -- 40 Unit MHz µA % dBc dBc -- W dBm -- Pin = 3 dBm, VDD = 12.5 V, VAPC = 4 V Pin = 3dBm, VDD = 12.5 V, VAPC = 0.5 V Pin = 3 dBm, VDD = 12.5 V, Pout 6 W, Output VSWR = 20:1 All phases Test Condition -- VDD = 17 V, VAPC = 0 V Pin = 3 dBm, VDD = 12.5 V, Pout = 6 W (VAPC controlled),
VSWR (in) -- Pout -- -- 6 --
No parasitic oscillation
Digital Transmission
Item Frequency Total efficiency(2) Adjacent channel leakage power Input power Symbol f T(2) PADJ (30k) PADJ (60k) Pin Min 824 25 -- -- -- Typ -- 30 30 50 -- Max 849 -- 28 46 5 Unit MHz % dBc dBc Test Condition -- Pin controlled (/4-DQPSK, = 0.35, 48.6 kbps), BW =24.3 kHz with Root Nyquist
dBm ave. Filter, Pout = 5.5 W ave., VDD = 12.5 V VAPC = 3.9 V
Mechanical Characteristics
Item Torque for screw up the heatsink flange Warp size of the heatsink flange: S Conditions M3 Screw Bolts Spec 4 to 6 kg·cm S=0 +0.3/ 0 mm S
3
Others parts begin by pf
PF-1 PF-2
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