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Part: PF01412A
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
Description: MOSFET Power Amplifier Module For E-gsm Handy Phone
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download PF01412A datasheet File size : 219 kB
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Datasheet text preview:
PF01412A
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-477B (Z) 3rd Edition February 1997 Application
· For GSM class4 890 to 915 MHz · For 5.5V nominal DC/DC converter use
Features
· · · · High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ
Pin Arrangement
· RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
G
1
G
G
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 10 30 to +100 30 to +100 6 Unit V A V mW °C °C W
PF01412A
Electrical Characteristics (Tc = 25°C)
Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS T 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 890 0.5 -- 40 -- -- -- 3.8 Typ -- -- -- 45 45 45 1.5 4.5 Max 915 3.0 100 -- 35 35 3 -- Unit MHz V µA % dBc dBc -- W Pin = 1 mW, VDD = 5.5 V, VAPC = 3.0 V, RL = Rg = 50 , Tc = 25°C Pin = 1 mW, VDD = 5.0 V, VAPC = 3.0 V, RL = Rg = 50 , Tc = 80°C Pin = 1 mW, VDD = 5.5 V, VAPC = 0.5 V, RL = Rg = 50 , Tc = 25°C Pin = 1 mW, VDD = 5.5 V, Pout = 3.8 W, RL = Rg = 50 , Tc = 25°C Pin = 1 mW, VDD = 5 to 6 V, Pout 3.8 W, Vapc 3 V GSM pulse. Rg = 50 , t = 20 sec., Tc = 25°C, Output VSWR = 6 : 1 All phases VDD = 10 V, VAPC = 0 V Pin = 1 mW, VDD = 5.5 V, Pout = 3.8 W, Vapc = controlled RL = Rg = 50 , Tc = 25°C Test Condition
Output power (2)
Pout (2)
2.5
3.2
--
W
Isolation
--
--
50
40
dBm
Switching time
tr, tf
--
1
2
µs
Stability & Load VSWR tolerance
--
No parasitic oscillation & No degradation
--
2
PF01412A
Package Dimensions
Unit: mm 1.8 ± 0.2
4 8.0 ± 0.3 (7.8)
G
G
3
1
G
G
2 3 GG G2
(Upper side) 4 13.75 ± 0.3 (9.6) (3.7) (2.1) 1 G G 2
8.0 ± 0.3
1
G
(3.7)
4
G
G
3
(1.8)(1.3)(1.8)(1.6)(1.8)(1.3)(1.8) (2.225) (6.875) 13.75 ± 0.3 (Bottom side) (2.975) (6.875) Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm.
Hitachi Code JEDEC EIAJ Weight (reference value) RF-K
(2.1)
(0.6)
3
Others parts begin by pf
PF-1 PF-2
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