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Part: PF01411B
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
Description: MOSFET Power Amplifier Module For E-gsm Handy Phone
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download PF01411B datasheet File size : 219 kB
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Datasheet text preview:
PF01411B
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-434B (Z) 3rd Edition Nov. 1997 Application
· For E-GSM class4 880 to 915 MHz · For 3.5 V nominal battery use
Features
· · · · High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ
Pin Arrangement
3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
4
G
G
1
G
G
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10 30 to +100 30 to +100 5 Unit V A V mW °C °C W
PF01411B
Electrical Characteristics (Tc = 25°C)
Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS T 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 880 0.5 -- 40 -- -- -- 35.5 Typ -- -- -- 45 45 45 1.5 36.0 Max 915 2.2 100 -- 35 35 3 -- Unit MHz V µA % dBc dBc -- dBm Pin = 0dBm, VDD = 3.5V, VAPC = 2.2V, RL = Rg = 50, Tc = 25°C Pin = 0dBm, VDD = 3.0V, VAPC = 2.2V, RL = Rg = 50, Tc = 85°C Pin = 0dBm, VDD = 3.5V, VAPC = 0.5V, RL = Rg = 50, Tc = 25°C Pin = 0dBm, VDD = 3.5V, Pout = 0 to 35.5dBm RL = Rg = 50, Tc = 25°C Pin = 0dBm, VDD = 3 to 5.1V, Pout 35.5dBm, Vapc 2.2V GSM pulse. Rg = 50, Tc = 25°C, Output VSWR = 6 : 1 All phases Pin = 0dBm, VDD = 3 to 5.1V, Pout 35.5dBm, Vapc 2.2V GSM pulse. Rg = 50, t = 20sec., Tc = 25°C, Output VSWR = 10 : 1 All phases VDD = 8V, VAPC = 0V Pin = 0dBm, VDD = 3.5V, Pout = 35.5dBm, Vapc = control RL = Rg = 50, Tc = 25°C Test Condition
Output power (2)
Pout (2)
33.5
34.2
--
dBm
Isolation
--
--
40
36
dBm
Switching time
tr, tf
--
1
2
µs
Stability
--
No parasitic oscillation
--
Load VSWR tolerance
--
No degradation
--
2
PF01411B
Package Dimensions
Unit: mm
1.8 ± 0.2 4 G 3
8.0 ± 0.3
1
G (Upper side)
2
8.0 ± 0.3
(7.8)
4 13.75 ± 0.3
G
G3 G 2
1
G
(9.6) 1
(3.7)
G
G
2
(2.1)
Pin arrangement 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
(3.7)
4
G
G
3
(1.8) (1.3) (1.8) (1.6) (1.8) (1.3) (1.8) (2.225) (6.875) 13.75 ± 0.3 (Bottom side) (2.975) (6.875)
(2.1)
(0.6)
Remark: Coplanarity of bottom side of terminals are less than 0 +/- 0.1mm. Hitachi code RF-K EIAJ code JEDEC code
3
Others parts begin by pf
PF-1 PF-2
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