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Part: S3G
Category:
Discrete
-> Diodes & Rectifiers
-> Rectifier Diodes
-> Glass Passivated
Description: Pakage = SMC/DO-214AB ;; Max. Reverse Voltage VRM (V)= 400 ;; Max. Aver. Rect. Current io (A)= 3 ;; Ifsm (A)= 100
Company: Taiwan Semiconductor (TSC)
Datasheet: Download S3G datasheet File size : 27 kB
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Datasheet text preview:
S3A THRU S3M
3 . 0 A M P S . S u r f a c e M o u n t R e c t if ie r s
Voltage Range 50 to 1000 Volts C u rren t 3 .0 A m p e r e s
F e a tu r e s
For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-O High temperature soldering: o 260 C / 10 seconds at terminals
.129(3.27) .118(3.0)
S M C /D O - 2 1 4 A B
.245(6.22) .220(5.59)
.280(7.11) .260(6.60) .012(.31) .006(.15)
Mechanical Data
Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 Weight: 0.21 gram
.103(2.62) .079(2.00)
.060(1.52) .030(0.76) .320(8.13) .305(7.75)
.008(.20) .004(.10)
D im e n s io n s in in c h e s a n d ( m illim e t e r s )
M a x im u m R a tin g s a n d E le c tr ic a l C h a r a c te r is tic s
R a tin g a t 2 5 + a m b ie n t te m p e r a tu r e u n le s s o th e r w is e s p e c ifie d . S in g le p h a s e , h a lf w a v e , 6 0 H z , r e s is tiv e o r in d u c tiv e lo a d . F o r c a pa c i t i v e l o a d , d e r a t e c u r r e n t b y 2 0 % Symbol S3A S3B S3D S3G S3J S3K S3M Units Type Number Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 V VRRM Maximum RMS Voltage 35 70 140 280 420 560 700 V VRMS Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V VDC
M a x i m u m Av e r a g e F o r w a r d R e c t i f i e d C u r r e n t @ TL =105+ P e a k F o r w a r d S u r g e C u r r e n t , 8 .3 m s S i n g l e H a lf S in e - w a v e S u p e r im p o s e d o n R a te d L o a d ( J E D E C m e th o d ) Maximum Instantaneous Forward Voltage @ 3 .0 A M a x im u m D C R e v e rs e C u rre n t @ T A = 2 5 + at Rated DC Blocking Voltage @ TA=125+ Typical Thermal Resistance (Note 3) Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Operating Temperature Range Storage Temperature Range
I(AV) IF S M VF IR
R R JL JA
3 .0 100 1 .1 5 1 0 .0 250 13 47 2 .5 60 - 5 5 to + 1 5 0 - 5 5 to + 1 5 0
A A V uA uA + /W uS pF + +
Trr Cj
TJ TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Measured on P.C. Board with 0.3 x 0.3" (8x 8mm) Copper Pad Areas.
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R E V . 1 Oct.-2003
RATINGS AND CHARACTERISTIC CURVES (S3A THRU S3M)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 200
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
100
50
RESISTIVE OR INDUCTIVE LOAD P. C. BOARD MOUNTED ON 8.0mm2 PAD AREAS
60 70 80 90 100 110 120
o
8.3ms Single Half Sine Wave JEDEC Method Tj=Tj max
10 1 5 10 50 100
50
130
140
150
LEAD TEMPERATURE. ( C)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT. (A)
30
10
INSTANTANEOUS REVERSE CURRENT. (µ A)
Tj=125 0C
10
3.0 1.0
0.3
1.0 Tj=25 0C
0.1
0.03 0.01 0.6
Tj=25 0C PULSE WIDTH-300 S 2% DUTY CYCLE
0.7
.8
.9
1.0
1.2
1.4
1.6
.10 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE.(pF)
50
Tj=25 0C f=1.0MHz Vsig=50mVp-p
10
5 1 5 10 REVERSE VOLTAGE. (V) 50
100
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Others parts begin by s3
S3-1 S3-2 S3-3 S3-4
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