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Part: S2M
Category:
Discrete
-> Diodes & Rectifiers
-> Rectifier Diodes
-> Glass Passivated
Description: Pakage = SMB/DO-214AA ;; Max. Reverse Voltage VRM (V)= 1000 ;; Max. Aver. Rect. Current io (A)= 2 ;; Ifsm (A)= 50
Company: Taiwan Semiconductor (TSC)
Datasheet: Download S2M datasheet File size : 30 kB
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Datasheet text preview:
S2A THRU S2M
2 . 0 A M P S . S u r f a c e M o u n t R e c t if ie r s
Voltage Range 50 to 1000 Volts C urrent 2 .0 A m p e r e s
Features
For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-O High temperature soldering: 2 6 0 o C / 1 0 s e c o n d s a t te rm i n a l s
.082(2.08) .076(1.93)
S M B /D O - 2 1 4 A A
.147(3.73) .137(3.48)
.187(4.75) .167(4.25) .012(.31) .006(.15)
Mechanical Data
Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.093 gram
.103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .208(5.28) .200(5.08) .008(.20) .004(.10)
D im e n s io n s in in c h e s an d ( m illim e t e r s )
M a x i m u m R a t i n g s a n d E l e c tr i c a l C h a r a c t e r i s t i c s
R a ti n g a t 2 5 + a m b i e n t te m p e r a tu r e u n l e s s o th e r w i s e s p e c i fi e d . S i n g l e p h a s e , h a l f w a v e , 6 0 H z , r e s i s ti v e o r i n d u c ti v e l o a d . For capacitive load, derate current by 20% Sym bol S2A S2B S2D S2G Type Number Maximum Recurrent Peak Reverse Voltage 50 100 200 400 VRRM Maximum RMS Voltage 35 70 140 280 VRMS Maximum DC Blocking Voltage 50 100 200 400 VDC
Maximum Average Forward Rectified Current @ TL =100+ P e a k F o r w a r d S u r g e C u r r e n t , 8 .3 m s S i n g l e H a l f S i n e - w a v e S u p e r i m p o s e d o n R a te d L o a d ( J E D E C m e th o d ) Maximum Instantaneous Forward Voltage @ 2 .0 A M a x im u m D C R e v e r s e C u r r e n t @ T A = 2 5 + at Rated DC Blocking Voltage @ TA=125+ Typical Thermal resistance (Note 3) Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Operating Temperature Range Storage Temperature Range
S2J S2K S2M Units 600 800 1000 V 420 560 700 V 600 800 1000 V A A V uA uA + /W uS pF + +
I(AV) IF S M VF IR
R R JL JA
2 .0 50 1 .1 5 5 .0 125 16 53 2 .0 30 - 5 5 to + 1 5 0 - 5 5 to + 1 5 0
Trr Cj
TJ TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Measured on P.C. Board with 0.27 x 0.27" (7.0 x 7.0mm) Copper Pad Areas.
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R E V . 1 Oct.-2003
RATINGS AND CHARACTERISTIC CURVES (S2A THRU S2M)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
2.0
PEAK FORWARD SURGE CURRENT. (A)
50
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
8.3ms Single Half Sine Wave JEDEC Method
AVERAGE FORWARD CURRENT. (A)
40
1.5
30
20
1.0
SINGLE PHASE HALF SIZE WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 7.0mm2 PAD AREAS
10
0.5 50
60
70
80
90
100
110
o
120
130
140
150
0
1
10 NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE. ( C)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
10
FIG.4- TYPICAL REVERSE CHARACTERISTICS
10.0
INSTANTANEOUS FORWARD CURRENT. (A)
Tj=125 0C
INSTANTANEOUS REVERSE CURRENT. ( A)
1.0
1.0
Tj=100 0C
0.1
0.1
Tj=25 C PULSE WIDTH-300 S 2% DUTY CYCLE 0.01 0.4
0
Tj=25 0C
0.01 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V)
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100 60
JUNCTION CAPACITANCE.(pF)
40 20 10 6 4 2 1 .1
Tj=25 0C f=1.0MHz Vsig=50mVp-p
.2
.4
1
2
4
10
20
40
100
REVERSE VOLTAGE. (V)
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Others parts begin by s2
S2-1 S2-2 S2-3 S2-4 S2-5 S2-6 S2-7
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