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Part: EGP20A
Category:
Discrete
-> Diodes & Rectifiers
-> High Efficiency
-> Superdiodes Glass Passivated Junction
Description: Pakage = DO-15 ;; Max. Reverse Voltage VRM (V)= 50 ;; Max. Aver. Rect. Current io (A)= 2 ;; Ifsm (A)= 75
Company: Taiwan Semiconductor (TSC)
Datasheet: Download EGP20A datasheet File size : 64 kB
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Datasheet text preview:
EGP20A T H R U EGP20K
2.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range 50 to 800 Volts Current 2.0 Amperes
Features
Plastic material used carries Underwriters Laboratory Classification 94V-0 Glass passivated cavity-free junction Superfast recovery time for high efficiency Low forward voltage, high current capability Low leakage current High surge current capability High temperature metallurgically bonded construction High temperature soldering guaranteed: 300+/10 seconds, .375"(9.5mm) lead length at 5 lbs., (2.3kg) tension
DO-15
Mechanical Data
Cases: JEDEC DO-15 molded plastic over glass body Lead: Plated axial leads, solderable per MIL-STD750, Method 2026 Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.015 ounce, 0.4 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25+ambient temperature unless otherwise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol EGP EGP EGP Type Number
20A 20B 20D
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375"(9.5mm) Lead Length @ TA = 55+ Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 2.0A Maximum DC Reverse Current @ TA=25+ at Rated DC Blocking Voltage @ TA=125+ Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range
EGP 20F
EGP 20G
EGP 20J
EGP 20K
Units
V V V A A
VRRM VRMS VDC I(AV) IFSM VF IR Trr Cj
R JA R JL TJ ,TSTG
50 35 50
100 70 100
200 140 200
300 210 300 2.0 75.0
400 280 400
600 420 600
800 560 800
0.95
1.25 5.0 100 50.0 45.0 40 15 -65 to + 150
1.7
75.0
70.0
V uA uA nS pF +/W +
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1.0 MHz and Applied VR=4.0 Volts 3. Thermal Resistance from Junction to Ambient and from Junction to Lead at .375" (9.5mm) Lead Lengths, PC Board M ounted.
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R E V . 1 Oct.-2003
RATINGS AND CHARACTERISTIC CURVES (EGP20A THRU EGP20K)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
AVERAGE FORWARD CURRENT. (A)
3.0
FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTH
FIG.5- TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT. ( A)
2.0
10
Tj=150 0C
1.0
1
Tj=125 0C
0 0 25 50 75 100
o
125
150
175
0.1
Tj=75 0C
AMBIENT TEMPERATURE. ( C)
PEAK FORWARD SURGE CURRENT. (A)
90 75 60 45 30 15
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method
0.01 Tj=25 0C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
50
PULSE WIDTH-300 S 1% DUTY CYCLE
0 1
INSTANTANEOUS FORWARD CURRENT. (A)
10 NUMBER OF CYCLES AT 60Hz
100
10
Tj=150 0C
FIG.4- TYPICAL JUNCTION CAPACITANCE
140
1
Tj=25 0C
JUNCTION CAPACITANCE.(pF)
120 100 80 60 40 20 0 0.1
Tj=25 0C f=1.0MHz Vsig=50mVp-p
0.1
EGP20A-EGP20D EGP20F EGP20K
EGP20A-EGP20D EGP20F-EGP20K 1 10
REVERSE VOLTAGE. (V)
0.01 100 1,000
0.2
0.4
0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V)
1.6
1.8
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Others parts begin by eg
EG-1 EG-2
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