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Part: EL-6F11
Category:
Discrete
-> Diodes & Rectifiers
Description: Infrared Emitting Diodes ( GAAS )
Company: Kodenshi
Datasheet: Download EL-6F11 datasheet File size : 65 kB
Request For quote: Find where to buy EL-6F11
Datasheet text preview:
Infrared Emitting Diodes(GaAs)
K DNH OESI
EL-6F11
DIMENSIONS
The EL-6F11 is a high-power GaAs IRED mounted in a clear epoxy package. This IRED is both compact and easy to mount.
(Unit : mm)
FEATURES
¶UPlastic mold package with a large caliber lens ¶UHigh output power
APPLICATIONS
¶UOptical switches
MAXIMUM RATINGS
Item
Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°...) 5
Symbol
VR F I PD F IP Topr. Tstg. Tsol.
Rating
4 50 80 1 £ 5 £85 2° ´ £ 0 £85 4° ´ 260
Unit
V mA mW A °... °... °...
*1. pulse width £tw ßZ100period £ 10msec. sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Peak emission wavelength Spectral bandwidth *3 Radiant intensity Half angle
(Ta=2°...) 5
Symbol
VF R I ·Îp ··Î PO ··Ë
Conditions
F I =50mA VR=4V F I= 2 0 m A F I= 2 0 m A F I =50mA F I= 2 0 m A
Min.
Typ.
1.3 940 50 6.0 °æ 5 2
Max.
1.65 10
Unit.
V ·A Ï nm nm V deg.
2.5
*3. Measured by tester of KODENSHI CORP.
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Infrared Emitting Diodes(GaAs)
EL-6F11
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
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