|
|
Part: S949TRW
Category:
Description: MOSMIC® For Tv-tuner Prestage With 9 V Supply Voltage
Company: Vishay Intertechnology
Datasheet: Download S949TRW datasheet File size : 177 kB
Request For quote: Find where to buy S949TRW
Datasheet text preview:
S949T/S949TR/S949TRW
Vishay Semiconductors
MOSMIC® for TVTuner Prestage with 9 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and VHF- tuner with 9 V supply voltage.
AGC RF in C block C block G2 G1 S D RF out C block
94 9296
RFC VD D
Features
D D D D
Integrated gate protection diodes Low noise figure High gain Biasing network on chip
D Improved cross modulation at gain reduction D High AGC-range D SMD package
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
S949T Marking: 949 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S949TR Marking: 99R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
S949TRW Marking: W99 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85061 Rev. 3, 20-Jan-99
www.vishay.com 1 (9)
S949T/S949TR/S949TRW
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 ±VG1/G2SM 6 Ptot 200 T Ch 150 Tstg 55 to +150 Unit V mA mA V mW °C °C
Tamb 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Self-biased operating current Gate 2 - source cut-off voltage Test Conditions ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 9 V, VG1S = 0, VG2S = 4 V VDS = 9 V, VG1S = nc, VG2S = 4 V VDS = 9 V, VG1S = nc, ID = 100 Symbol Min ±V(BR)G1SS 7 ±V(BR)G2SS +IG1SS IG1SS ±IG2SS IDSS IDSP VG2S(OFF) 50 8 7 Typ Max Unit 10 V 10 50 100 20 500 16 V
mA mA
nA
mA
mA V
12 1.0
mA
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW collector resistor.
www.vishay.com 2 (9)
Document Number 85061 Rev. 3, 20-Jan-99
S949T/S949TR/S949TRW
Vishay Semiconductors Electrical AC Characteristics
VDS = 9 V, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol y21s Cissg1 Crss Coss Gps Gps DGps F F Min 25 Typ 30 2.3 25 1 28 20 1 1.3 Max Unit 35 mS 2.7 pF fF pF dB dB dB dB dB
GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 9 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz
17 45
Common Source SParameters
VDS = 9 V , VG2S = 4 V , Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 LOG ANG MAG dB deg 0.01 4.7 0.03 9.5 0.12 14.0 0.19 18.4 0.29 23.1 0.40 27.4 0.52 31.9 0.66 35.9 0.80 39.9 0.95 44.0 1.08 47.9 1.25 51.6 1.40 55.3 1.53 59.0 1.68 62.5 1.83 66.0 1.98 69.4 2.08 72.7 2.21 76.0 2.34 79.4 2.47 82.6 2.62 85.6 2.74 88.8 2.84 91.8 2.92 94.8 3.04 97.7 S21 LOG ANG MAG dB deg 9.57 174.6 9.48 168.3 9.38 161.8 9.26 155.8 9.11 149.3 8.96 143.7 8.73 138.0 8.57 132.0 8.33 126.9 8.14 121.5 7.93 116.3 7.70 110.9 7.48 106.5 7.25 101.6 7.10 96.9 6.90 92.1 6.71 87.6 6.52 82.6 6.36 78.0 6.17 74.0 6.02 69.7 5.80 65.0 5.69 60.5 5.56 56.3 5.52 51.9 5.34 47.1 S12 LOG ANG MAG dB deg 62.54 87.6 56.18 84.2 52.86 81.0 50.58 78.7 48.96 75.6 47.89 73.4 47.02 71.5 46.44 70.0 46.25 69.1 46.08 68.7 46.21 69.9 46.22 73.2 46.19 74.3 46.47 78.5 47.15 83.5 47.48 92.3 47.39 103.5 46.82 115.7 45.32 125.0 44.07 129.4 43.32 134.1 42.50 140.6 41.25 145.5 39.97 150.1 38.65 153.2 37.46 154.8 S22 LOG ANG MAG dB deg 0.17 2.3 0.23 3.6 0.24 5.4 0.26 7.1 0.28 9.1 0.33 10.6 0.36 12.3 0.40 14.0 0.44 15.6 0.48 17.2 0.51 18.8 0.55 20.4 0.59 21.7 0.61 23.4 0.62 24.9 0.65 26.4 0.67 28.0 0.70 29.8 0.71 31.4 0.68 33.0 0.70 34.6 0.74 36.0 0.72 37.8 0.69 39.7 0.60 41.9 0.67 43.3
f/MHz 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300
Document Number 85061 Rev. 3, 20-Jan-99
www.vishay.com 3 (9)
Others parts begin by s9
S9-1 S9-2
|
|
|
