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Part: S2M
Category:
Description:
Company: Vishay Intertechnology
Datasheet: Download S2M datasheet File size : 55 kB
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Datasheet text preview:
S2A thru S2M
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Glass Passivated Rectifier
Reverse Voltage 50 to 1000V Forward Current 1.5A DO-214AA (SMB)
Features
0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30)
Dimensions in inches and (millimeters)
0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152)
· Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · For surface mounted applications · Low profile package · Built-in strain relief, ideal for automated placement · Glass passivated chip junction · High temperature soldering: 250°C/10 seconds at terminals
0.096 (2.44) 0.084 (2.13)
Mounting Pad Layout
0.008 (0.203) Max.
0.106 MAX (2.69 MAX) 0.083 MIN (2.10 MIN) 0.050 MIN (1.27 MIN) 0.220 REF
Mechanical Data
Case: JEDEC DO-214AA molded plastic body over glass passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.003 oz., 0.093 g
0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)
Maximum Ratings & Thermal Characteristics
Parameter Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=100°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) TL=100°C Typical thermal resistance
(1)
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol VRRM VRMS VDC IF(AV) IFSM RJA RJL TJ, TSTG
S2A SA 50 35 50
S2B SB 100 70 100
S2D SD 200 140 200
S2G SG 400 280 400 1.5 50 53 16 -55 to +150
S2J SJ 600 420 600
S2K SK 800 560 800
S2M SM 1000 700 1000
Unit V V V A A °C/W °C
Operating and storage temperature range
Electrical Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol VF IR trr CJ TA=25°C TA=125°C
S2A
S2B
S2D
S2G 1.15 1.0 125 2.0 30
S2J
S2K
S2M
Unit V µA µs pF
Maximum instantaneous forward voltage at 1.5 A Maximum DC reverse current at Rated DC blocking voltage Typical reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Typical junction capacitance at 4.0V, 1MHz
Notes: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3 x 0.3" (8.0 x 8.0mm) copper pad areas
Document Number 88712 11-Feb-02
www.vishay.com 1
S2A thru S2M
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 -- Forward Current Derating Curve
50 Resistive or Inductive Load
Fig. 2 -- Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
TL = 100°C 8.3ms Single Half Sine-Wave (JEDEC Method)
Average Forward Current (A)
1.5
40
1.0
30
20
0.5
0 50
60 HZ Resistive or Inductive Load P.C.B. Mounted 0.27 x 0.27" (7.0 x 7.0 mm) Copper Pad Areas 60 70 80 90 100 110 120 130 140 150
10
0 1 10 100
Lead Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 -- Typical Instantaneous Forward Characteristics
10 10
Fig. 4 -- Typical Reverse Characteristics
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
Pulse Width = 300µs 1% Duty Cycle 1 TJ = 25°C
TJ = 125°C 1 TJ = 100°C
0.1
0.1
TJ = 25°C 0.01 0 20 40 60 80 100
0.01 0.4
0.6
0.8
1
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 -- Typical Junction Capacitance
100 TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p
Junction Capacitance (pF)
10
1 0.1 1 10 100
Reverse Voltage (V)
www.vishay.com 2
Document Number 88712 11-Feb-02
Others parts begin by s2
S2-1 S2-2 S2-3 S2-4 S2-5 S2-6 S2-7
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