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Part: DG641
Category:
Description: Low On-resistance Wideband/video Switches
Company: Vishay Intertechnology
Datasheet: Download DG641 datasheet File size : 58 kB
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Datasheet text preview:
DG641/642/643
Vishay Siliconix
Low On-Resistance Wideband/Video Switches
FEATURES
D D D D D D D Wide Bandwidth: 500 MHz Low Crosstalk at 5 MHz: 85 dB Low rDS(on): 5 W , DG642 TTL Logic Compatible Fast Switching: tON 50 ns Single Supply Compatibility High Current: 100 mA, DG642
BENEFITS
D D D D D D High Precision Improved Frequency Response Low Insertion Loss Improved System Performance Reduced Board Space Low Power Consumption
APPLICATIONS
D D D D D D D D RF and Video Switching RGB Switching Video Routing Cellular Communications ATE Radar/FLIR Systems Satellite Receivers Programmable Filters
DESCRIPTION
The DG641/642/643 are high performance monolithic video switches designed for switching wide bandwidth analog and digital signals. DG641 is a quad SPST, DG642 is a single SPDT, and DG643 is a dual SPDT function. These devices have exceptionally low on-resistances (5 W typ--DG642), low capacitance and high current handling capability. To achieve TTL compatibility, low channel capacitances and fast switching times, the DG641/642/643 are built on the Vishay Siliconix proprietary D/CMOS process. Each switch conducts equally well in both directions when on, and blocks up to 14 Vp-p when off. An epitaxial layer prevents latchup.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line and SOIC IN1 D1 S1 V GND S4 D4 IN4 1 2 3 4 DG641 5 6 7 8 Top View 16 IN2 15 D2 14 S2 13 V+ 12 GND 11 S3 10 D3 9 IN3
S1 D1 V GND 1 2 3 4 Dual-In-Line and SOIC IN1 D1 GND 8 7 6 IN S1 V+ V D2 S4 S2 GND D4 1 2 3 4 5 6 7 8 Dual-In-Line and SOIC IN2 D2 GND S2 V+ S3 GND D3
16 15 14 13 12 11 10
DG642
Top View
5
DG643
Top View
9
TRUTH TABLE
Logic
0 1
DG641
Switch
OFF ON
TRUTH TABLE
Logic
0 1
DG642
SW2
ON OFF
TRUTH TABLE
Logic
0 1
DG643
SW3, SW4
ON OFF
SW1
OFF ON Logic "0" v 0.8 V Logic "1" w 2.4 V
SW1, SW2
OFF ON Logic "0" v 0.8 V Logic "1" w 2.4 V
Logic "0" v 0.8 V Logic "1" w 2.4 V Document Number: 70058 S-52433--Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-1
DG641/642/643
Vishay Siliconix
ORDERING INFORMATION
Temp Range DG641
16-Pin Plastic DIP 40 to 85_C 16-Pin Narrow SOIC DG641DJ DG641DY
Package
Part Number
DG642
8-Pin Plastic DIP 40 to 85_C 8-Pin Narrow SOIC DG642DJ DG642DY
DG643
40 to 85_C 85 C 16-Pin Plastic DIP 16-Pin Narrow SOIC DG643DJ DG643DY
ABSOLUTE MAXIMUM RATINGS
V+ to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V V to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V to +0.3 V Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V) 0.3 V to (V+) +0.3 V or 20 mA, whichever occurs first VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V) 0.3 V to (V) +14 V or 20 mA, whichever occurs first Continuous Current (Any Terminal Except S or D) . . . . . . . . . . . . . . . . 20 mA Continuous Current S or D: DG641/643 . . . . . . . . . . . . . . . . . . . . . . . 75 mA DG642 . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Current, S or D (Pulsed 1 ms, 10% duty cycle max) DG641/643 . . . . . . . . . . . . . . . . . . . . . . 200 mA DG642 . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA Notes: a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7.6 mW/_C above 75_C d. Derate 6 mW/_C above 75_C e. Derate 80 mW/_C above 75_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 125_C Power Dissipation (Package)b 8-Pin Plastic DIP and Narrow SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW 16-Pin Plastic DIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOICe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ 5V Reg S
GND
IN
D
V
FIGURE 1.
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Document Number: 70058 S-52433--Rev. E, 06-Sep-99
DG641/642/643
Vishay Siliconix
SPECIFICATIONS FOR DG641 AND DG643
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangedd VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = 0 V, VD = 10 V VS = 10 V, VD = 0V VS = VD = 0 V V = 5 V, V+ = 12 V V = GND, V+ = 12 V Full Full Room Full Room Room Full Room Full Room Full 10 100 10 100 10 100 5 0 8 1 0.02 0.02 0.1 8 8 15 20 2 10 100 10 100 10 100 nA W V
Limits
40 to 85_C
Symbol
V+ = 15 V, V = 3 V VINH = 2.4 V, VINL = 0.8 Ve
Tempa
Minb
Typc
Maxb
Unit
Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Channel On Leakage Current
IS = 10 mA, VD = 0 V ,
Digital Control
Input Voltage High Input Voltage Low Input Current VINH VINL IIN VIN = GND or V+ Full Full Room Full 1 20 0.05 2.4 0.8 1 20 mA V
Dynamic Characteristics
On State Input Capacitanced Off State Input Capacitanced Off State Output Capacitanced Bandwidth Turn On Time Turn Off Time Charge Injection Off Isolation All Hostile Crosstalk CS(on) CS(off) CD(off) BW tON RL = 1 kW, CL = 35 pF, See Figure 2 tOFF Q OIRR XTALK(AH) CL = 1000 pF, VD = 0 V, See Figure 3 RIN = 75 W, RL = 75 W, f = 5 MHz See Figure 4 RIN = 10 W, RL = 75 W, f = 5 MHz See Figure 5 VS = VD = 0 V VS = 0 V VD = 0 V RL = 50 W, See Figure 6 Room Room Room Room Room Full Room Full Room Room Room 10 4 4 500 50 28 19 60 dB 87 70 140 ns 50 85 pC 20 12 12 MHz pF
Power Supplies
Positive Supply Current Negative Supply Current I+ VIN = 0 V or VIN = 5 V I Room Full Room Full 6 9 3.5 3 6 9
mA
Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function.
Document Number: 70058 S-52433--Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-3
DG641/642/643
Vishay Siliconix
SPECIFICATIONS FOR DG642
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = 0 V, VD = 10 V VS = 10 V, VD = 0V VS = VD = 0 V V = 5 V, V+ = 12 V V = GND, V+ = 12 V Full Full Room Full Room Room Full Room Full Room Full 10 200 10 200 10 200 5 0 5 0.5 0.04 0.04 0.2 8 8 8 9 1 10 200 10 200 10 200 nA W V
Limits
40 to 85_C
Symbol
V+ = 15 V, V = 3 V VINH = 2.4 V, VINL = 0.8 Ve
Tempa
Minb
Typc
Maxb
Unit
Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Channel On Leakage Current
IS = 10 mA, VD = 0 V ,
Digital Control
Input Voltage High Input Voltage Low Input Current VINH VINL IIN VIN = GND or V+ Full Full Room Full 1 20 0.05 2.4 0.8 1 20 mA V
Dynamic Characteristics
On State Input Capacitanced Off State Input Capacitanced CS(on) CS(off) CD(off) BW tON RL = 1 kW, CL = 35 pF, See Figure 2 Turn Off Time Charge Injection Off Isolation All Hostile Crosstalk XTALK(AH) tOFF Q CL = 1000 pF, VD = 0 V, See Figure 3 RIN = 75 W, RL = 75 W, f = 5 MHz See Figure 4 RIN = 10 W, RL = 75 W, f = 5 MHz See Figure 5 VS = VD = 0 V VS = 0 V VD = 0 V RL = 50 W, See Figure 6 Room Room Room Room Room Full Room Full Room Room Room 19 8 8 500 60 40 40 63 dB 85 100 160 ns 60 100 pC 40 20 20 MHz pF
Off State Output Capacitanced Bandwidth Turn On Time
Power Supplies
Positive Supply Current Negative Supply Current I+ VIN = 0 V or VIN = 5 V I Room Full Room Full 6 9 3.5 3 6 9
mA
Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function.
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Document Number: 70058 S-52433--Rev. E, 06-Sep-99
DG641/642/643
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Current vs. Temperature
6 5 4 3 Current (mA) 2 1 0 1 2 3 4 5 55 35 15 5 25 45 65 85 105 125 0.1 pA 55 25 0 25 50 75 100 125 I 1 pA IGND I D(off), I S(off) 1 nA 10 nA I+ 100 nA
Leakages vs. Temperature
100 pA
10 pA
Temperature (_C)
Temperature (_C)
DG641/643 rDS(on) vs. Drain Voltage
40 V+ = 15 V V = 3 V 30 125_C 20 25_C r DS(on) Drain-Source On-Resistance ( W ) r DS(on) Drain-Source On-Resistance ( W ) 20
DG642 rDS(on) vs. Drain Voltage
V+ = 15 V V = 3 V 15 125_C 10 25_C
55_C 10
5
55_C
0 3 1 1 3 5 7 9 11 VD Drain Voltage (V)
0 3 1 1 3 5 7 9 11 VD Drain Voltage (V)
On Capacitance
22 20 18 OIRR (dB) 16 14 DG642 12 10 8 6 0 2 4 6 (VD) (V) 8 10 12 DG641/643 30 20 10 1 110 100 90 80 C (pF) 70 60 50 40
Off Isolation
DG641/643
DG642
10 f Frequency (MHz)
100
Document Number: 70058 S-52433--Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-5
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