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Part: DG613
Category:
Description: Hi-Speed, Low-glitch D/dmos Analog Switches
Company: Vishay Intertechnology
Datasheet: Download DG613 datasheet File size : 58 kB
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DG611/612/613
Vishay Siliconix
High-Speed, Low-Glitch D/CMOS Analog Switches
FEATURES
D D D D D D D Fast Switching-- tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5-V CMOS Logic Compatible Low rDS(on): 18 W Low Quiescent Power : 1.2 nW Single Supply Operation
BENEFITS
D D D D D D Improved Data Throughput Minimal Switching Transients Improved System Performance Easily Interfaced Low Insertion Loss Minimal Power Consumption
APPLICATIONS
D D D D D D D D Fast Sample-and-Holds Synchronous Demodulators Pixel-Rate Video Switching Disk/Tape Drives DAC Deglitching Switched Capacitor Filters GaAs FET Drivers Satellite Receivers
DESCRIPTION
The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup. The DG611 and DG612 differ only in that they respond to opposite logic levels. The versatile DG613 has two normally open and two normally closed switches. It can be given various configurations, including four SPST, two SPDT, one DPDT. For additional information see Applications Note AN207 (FaxBack number 70605).
Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611/612/613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG611
IN1 D1 S1 V GND S4 D4 IN4 1 2 3 4 5 6 7 8 Dual-In-Line and SOIC Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3 9 10 Key S1 V NC GND S4 4 5 6 7 8 3 2
DG611
D1 IN1 NC IN2 D2 1 20 19 18 17 LCC Top View 16 15 14 11 12 13 S2 V+ NC VL S3
Four SPST Switches per Package
TRUTH TABLE
Logic
0 1
DG611
ON OFF Logic "0" v 1 V Logic "1" w 4 V
DG612
OFF ON
D4 IN4 NC IN3 D3
Document Number: 70057 S-00399--Rev. G, 13-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-1
DG611/612/613
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG613
IN1 D1 S1 V GND S4 D4 IN4 1 2 3 4 5 6 7 8 Dual-In-Line and SOIC Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ NC VL S3 D3 IN3 GND S4 Key S1 V 4 5 6 7 8 9 10 11 12 13 LCC Top View 15 14 3 2
DG613
D1 IN1 NC 1 IN2 D2 19 18 17 16 S2 V+ 20
Four SPST Switches per Package
TRUTH TABLE
Logic SW1, SW4
OFF ON Logic "0" v 1 V Logic "1" w 4 V
NC 0 VL S3 1
SW2, SW3
ON OFF
D4 IN4 NC IN3 D3
ORDERING INFORMATION
Temp Range DG611/612
16-Pin Plastic DIP 40 to 85 C 85_C 16-Pin Narrow SOIC DG611DJ DG612DJ DG611DY DG612DY DG611AK/883, 5962-9325501MEA DG612AK/883, 5962-9325502MEA DG611AZ/883, 5962-9325501M2A DG612AZ/883, 5962-9325502M2A
Package
Part Number
16-Pin CerDIP 55 to 125 C 125_C LCC-20
DG613
40 to 85_C 16-Pin Plastic DIP 16-Pin Narrow SOIC 16-Pin CerDIP LCC-20 DG613DJ DG613DY DG613AK/883, 5962-9325503MEA DG613AZ/883, 5962-9325503M2A
55 to 125_C
ABSOLUTE MAXIMUM RATINGS
V+ to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V V to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V to 0.3 V VL to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to (V+) + 1 V or 20 mA, whichever occurs first VINa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V) 1 V to (V+) + 1 V or 20 mA, whichever occurs first VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V) 0.3 V to (V) + 16 V or 20 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "30 mA Current, S or D (Pulsed at 1 ms, 10% Duty Cycle) . . . . . . . . . . . . . "100 mA Storage Temperature: CerDIP . . . . . . . . . . . . . . . . . . . . . 65 to 150_C Plastic . . . . . . . . . . . . . . . . . . . . . . 65 to 125_C 470 mW 600 mW 900 mW 900 mW
Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-Pin LCCe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes: a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C
RECOMMENDED OPERATING RANGE
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V to 21 V V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 V to 0 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 V to V+ www.vishay.com S FaxBack 408-970-5600 VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to VL VANALOG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V to (V+) 5 V
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Document Number: 70057 S-00399--Rev. G, 13-Sep-99
DG611/612/613
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Switch On-Resistance Resistance Match Bet Ch. Source Off Leakage Drain Off Leakage Current Switch On Leakage Current VANALOG rDS(on) IS = 1 mA, VD = 0 V DrDS(on) IS(off) ID(off) ID(on) VS = 0 V, VD = 10 V VS = 10 V, VD = 0 V VS = VD = 0 V V = 5 V, V+ = 12 V Full Room Full Room Room Hot Room Hot Room Hot 18 5 7 45 60 5 7 45 60 V
A Suffix
55 to 125_C
D Suffix
40 to 85_C
Symbol
V+ = 15 V, V = 3 V 15 V V 3 VL = 5 V, VIN = 4 V, 1 Vf
Tempb
Typc
Mind Maxd Mind Maxd Unit
W
2 "0.001 "0.001 "0.001 0.25 20 0.25 20 0.4 40 0.25 20 0.25 20 0.4 40 0.25 20 0.25 20 0.4 40 0.25 20 0.25 20 0.4 40 nA
Digital Control
Input Voltage High Input Voltage Low Input Current Input Capacitance VIH VIL IIN CIN Full Full Room Hot Room 0.005 5 1 20 4 1 1 20 1 20 4 1 1 20 V mA pF
Dynamic Characteristics
Off State Input Capacitance Off State Output Capacitance On State Input Capacitance Bandwidth Turn-On Timee Turn-Off Timee Turn-On Time Turn-Off Time Charge Injectione Ch. Injection Changee, g Off Isolatione Crosstalke CS(off) CD(off) CS(on) BW tON tOFF tON tOFF Q DQ OIRR XTALK VS = 0 V VD = 0 V VS = VD = 0 V RL = 50 W RL = 300 W, CL = 3 pF, VS = "2 V , p, See T t Ci it Figure 2 Test Circuit, Fi RL = 300 W, CL = 75 pF VS = "2 V See Test Circuit, Figure 2 CL = 1 nF, VS= 0 V CL = 1 nF, bVS b Room Room Room Room Room Room Room Full Room Full Room Room Room Room 3 2 10 500 12 8 19 16 4 3 74 87 4 4 pC 25 20 35 50 25 35 25 20 35 50 25 35 ns MHz pF
v3V
RIN = 50 W, RL = 50 W f = 5 MHz RIN = 10 W, RL = 50 W, f = 5 MHz
dB
Power Supplies
Positive Supply Curent Negative Supply Current Logic Supply Current Ground Current I+ I VIN = 0 V or 5 V IL IGND Room Full Room Full Room Full Room Full 0.005 0.005 0.005 0.005 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5
mA
Document Number: 70057 S-00399--Rev. G, 13-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-3
DG611/612/613
Vishay Siliconix
SPECIFICATIONSa FOR UNIPOLAR SUPPLIES
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Switch On-Resistance VANALOG rDS(on) IS = 1 mA, VD = 1 V Full Room 25 0 7 60 0 7 60 V W
A Suffix
55 to 125_C
D Suffix
40 to 85_C
Symbol
V+ = 15 V, V = 3 V VL = 5 V, VIN = 4 V, 1 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Dynamic Characteristics
Turn-On Timee Turn-Off Timee tON tOFF RL = 300 W, CL = 3 pF, VS = 2 V , p, See T t Ci it Figure 2 Test Circuit, Fi Room Room 15 10 30 25 30 ns 25
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. DQ = bQ at VS = 3 V Q at VS = 3 Vb.
www.vishay.com S FaxBack 408-970-5600
4-4
Document Number: 70057 S-00399--Rev. G, 13-Sep-99
DG611/612/613
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
400 r DS(on) Drain-Source On-Resistance ( W ) 350 300 250 200 150 100 50 0 5 4 2 0 2 4 6 VD Drain Voltage (V) 8 10 12 V+ = 5 V V = 5 V V+ = 15 V V = 3 V V+ = 12 V V = 5 V r DS(on) Drain-Source On-Resistance ( W ) IS = 1 mA 400 350 300 250 200 150 100 50 0 4 2 0 2 4 6 8 VD Drain Voltage (V) 10 12 125_C 55_C V+ = 15 V V = 3 V IS = 1 mA
rDS(on) vs. VD and Temperature
25_C
Leakage Current vs. Analog Voltage
3 V+ = 15 V V = 3 V I S(off), I D(off) Leakage (A) 10 nA 1 nA
Leakage Currents vs. Temperature
2 I S, I D Leakage Current (pA)
1 IS(off), ID(off) 0
100 pA ID(on) 10 pA IS(off), ID(off)
1 ID(on)
2
1 pA
3 4 2 0 2 4 6 8 VD or VS Drain or Source Voltage (V) 10
0.1 pA 55 25 0 25 50 Temperature (_C) 75 100 125
6
Input Switching Threshold vs. VL
24 V+ = 15 V V = 3 V 22 20 18
Switching Times vs. Temperature
5 V TH Logic Input Voltage (V)
tON
4 Time (ns)
16 14 12 10 8 6 V+ = 15 V V = 3 V RL = 300 W CL = 10 pF tOFF
3
2
1
4 2
0 0 5 10 15 VL Logic Supply Voltage (V)
0 55 35 15 5 25 45 65 85 105 125 Temperature (_C)
Document Number: 70057 S-00399--Rev. G, 13-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-5
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