|
|
Part: DG412LAZ/883
Category:
Description: Precision Monolithic Quad SPST Low Voltage CMOS Analog Switches
Company: Vishay Intertechnology
Datasheet: Download DG412LAZ/883 datasheet File size : 304 kB
Request For quote: Find where to buy DG412LAZ/883
Datasheet text preview:
DG411L/412L/413L
Vishay Siliconix
Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches
FEATURES
D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance--r DS(on): 17 W D Fast Switching--tON: 19 ns --tOFF: 12 ns D TTL, CMOS Compatible D Low Leakage: 0.25 nA D 2000-V ESD Protection
BENEFITS
D D D D Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing
APPLICATIONS
D D D D D D D Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals SDSL, DSLAM Audio and Video Signal Routing
DESCRIPTION
The DG411L/412L/413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411/412/413 with improved performance Combining high speed (tON: 19 ns), flat rDS(on) over the analog signal range (5 W), minimal insertion lose (- 3 dB at 280 MHz), and excellent crosstalk and off-isolation performance ( - 50 dB at 50 MHz), the DG411L/412L/413L are ideally suited for audio and video signal switching. The DG411L and DG412L respond to opposite control logic as shown in the Truth Table. The DG413L has two normally open and two normally closed switches.
Using BiCMOS wafer fabrication technology allows the DG411L/412L/413L to operate on single and dual supplies. Single supply voltage ranges from 3 to 12 V while dual supply operation is recommended with "3 to "6 V.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411L/412L
Dual-In-Line, TSSOP and SOIC IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3
TRUTH TABLE
Logic
0 1
DG411L
ON OFF Logic "0" v 0.8 V 08 2.4 Logic "1" w 2 4 V
DG412L
OFF ON
Document Number: 71397 S-03251--Rev. D, 17-Mar-03
www.vishay.com
1
DG411L/412L/413L
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413L
Dual-In-Line, TSSOP and SOIC IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3
TRUTH TABLE
Logic
0 1
SW1, SW4
OFF ON
SW2, SW3
ON OFF
Logic "0" v 0.8 V 08 2.4 Logic "1" w 2 4 V
ORDERING INFORMATION
Temp Range DG411L/412L
16-Pin Narrow SOIC - 40 to 85_C 16-Pin TSSOP 16-Pin CerDIP - 55 to 125_C LCC-20 DG411LDY DG412LDY DG411LDQ DG412LDQ DG411LAK, DG411LAK/883 DG412LAK, DG412LAK/883 DG411LAZ/883 DG412LAZ/883
Package
Part Number
DG413L
- 40 to 85_C - 55 to 125_C 16-Pin Narrow SOIC 16-Pin TSSOP 16-Pin CerDIP LCC-20 DG413LDY DG413LDQ DG413LAK, DG413LAK/883 DG413LAZ/883
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 TO 13 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V
I a, N
Power Dissipation (Package)b 16-Pin TSSOPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C Document Number: 71397 S-03251--Rev. D, 17-Mar-03
VS, VD . . . . . . . . . . - 0.3 to (V+ +0.3 V) or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA Storage Temperature (DQ, DY Suffix) . . . . . . . . . . . . . . - 65 to 125_C (AK Suffix) . . . . . . . . . . . . . . . . . . . - 65 to 150_C
www.vishay.com
2
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 12 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current Channel On Leakage Current VANALOG rDS(on) IS(off) ID(off) ID(on) VD = 1/11 V VS = 11/1 V V, V+ = 10.8 V, V - = 0 V IS = 10 mA, VD = 2/9 V Full Room Full Room Full Room Full Room Full 20 -1 - 15 -1 - 15 -1 - 15 0 12 30 45 1 15 1 15 1 15 -1 - 10 -1 - 10 -1 - 10 0 12 30 40 1 10 1 10 1 10 nA V W
A Suffix Limits
- 55 to 125_C
D Suffix Limits
- 40 to 85_C
Symbol
V+ = 12 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
VS = VD = 11/1 V
Digital Control
Input Current, VIN Low Input Current, VIN High IIL IIH VIN Under Test = 0.8 V VIN Under Test = 2.4 V Full Full 0.01 - 1.5 - 1.5 1.5 1.5 -1 -1 1 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = 5 V See Figure 2 DG413L Only, VS = 5 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 10 nF RL = 50 W , CL = 5 pF pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room Room 20 12 6 5 71 95 5 6 15 pF dB pC 50 70 30 48 50 60 30 40 ns
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IVIN = 0 or 5 V IL IGND Room Full Room Full Room Full Room Full 0.02 - 0.002 0.002 - 0.002 -1 - 7.5 -1 - 7.5 1 7.5 -1 -5 1 7.5 -1 -5 1 5 1 5 mA
SPECIFICATIONSa (DUAL SUPPLY "5 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg Channel On Leakage Currentg Document Number: 71397 S-03251--Rev. D, 17-Mar-03 VANALOG rDS(on) IS(off) ID(off) ID(on) V+ = 5 V, V - = -5 V IS = 10 mA, VD = "3.5 V V+ = 5.5 V, V - = -5.5 V VD = "4.5 V, VS = #4.5 V V+ = 5.5 V, V - = -5.5 V VS = VD = "4.5 V Full Room Full Room Full Room Full Room Full 20 -1 - 15 -1 - 15 -1 - 15 -5 5 33 45 1 15 1 15 1 15 -1 - 10 -1 - 10 -1 - 10 -5 5 33 40 1 10 1 10 1 10 www.vishay.com nA V W
A Suffix Limits
- 55 to 150_C
D Suffix Limits
- 40 to 85_C
Symbol
V+ = 5 V, V - = -5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
3
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (DUAL SUPPLY "5 V)
Test Conditions Unless Specified Parameter Digital Control
Input Current, VIN Lowe Input Current, VIN Highe IIL IIH VIN Under Test = 0.8 V VIN Under Test = 2.4 V Full Full 0.05 0.05 - 1.5 - 1.5 1.5 1.5 -1 -1 1 1 mA
A Suffix Limits
- 55 to 150_C
D Suffix Limits
- 40 to 85_C
Symbol
V+ = 5 V, V - = -5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Dynamic Characteristics
Turn-On Timee Turn-Off Timee Break-Before-Make Time Delaye Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = "3.5 V See Figure 2 DG413L Only, VS = 3.5 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 10 nF RL = 50 W , CL = 5 pF pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room Room 21 16 6 5 68 85 9 9 20 pF dB pC 50 75 35 50 50 60 35 40 ns
Power Supplies
Positive Supply Currente Negative Supply Currente Logic Supply Currente Ground Currente I+ IVIN = 0 or 5 V IL IGND Room Full Room Full Room Full Room Full 0.03 - 0.002 0.002 - 0.002 -1 - 7.5 -1 - 7.5 1 7.5 -1 -5 1 7.5 -1 -5 1 5 1 5 mA
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistancee VANALOG rDS(on) V+ = 4.5 V, IS = 5 mA VD = 1 V, 3.5 V Full Room Full 35 5 50 88 5 50 75 V W
A Suffix Limits
- 55 to 150_C
D Suffix Limits
- 40 to 85_C
Symbol
V+ = 5 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Dynamic Characteristics
Turn-On Timee Turn-Off Timee Break-Before-Make Time Delaye Charge Injectione tON tOFF tD Q RL = 300 W , CL = 35 pF VS = 3.5 V, See Figure 2 DG413L Only, VS = 3.5 V, RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 10 nF Room Hot Room Hot Room Room 27 15 6 0.5 pC 50 90 30 55 50 60 30 40 ns
www.vishay.com
4
Document Number: 71397 S-03251--Rev. D, 17-Mar-03
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions Unless Specified Parameter Power Supplies
Positive Supply Currente Negative Supply Currente Logic Supply Currente Ground Currente I+ IVIN = 0 or 5 V IL IGND Room Hot Room Hot Room Hot Room Hot 0.02 - 0.002 0.002 - 0.002 -1 - 7.5 -1 - 7.5 1 7.5 -1 -5 1 7.5 -1 -5 1 5 1 5 mA
A Suffix Limits
- 55 to 150_C
D Suffix Limits
- 40 to 85_C
Symbol
V+ = 5 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
SPECIFICATIONSa (SINGLE SUPPLY 3 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg Channel On Leakage Currentg VANALOG rDS(on) IS(off) ID(off) ID(on) V+ = 2.7 V, V - = 0 V IS = 5 mA, VD = 0.5, 2.2 V V+ = 3.3 V, V - = 0 V VD = 1, 2 V, VS = 2, 1 V V+ = 3.3 V, V - = 0 V VS = VD = 1, 2 V Full Room Full Room Full Room Full Room Full 65 -1 - 15 -1 - 15 -1 - 15 0 3 80 115 1 15 1 15 1 15 -1 - 10 -1 - 10 -1 - 10 0 3 80 100 1 10 1 10 1 10 nA V W
A Suffix Limits
- 55 to 150_C
Limits
- 40 to 85_C
Symbol
V+ = 3 V, V - = 0 V VL = 3 V, VIN = 0.4 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Digital Control
Input Current, VIN Low Input Current, VIN High IIL IIH VIN Under Test = 0.4 V VIN Under Test = 2.4 V Full Full 0.005 0.005 - 1.5 - 1.5 1.5 1.5 -1 -1 1 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = 1.5 V See Figure 2 DG413L Only, VS = 1.5 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 10 nF RL = 50 W , CL = 5 pF pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room Room 50 30 6 1 68 85 6 6 20 pF dB pC 85 150 60 100 85 110 60 85 ns
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Document Number: 71397 S-03251--Rev. D, 17-Mar-03 www.vishay.com
5
Others parts begin by dg
|
|
|
