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Part: DG412HSDJ
Category:
Description: Precision Monolithic Quad SPST CMOS Analog Switches
Company: Vishay Intertechnology
Datasheet: Download DG412HSDJ datasheet File size : 304 kB
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DG411HS/412HS/413HS
New Product
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
FEATURES
D D D D D D D 44-V Supply Max Rating "15-V Analog Signal Range On-Resistance--r DS(on): 25 W Fast Switching--tON: 68 ns Ultra Low Power--PD: 0.35 mW TTL, CMOS Compatible Single Supply Capability
BENEFITS
D D D D Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing
APPLICATIONS
D D D D D Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals
DESCRIPTION
The DG411HS series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 mW) with high speed (tON: 68 ns), the DG411HS family is ideally suited for portable and battery powered industrial and military applications. To achieve high-voltage ratings and superior switching performance, the DG411HS series was built on Vishay Siliconix's high voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG411HS and DG412HS respond to opposite control logic as shown in the Truth Table. The DG413HS has two normally open and two normally closed switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411HS
Dual-In-Line and SOIC
DG411HS QFN16
D1 IN1 IN2 D2
DG411HS
LCC D1 IN1 NC IN2 D2 Key S1 VNC GND S4 4 5 6 7 8 9 10 11 12 13 3 2 1 20 19 18 17 16 15 14 S2 V+ NC VL S3
IN1 D1 S1 VGND S4 D4 IN4
1 2 3 4 5 6 7 8 Top View
16 15 14 13 12 11 10 9
IN2 D2 S2 V+ VL S3 D3 IN3 S1 VGND S4 1 2 3 4
16
15
14
13
12 11 10 9
S2 V+ VL S3
5
6
7
8
D4 IN4 IN3 D3 Top View
D4 IN4 NC IN3 D3 Top View
TRUTH TABLE
Logic
0 1
DG411HS
ON OFF
DG412HS
OFF ON
Document Number: 72053 S-22064--Rev. A, 18-Nov-02
www.vishay.com
1
DG411HS/412HS/413HS
Vishay Siliconix
New Product
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413HS
Dual-In-Line and SOIC
DG413HS QFN16
D1 IN1 IN2 D2 IN2 D2 S2 V+ VL S3 D3 5 IN3 6 7 8 D4 IN4 IN3 D3 Top View S1 VGND S4 1 2 3 4 12 11 10 9 S2 V+ NC VL S3 GND S4 Key 4 5 6 7 8 D1 3 S1 V-
DG413HS
LCC IN1 NC 2 1 IN2 20 D2 19 18 17 16 15 14 S2 V+ NC VL S3
IN1 D1 S1 VGND S4 D4 IN4
1 2 3 4 5 6 7 8 Top View
16 15 14 13 12 11 10 9
16
15
14
13
9 D4
10
11
12 IN3
13 D3
IN4 NC
Top View
TRUTH TABLE
Logic
0 1
SW1, SW4
OFF ON
SW2, SW3
ON OFF
ORDERING INFORMATION
Temp Range Package Part Number
DG411HS/412HS
DG411HSDJ 16-Pin Plastic DIP - 40 to 85_C _ DG412HSDJ DG411HSDY 16-Pin Narrow SOIC DG412HSDY DG411HSDN 16-Pin QFN 4x4mm DG412HSDN DG411HSAK, DG411HSAK/883 - 55 to 125_C 16-Pin CerDIP LCC-20 DG412HSAK, DG412HSAK/883 DG411HSAZ/883
DG413HS
16-Pin Plastic DIP - 40 to 85_C 85 C 16-Pin Narrow SOIC 16-Pin QFN 4x4mm - 55 to 125_C _ 16-Pin CerDIP LCC-20 DG413HSDJ DG413HSDY DG413HSDN DG413HSAK, DG413HSAK/883
www.vishay.com
2
Document Number: 72053 S-22064--Rev. A, 18-Nov-02
DG411HS/412HS/413HS
New Product
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V - ) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA Storage Temperature (AK, AZ Suffix) . . . . . . . . . . . . . . . - 65 to 150_C (DJ, DY, DN Suffix) . . . . . . . . . . . - 65 to 125_C 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 16-Pin (4x4mm) QFNf . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 25_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C f. Derate 23.5 mW/_C above 70_C
Vishay Siliconix
Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current Channel On Leakage Current VANALOG rDS(on) IS(off) ID(off) ID(on) V+ = 13.5 V, V - = -13.5 V IS = -10 mA, VD = "8.5 V V+ = 16.5, V- = -16.5 V VD = "15.5 V, VS = #15.5 V V+ = 16.5 V, V - = -16.5 V VS = VD = "15.5 V Full Room Full Room Full Room Full Room Full 25 "0.1 "0.1 "0.1 - 0.25 - 20 - 0.25 - 20 - 0.4 - 40 - 15 15 35 45 0.25 20 0.25 20 0.4 40 - 0.25 -5 - 0.25 -5 - 0.4 - 10 - 15 15 35 45 0.25 5 0.25 5 0.4 10 nA V W
A Suffix
- 55 to 125_C
D Suffix
- 40 to 85_C
Symbol
V+ = 15 V, V - = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Digital Control
Input Current, VIN Low Input Current, VIN High Input Capacitancee IIL IIH CIN VIN Under Test = 0.8 V VIN Under Test = 2.4 V f = 1 MhZ Full Full Room 0.005 0.005 5 - 0.5 - 0.5 0.5 0.5 - 0.5 - 0.5 0.5 0.5 mA pF
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = "10 V See Figure 2 DG413HS Only, VS = 10 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 1 nF RL = 50 W , CL = 5 pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room Room 68 42 105 127 80 94 105 116 80 90 ns
20 22 - 91 - 88 12 12 30 pF dB pC
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IIL IGND Room Full V+ = 16.5, V- = -16.5 V VIN = 0 or 5 V Room Full Room Full Room Full 0.0001 - 0.0001 0.0001 - 0.0001 -1 -5 -1 -5 1 5 -1 -5 www.vishay.com 1 5 -1 -5 1 5 1 5
mA
Document Number: 72053 S-22064--Rev. A, 18-Nov-02
3
DG411HS/412HS/413HS
Vishay Siliconix
New Product
SPECIFICATIONSa FOR UNIPOLAR SUPPLIES
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) V+ = 10.8 V, IS = -10 mA VD = 3 V, 8 V Full Room Full 49 12 80 100 12 80 100 V W
A Suffix
- 55 to 125_C
D Suffix
- 40 to 85_C
Symbol
V+ = 12 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection tON tOFF tD Q RL = 300 W , CL = 35 pF VS = 8 V, See Figure 2 DG413HS Only, VS = 8 V, RL = 300 W , CL = 35 pF Vg = 6 V, Rg = 0 W , CL = 1 nF Room Hot Room Hot Room Room 95 36 140 180 70 79 140 160 70 74 ns
60 60 pC
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IV+ = 13.2, VIN = 0 or 5 V IL IGND Room Hot Room Hot Room Hot Room Hot 0.0001 - 0.0001 0.0001 - 0.0001 -1 -5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 1 5
mA
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. VD and Dual Supply Voltage
65 rDS(on) - Drain-Source On-Resistance (W) rDS(on) - Drain-Source On-Resistance (W) TA = 25_C 55 "5 V
On-Resistance vs. VD and Unipolar Supply Voltage
300 V+ = 3.0 V VL = 3 V TA = 25 _C VL = 5 V
250
45 "8 V
200 V+ = 5.0 V
35
"10 V "12 V "15 V
150
25
100
15
"20 V
V+ = 8.0 V V+ = 12.0 V V+ = 15.0 V
50 V+ = 20.0 V 0 2 4 6 8 10 12 14 16 18 20
5 - 20
0 - 15 - 10 -5 0 5 10 15 20 VD - Drain Voltage (V) VD - Drain Voltage (V)
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4
Document Number: 72053 S-22064--Rev. A, 18-Nov-02
DG411HS/412HS/413HS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Analog Voltage
50 rDS(on) - Drain-Source On-Resistance (W) V+ = +5 V V - = -15 V VL = 5 V ID(on) IS(off) ID(off) - 25 45 40 35 125_C 30 85_C 25 25_C 20 15 10 5 - 15 - 55_C V+ = 15 V V - = -15 V VL = 5 V
Vishay Siliconix
On-Resistance vs. VD and Temperature
25
0 IS, ID (pA)
- 50
- 75
- 100 - 15
- 10
-5
0
5
10
15
- 10
VD or VS -- Drain or Source Voltage (V)
-5 0 5 VD - Drain Voltage (V)
10
15
On-Resistance vs. VD and Temperature
75 rDS(on) - Drain-Source On-Resistance (W) 65 125_C 85_C 25_C - 55_C LOSS, OIRR, XTLAK (dB) 55 45 35 25 15 5 0 2 4 6 8 10 12 VD - Drain Voltage (V) V+ = 12 V V- = 0 V VL = 5 V 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 100 - 110 100 K
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
LOSS
XTALK OIRR V+ = 15 V V - = -15 V VL = 5 V RL = 50 W
1M
10 M Frequency (Hz)
100 M
1G
Charge Injection vs. Analog Voltage
100 80 Q - Charge Injection (pC) 60 Q - Charge Injection (pC) 40 20 0 - 20 - 40 - 60 - 80 - 100 - 15 V = $12 V V = $15 V 100 80 60 40 20 0 - 20 - 40 - 60 - 80 - 100 - 15
Charge Injection vs. Analog Voltage
V = $15 V
V = $12 V
- 10
-5
0
5
10
15
- 10
-5
0
5
10
15
V - Drain Voltage (V)
VS - Source Voltage (V)
Document Number: 72053 S-22064--Rev. A, 18-Nov-02
www.vishay.com
5
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