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Part: DG2017
Category:
Description: Low-Voltage, Low Ron, Dual DPDT Analog Switch
Company: Vishay Intertechnology
Datasheet: Download DG2017 datasheet File size : 184 kB
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DG2017
New Product
Vishay Siliconix
Low-Voltage, Low rON, Dual DPDT Analog Switch
FEATURES
D Low Voltage Operation (2.0 V to 5.5 V) D Low On-Resistance @ 2.7 V - rON: SW1, SW2 - 3.2 W SW3, SW4 - 0.64 W D Fast Switching: tON = 46 ns tOFF = 21 ns D QFN-16 (4x4 mm) Package
BENEFITS
D D D D Space Saving Solution Low Power Consumption Guaranteed Low Voltage Operation Low Voltage Logic Compatible
APPLICATIONS
D D D D D Cellular Phones Integrated Speaker Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems
DESCRIPTION
The DG2017 is a dual DPDT (double-pole/double-throw), optimized for high performance analog switching, and specifically designed to benefit portable audio applications. One pair of double-throw switches is sub 1 W for low impedance speaker performance while the second pair of double-throw switches is suitable for microphone applications. With the DPDT configuration, the DG2017 provides the flexibility for stereo-single-end or differential BTL output structures with a fully integrated differential microphone switching solution. The DG2017 is an integrated monolithic device in a QFN-16 (4 x 4 mm) package that provides a space saving solution over the use of multiple single SPDT devices as well as providing the advantage of on-resistance flatness and matching that single SPDT devices cannot offer. The DG2017 provides low charge injection (2 pC), fast switching time (tON and tOFF less than 100 ns), excellent Off-Isolation and Crosstalk (70 dB @ 100 kHz). During operation, continuous current through any or all switches is rated at "200 mA, ideal for portable audio applications. Built on Vishay Siliconix's low voltage CMOS process, the DG2017 contains an epitaxial layer that prevents latchup. Break-before-make is guaranteed. When on, each switch conducts equally well in both directions, and block up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
QFN-16 (4 X 4)
COM1 NO1 16 15 V+ 14 NC4 13
TRUTH TABLE Logic NC1, 2, 3 and 4
ON OFF
NO1, 2, 3 and 4
OFF ON
NC1 IN1, IN2 NO2 COM2
1 2 3 4
12 11 10 9
COM4 NO4 IN3, IN4 NC3
0 1
ORDERING INFORMATION Temp Range
-40 to 85°C
Package
16-Pin QFN (4 x 4 mm)
Part Number
DG2017DN
5 NC2
6 GND
7
8
NO3 COM3 www.vishay.com
Top View Document Number: 72228 S-31067--Rev. A, 26-May-03
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DG2017
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "200 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Package Solder Reflow Conditionsd 16-Pin QFN (4 x 4 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C Power Dissipation (Packages)b QFN-16 (4x4 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 23.5 mW/_C above 70_C d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V
Limits
- 40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 1.6 Ve
Tempa
Minb
Typc
Maxb
Unit
DC Characteristics
On-Resistance rO N (SW1, SW2) rO N (SW3, SW4) rO N (SW1, SW2) rO N (SW3, SW4) DrO N (SW1, SW2) DrO N (SW3, SW4) INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA Room Full Room Full Room Full Room Full Room Full Room Full Room Full Room Full Room Full - 0.5 5.0 - 0.5 5.0 - 0.5 5.0 3.2 0.67 1.4 0.12 3.7 4.3 1.1 1.2 2.0 0.3 0.3 0.3 0.5 5.0 0.5 5.0 0.5 5.0 nA W
rON Flatnessd
rON Matchd
Switch Off Leakage Current
V+ = 3.3 V, VNO, VNC = 0.3 V/3.0 V VCOM = 0.3 V/3.0 V V+ = 3.3 V, VNO=VNC VCOM =0.3 V/3.0 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
1.6 0.4 6 -1 1
VINL
Cin
V pF mA
IINL or IINH
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Document Number: 72228 S-31067--Rev. A, 26-May-03
DG2017
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Dynamic Characteristics
Turn-On Time tON, (SW1, SW2) tON, (SW3, SW4) tON, (SW1, SW2) tON, (SW3, SW4) td, (SW1, SW2) td, (SW3, SW4) QINJ, (SW1, SW2) QINJ, (SW3, SW4) OIRR, (SW1, SW2) OIRR, (SW3, SW4) XTALK, (SW1, SW2) XTALK, (SW3, SW4) COFF, (SW1, SW2) COFF,, (SW3, SW4) CON, (SW1, SW2) CON, (SW3, SW4) VIN = 0 or V+ f = 1 MHz V+, Room 86 283 RL = 50 W, CL = 5 pF, f = 1 MHz (Figure 4) Room - 69 - 51 12 43 pF CL = 1 nF, VGEN = 0 V, RGEN = 0 W (Figure 3) VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF (Figure 1,2) Room Full Room Full Room Full Room Full Full Full 5 5 62 46 12 21 45 26 2 Room 1 - 68 - 51 dB pC 85 91 74 79 35 36 46 48
Vishay Siliconix
Limits
- 40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 1.6 Ve
Tempa
Minb
Typc
Maxb
Unit
Turn-Off Time
ns
Break-Before-Make Time
Charge Injectiond
Off-Isolationd
Crosstalkd
NO, NC Off Capacitanced
Channel-On Capacitanced
Power Supply
Power Supply Range Power Supply Current Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. V+ I+ VOE = 0 or V+ 2.0 5.5 1.0 V mA
Document Number: 72228 S-31067--Rev. A, 26-May-03
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3
DG2017
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Single Supply Voltage
6.00 5.00 r ON - On-Resistance ( W ) 4.00 3.00 2.00 1.00 0.00 0 1 2 3 4 5 VCOM - Analog Voltage (V) V+ = 5.0 V T = 25_C SW1 & SW2 IS=10 mA r ON - On-Resistance ( W ) 1.600 1.400 1.200 1.000 0.800 0.600 0.400 0.200 0.000 0 1 2 3 4 5 VCOM - Analog Voltage (V) V+ = 2.3 V, IS = 50 mA V+ = 2.7 V, IS = 100 mA V+ = 3.3 V, IS = 100 mA T = 25_C SW3 & SW4
rON vs. VCOM and Single Supply Voltage
V+ = 2.3 V
V+ = 2.7 V V+ = 3.3 V
V+ = 5.0 V, IS = 100 mA
6.00 5.00 r ON - On-Resistance ( W ) 4.00 3.00 2.00 1.00 0.00 0
rON vs. Analog Voltage and Temperature
V+ = 2.7 V 85_ C 25_ C -40_ C V+ = 5.0 V 85_ C 25_ C -40_ C
1.400 1.200 r ON - On-Resistance ( W ) 1.000 0.800 0.600 0.400
rON vs. Analog Voltage and Temperature
V+ = 2.7 V 85_ C 25_ C -40_ C V+ = 5.0 V 85_ C 25_ C -40_ C
SW1 and SW2 IS=10 mA 1 2 3 4 5
SW3 and SW4 0.200 0.000 0 1 IS=100 mA
VCOM - Analog Voltage (V)
2 3 VCOM - Analog Voltage (V)
4
5
10000
Supply Current vs. Temperature
10 mA 1 mA
Supply Current vs. Input Switching Frequency
V+ = 3 V
I+ - Supply Current (nA)
1000
I+ - Supply Current (A)
100 mA 10 mA 1 mA 100 nA 10 nA 1 nA 100 nA 10 100 1K 10 K 100 K 1M
100
V+ = 5.0 V VIN = 0 V V+ = 3.0 V VIN = 0 V
10 - 60
- 40
- 20
0
20
40
60
80
100
10 M
Temperature (_C) www.vishay.com
Input Switching Frequency (Hz) Document Number: 72228 S-31067--Rev. A, 26-May-03
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DG2017
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Temperature
1000 V+ = 5.0 V 800 600 INO(off), IINC(off) 100 ICOM(on) 400 Leakage Current (pA) ICOM(on) 200 0 - 200 - 400 - 600 - 800 0.0 INO(off), INC(off) ICOM(off)
Vishay Siliconix
Leakage vs. Analog Voltage
Leakage Current (pA)
Leakage Current (pA)
10
ICOM(off) 1 - 60 - 40 - 20 0 20 40 60 80 100
V+ = 3 V
0.5
1.0
1.5
2.0
2.5
3.0
Temperature (_C)
VCOM, VNO, VNC - Analog Voltage (V)
Switching Time vs. Temperature
160 140 t ON / t OFF - Switching Time (m s) t ON / t OFF - Switching Time (m s) 120 100 80 60 40 20 0 - 60 tON V+ = 3 V tON V+ = 5 V tOFF V+ = 2 V tOFF V+ = 3 V tOFF V+ = 5 V - 40 - 20 0 20 40 60 80 100 Temperature (_C) tON V+ = 2 V 80 100
Switching Time vs. Temperature
tON V+ = 2 V
60 tON V+ = 3 V 40 tON V+ = 5 V 20 tOFF V+ = 5 V 0 - 60 tOFF V+ = 3 V - 40 - 20 0 20 40 60 80 100 tOFF V+ = 2 V
Temperature (_C)
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
10 0 - 10 Loss, OIRR, X TALK (dB) - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 100 K 1M 10 M Frequency (Hz) Document Number: 72228 S-31067--Rev. A, 26-May-03 100 M 1G DG2017 SW1 and SW2 V+ = 3 V RL = 50 W Loss Loss, OIRR, X TALK (dB) XTALK OIRR 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 100 K
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
Loss XTALK OIRR
DG2017 SW3 and SW4 V+ =3 V RL = 50 W
1M
10 M Frequency (Hz)
100 M
1G
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