|
|
Part: DG2015DN
Category:
Description: Low-Voltage, Low Ron, Quad SPDT Analog Switch
Company: Vishay Intertechnology
Datasheet: Download DG2015DN datasheet File size : 184 kB
Request For quote: Find where to buy DG2015DN
Datasheet text preview:
DG2015
New Product
Vishay Siliconix
Low-Voltage, Low rON, Dual DPDT Analog Switch
FEATURES
D D D D Low Voltage Operation (2.7 V to 3.3 V) Low On-Resistance - rON: 0.85 W 3 dB Loss @ 100 MHz Fast Switching: tON = 40 ns tOFF = 35 ns D QFN-16 Package
BENEFITS
D D D D D Reduced Power Consumption High Accuracy Reduce Board Space TTL/1.8-V Logic Compatible High Bandwidth
APPLICATIONS
D D D D D Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems
DESCRIPTION
The DG2015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG2015 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2015 is built on Vishay Siliconix's low voltage JI2 process. An epitaxial layer prevents latchup. Break-before-make is guaranteed. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2015
QFN-16 (4 X 4) NC1 COM1 GND COM4 16 15 14 13
TRUTH TABLE Logic
12 11 10 9 NC4 NO4 0 1
NC1, 2, 3 and 4
ON OFF
NO1, 2, 3 and 4
OFF ON
NO1 INA NO2 NC2
1 2 3 4
ORDERING INFORMATION
INB NO3
Temp Range
-40 to 85°C
Package
16-Pin QFN (4 x 4 mm)
Part Number
DG2015DN
5 COM2
6 V+
7
8
COM3 NC3
Top View
Document Number: 71971 S-03423--Rev. B, 03-Mar-03
www.vishay.com
1
DG2015
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "150 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Package Solder Reflow Conditionsd 16-Pin QFN (4 x 4 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C Power Dissipation (Packages)b QFN-16c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 23.5 mW/_C above 70_C d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatness rON Match VNO, VNC, VCOM rO N rO N Flatness DrO N INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA V+ = 2.7 V VCOM = 0 to V+ INO, INC = 100 mA V+, Full Room Full Room Room Room Full Room Full Room Full -1 - 10 -1 - 10 -1 - 10 0 0.85 0.16 0.15 1 10 1 10 1 10 nA V+ 1.6 1.7 W V
Limits
- 40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
Switch Off Leakage Current
V+ = 3.3 V, VNO, VNC = 1 V/3 V VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
2 0.4 4 -1 1
VINL
Cin
V pF mA
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+ f = 1 MHz V+, CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF f = 1 MHz W, pF, VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF Room Full Room Full Full Room Room Room Room Room Room Room 1 40 35 3 7 - 67 - 70 63 67 200 196 pF pC dB 65 67 60 62 ns
www.vishay.com
2
Document Number: 71971 S-03423--Rev. B, 03-Mar-03
DG2015
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Power Supply
Power Supply Range Power Supply Current Power Consumption Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. V+ I+ PC VIN = 0 or V+ Full Full 2.7 3.3 1.0 3.3 V mA mW
Vishay Siliconix
Limits
- 40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
2.5 T = 25_C IS = 100 mA r ON - On-Resistance ( W ) 2.5 IS = 100 mA 2.0 V+ = 3 V 1.5 85_C 25_C - 40_C
rON vs. Analog Voltage and Temperature
2.0 r ON - On-Resistance ( W )
1.5 V+ = 3.0 V, 1.0
1.0
0.5
0.5
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
Supply Current vs. Temperature
100 V+ = 3 V VIN = 0 V I+ - Supply Current (nA) 10 I+ - Supply Current (A) 10 mA 1 mA 100 mA 10 mA 1 mA 100 nA 10 nA 1 nA 0.1 - 60 100 pA - 40 - 20 0 20 40 60 80 100
Supply Current vs. Input Switching Frequency
V+ = 3 V
1
10
100
1K
10 K
100 K
1M
10 M
Temperature (_C) Document Number: 71971 S-03423--Rev. B, 03-Mar-03
Input Switching Frequency (Hz) www.vishay.com
3
DG2015
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Temperature
1000 V+ = 3 V 800 600 400 200 0 - 200 - 400 - 600 1 - 60 - 800 0.0 INO(off), IINC(off) ICOM(on) V+ = 3 V ICOM(off)
Leakage vs. Analog Voltage
Leakage Current (pA) Leakage Current (pA)
100 ICOM(on) ICOM(off) 10 INO(off), IINC(off)
- 40
- 20
0
20
40
60
80
100
Leakage Current (pA)
0.5
1.0
1.5
2.0
2.5
3.0
Temperature (_C)
VCOM, VNO, VNC - Analog Voltage (V)
60
Switching Time vs. Temperature
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
10 LOSS
t ON / t OFF - Switching Time (m s)
- 10 Loss, OIRR, X TALK (dB) 50
- 30
40
tON V+ = 3 V
- 50
OIRR
30
tOFF V+ = 3 V
XTALK V+ = 3 V RL = 50 W
- 70
20 - 60
- 90 - 40 - 20 0 20 40 60 80 100 100 K 1M 10 M Frequency (Hz) 100 M 1G Temperature (_C)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
Switching Threshold vs. Supply Voltage
30 25 Q - Charge Injection (pC) 20 15 10 5 0
Charge Injection vs. Analog Voltage
- Switching Threshold (V)
V+ = 3 V
VT
1
2
3
4
5
6
7
0
1
2
3
4
5
6
V+ - Supply Voltage (V) www.vishay.com
VCOM - Analog Voltage (V) Document Number: 71971 S-03423--Rev. B, 03-Mar-03
4
DG2015
New Product
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND 0V CL (includes fixture and stray capacitance) VOUT + VCOM R L ) R ON RL 300 W CL 35 pF COM Switch Output VOUT Switch Output 0V tON tOFF VINH 50% VINL .9 x VOUT
Vishay Siliconix
tr t 5 ns tf t 5 ns
R
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
L
0
Figure 1.
Switching Time
V+ Logic Input COM VO RL 300 W GND CL 35 pF VINH VINL tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN
VNC = VNO VO Switch 0V Output
90%
tD
tD
CL (includes fixture and stray capacitance)
Figure 2.
Break-Before-Make Interval
V+
Rgen + Vgen VIN = 0 - V+
V+ COM IN GND NC or NO VOUT CL = 1 nF
VOUT IN
DVOUT
On
Off Q = DVOUT x CL
On
IN depends on switch configuration: input polarity determined by sense of switch.
Figure 3.
Charge Injection
Document Number: 71971 S-03423--Rev. B, 03-Mar-03
www.vishay.com
5
Others parts begin by dg
|
|
|
