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Part: DG200B
Category:
Description: Monolithic Dual SPST CMOS Analog Switch
Company: Vishay Intertechnology
Datasheet: Download DG200B datasheet File size : 184 kB
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DG200B
Vishay Siliconix
Monolithic Dual SPST CMOS Analog Switch
FEATURES
D D D D "15 V Input Signal Range 44-V Maximum Supply Ranges On-Resistance: 45 W TTL and CMOS Compatibility
BENEFITS
D Wide Dynamic Range D Simple Interfacing D Reduced External Component Count
APPLICATIONS
D D D D Servo Control Switching Programmable Gain Amplifiers Audio Switching Programmable Filters
DESCRIPTION
The DG200B is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally suited for designs requiring a wide analog voltage range coupled with low on-resistance. Each switch conducts equally well in both directions when on, and blocks up to 30 V peak-to-peak when off. In the on condition, this bi-directional switch introduces no offset voltage of its own.
The DG200B is designed on Vishay Siliconix' improved PLUS-40 CMOS process. An epitaxial layer prevents latchup.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Plastic Dip IN2 NC GND NC S2 D2 V 1 2 3 4 5 6 7 Top View 14 13 12 11 10 9 8 IN1 NC V+ Substrate NC S1 D1 NC
TRUTH TABLE
Logic
0 1 Logic "0" v 0.8 V Logic "1" w 2.4 V
Switch
ON OFF
Document Number: 71357 S-05721--Rev B., 18-Feb-02
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DG200B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
40 to 85_C
Package
14-Pin Plastic DIP
Part Number
DG200BDJ
ABSOLUTE MAXIMUM RATINGS
V+ to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V) 2 V to (V+) +2 V or 30 mA, whichever occurs first Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current S or D (Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 150_C Power Dissipation (Package)b 14-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 25_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ SX VL Level Shift/ Drive INX V V+ DX GND V
FIGURE 1.
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Document Number: 71357 S-05721--Rev B., 18-Feb-02
DG200B
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current Drain Off Leakage Current Channel On Leakage Currentf VANALOG rDS(on) IS(off) ID(off) ID(on) VD = "10 V, IS = 1 mA VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = "14 V Full Room Full Room Full Room Full Room Full 2 100 2 100 2 200 15 45 15 85 100 2 100 2 100 2 200 nA V W
Limits
40 to 85_C
Symbol
V+ = 15 V, V = 15 V VIN = 2.4 V, 0.8 Vf
Tempb
Minc
Typd
Maxc
Unit
"0.01 "0.01 "0.1
Digital Control
VIN = 2.4 V Input Current with Input Voltage High IINH VIN = 15 V IINL VIN = 0 V Room Full Room Full Room Full 0.5 1 0.5 1 0.0009 0.005 0.0015 0.5 1
mA
Input Current with Input Voltage Low
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel-On Capacitance Off Isolation Crosstalk (Channel-to-Channel) tON tOFF Q CS(off) CD(off) CD(on) + CS(On) OIRR XTALK VIN = 5 V, RL = 75 W VS = 2 V, f = 1 MHz See Switching Time Test Circuit CL = 1000 pF, Vg = 0 V Rg = 0 W f = 140 kHz VIN = 5 V VS = 0 V VD = 0 V Room Room Room Room Room Room Room Room 300 200 1 5 5 16 90 95 dB pF 1000 425 ns
pC
VD = VS = 0 V, VIN = 0 V
Power Supplies
Positive Supply Current Negative Supply Current I+ I Both Channels On or Off VIN = 0 V and 5.0 V Room Room 10 50 mA
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is aminimum and the most positive a maximum, is used in this data sheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Document Number: 71357 S-05721--Rev B., 18-Feb-02
www.vishay.com
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DG200B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
110 r DS(on) Drain-Source On-Resistance ( W ) 100 90 80 70 60 50 40 30 20 10 20 16 12 8 4 0 4 8 12 16 20 VD Drain Voltage (V) "20 V "10 V "15 V "5 V r DS(on) Drain-Source On-Resistance ( W ) 100 90 80 70 60 50 40 30 20 10 0 15 125_C 85_C 25_C 55_C V+ = 15 V V = 15 V
rDS(on) vs. VD and Temperature
10
5
0
5
10
15
VD Drain Voltage (V)
Leakage Current vs. Temperature
1 nA V+ = 15 V V = 15 V VS, VD = "14 V I S,I D Current (pA) 40 30 20 I S,I D Current 100 pA 10 0 10 20 30 1 pA 55 40 20
Leakage Currents vs. Analog Voltage
V+ = 22 V V = 22 V TA = 25_C ID(on)
IS(off), ID(off)
IS(off), ID(off) 10 pA
35
15
5
25
45
65
85
105 125
15
10
5
0
5
10
15
20
Temperature (_C)
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Document Number: 71357 S-05721--Rev B., 18-Feb-02
DG200B
Vishay Siliconix
TEST CIRCUITS
VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. +15 V
Logic Input
3V 50% 0V tOFF VS 90% 3V GND tr <20 ns tf <20 ns VS = +5 V S IN
V+ D VO CL 35 pF
Switch Input Switch Output
V
RL 1 kW
VO tON 15 V VO = VS RL RL + rDS(on)
FIGURE 2. Switching Time
+15 V D VO Rg V+ S IN 3V GND V DVO = measured voltage error due to charge injection The charge injection in coulombs is DQ = CL x DVO 15 V D VO CL 1000 pF INX ON OFF ON VO
Vg
FIGURE 3. Charge Injection
C +15 V C
V+
+15 V
V+ VS S D VO Rg = 50 W 0V S1 IN1 S2 D2 D1 50 W VO RL GND 15 V 15 V Off Isolation = 20 log VS VO XTALK = 20 log C = RF bypass VS VO V C
VS Rg = 50 W 5V
IN GND V C
RL
NC 0V
IN2
FIGURE 4. Off Isolation
FIGURE 5. Channel-to-Channel Crosstalk
Document Number: 71357 S-05721--Rev B., 18-Feb-02
www.vishay.com
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