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Part: S6A13
Category:
Description:
Company: Toshiba America Electronic Components, Inc.
Datasheet: Download S6A13 datasheet File size : 753 kB
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S6A13
TOSHIBA Thyristor Silicon Planar Type
S6A13
Condenser Discharge Control Applications
Unit: mm · · · · · FWD included between cathode and anode Critical rate of rise of ON-state current: di/dt = 750 A/µs Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 µs) Repetitive peak OFF-state voltage: VDRM = 800 V Gate trigger current: IGT = 30 mA (max)
Maximum Ratings
Characteristics Repetitive peak OFF-state voltage Repetitive peak surge ON-state current (Note) Repetitive peak surge forward current (Note) Critical rate of rise of ON-state current (Note) Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range Symbol VD R M ITRM IFRM Rating 800 500 500 Unit V A A
di/dt PG M PG (AV) VFGM VRGM IGM Tj Tstg
750 5 0.5 10 -5 2 -40~125 -40~150
A/µs W W V V A °C °C
JEDEC JEITA TOSHIBA
13-10J1B
Weight: 1.5 g (typ.)
Note: VD 60 mA, tgw > 10 µs, tgr < 150 ns = = = =
Marking
S6A13
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Characteristics indicator
1
2004-07-06
S6A13
Electrical Characteristics (Ta = 25°C)
Characteristics Repetitive peak OFF-state current Peak ON-state voltage (thyristor) Peak forward voltage (diode) Gate trigger voltage Gate trigger current Gate non-trigger voltage Critical rate of rise of OFF-state voltage Holding current Thermal resistance (junction to ambient) Symbol IDRM VTM VF M VG T IGT VGD dv/dt IH Rth (j-a) Test Condition VDRM = Rated ITM = 25 A IFM = 25 A VD = 6 V, RL = 10 VD = Rated, Tc = 125°C VDRM = Rated, Tc = 125°C Exponential Rise VD = 6 V, ITM = 1 A DC Min 0.2 Typ. 50 Max 10 1.5 2.0 1.0 30 35 70 Unit µA V V V mA V V/µs mA °C/W
Test Circuit Examples R L
VD
0.5 IP
IP
t tw = 2 µs di/dt = 0.5 IP t tw = LC , IP =
C
VD L/C
Equivalent Circuit
ANODE
GATE
CATHODE
S6A13
2
2004-07-06
S6A13
IGT (Tc)/IGT (Tc = 25°C) Tc
2.5
(typical)
2.0 VD = 6 V RL = 10
VGT (Tc)/VGT (Tc = 25°C) Tc
(typical)
VD = 6 V RL = 10
2.0
VGT (Tc)/VGT (Tc = 25°C)
IGT (Tc)/IGT (Tc = 25°C)
1.5
1.5
1.0
1.0
0.5
0.5
0.0 -60
-20
20
60
100
140
0.0 -60
-20
20
60
100
140
Case temperature
Tc
(°C)
Case temperature
Tc
(°C)
IH (Tc)/IH (Tc = 25°C) Tc
2.5
(typical)
5 VD = 6 V ITM = 1 A
Pulse trigger characteristics
VD = 6 V 4 RL = 10 Tc = 25°C
(typical)
Resistanc e load
2.0
IH (Tc)/IH (Tc = 25°C)
Rectangular waveform
iGT(tw)/IGT
1.5
3 tw 2
iGT
1.0
0.5
1
0.0 -60
-20
20
60
100
140
0 0.1
1
10
100
Case temperature
Tc
(°C)
Gate trigger pulse width tw
(µs)
iT vT (thyristor)
1000 1000
iF vF (diode)
(A)
iT
(A)
Instantaneous ON-state current
100
Instantaneous forward current
iF
100 10 10 Tj = 125°C
25°C
Tj = 125°C 1 0.0
25°C
1 0.0
0.5
1.0
1.5
2.0
2.5
3.0
1.0
2.0
3.0
4.0
5.0
6.0
Instantaneous ON-state voltage vT
(V)
Instantaneous forward voltage vF
(V)
3
2004-07-06
Others parts begin by s6
S6-1 S6-2
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