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Part: M28F201-90K1R
Category:
Memory
-> Flash
Description: 2 MB 256k X 8, Chip Erase Flash Memory
Company: ST Microelectronics, Inc.
Datasheet: Download M28F201-90K1R datasheet File size : 24 kB
Request For quote: Find where to buy M28F201-90K1R
Datasheet text preview:
M28F201
2 Mb (256K x 8, Chip Erase) FLASH MEMORY
5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Active Current: 15mA typical Stand-by Current: 10µA typical 10,000 PROGRAM/ERASE CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code: F4h DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment . The access time o f 70ns makes the device suitable for use in high speed microprocessor systems.
PLCC32 (K)
TSOP32 (N) 8 x 20 mm
Figure 1. Logic Diagram
VCC
VPP
18 A0-A17
8 DQ0-DQ7
W E
M28F201
Table 1. Signal Names
A0-A17 DQ0-DQ7 E G W VPP VCC VSS April 1997 Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Program Supply Supply Voltage Ground
G
VSS
AI00637C
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M28F201
Figure 2A. LCC Pin Connections Figure 2B. TSOP Pin Connections
1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7
9
M28F201
25
17 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6
AI00638C
A11 A9 A8 A13 A14 A17 W VCC VPP A16 A15 A12 A7 A6 A5 A4
A 12 A 15 A 16 V PP V CC W A 17
1
32
8 9
M28F201 (Normal)
25 24
16
17
AI00639C
G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
Figure 2C. TSOP Reverse Pin Connections
G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
1
32
8 9
M28F201 (Reverse)
25 24
16
17
AI00640D
A11 A9 A8 A13 A14 A17 W VCC VPP A16 A15 A12 A7 A6 A5 A4
DEVICE OPERATION The M28F201 FLASH Memory product employs a technology similar to a 2 Megabit EPROM but add to the device functionality by providing electrical erasure and programming. These functions are managed by a command register. The functions that are addressed via the command register depend o n the voltage applied to the VP P, program voltage, input. When VPP is less than or equal to 6.5V, the command register is disabled and the M28F201 functions as a read only memory providing operating modes similar to an EPROM (Read, Output Disable, Electronic Signature Read and Standby). When VPP is raised to 12V the command register is enabled and this provides, in addition, Erase and Program operations. READ ONLY MODES, VPP 6.5V For all Read Only Modes, except S tandby Mode, the Write Enable input W should be High. In the Standby Mode this input is 'don't care'. Read Mode. The M28F201 has two enable inputs, E and G, both of which must be Low in order to output data from the memory. The Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data o n to the output, independant of the device selection.
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M28F201
Table 2. Absolute Maximum Ratings
Symbol TA TSTG VIO VC C VA9 VPP Parameter Am bient Operating Temperature Storage Temperature Input or Output Voltages Supply Voltage A9 Voltage Program Supply Voltage, during Erase or Programming Value 40 to 125 65 to 150 0.6 to 7 0.6 to 7 0.6 to 13.5 0.6 to 14 Unit °C °C V V V V
Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.
Table 3. Operations
VPP
(1)
Operation Read
E VIL VIL VIH VIL VIL VIL VIL VIH
G VI L VIH X VI L VI L VIH VIH X
W VI H VI H X VI H VI H VIL Pulse VI H X
A9 A9 X X VID A9 A9 X X
DQ0 - D Q7 Data Output Hi-Z Hi-Z Codes Data Output Data Input Hi-Z Hi-Z
Read Only
VPPL
Output Disable Standby Electronic Signature Read
Read/Write (2)
VPPH
Write Output Disable Standby
Notes: 1. X = VIL or VIH. 2. Refer also to the Command table.
Table 4. Electronic Signature
Identifier Manufacturer's Code Device Code A0 VIL VIH DQ7 0 1 D Q6 0 1 DQ5 1 1 DQ4 0 1 DQ3 0 0 DQ2 0 1 DQ1 0 0 DQ0 0 0 Hex Data 20h F4h
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