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Part: IRFBC40
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 600V - 1.0 Ohm - 6.2A - TO-220 Powermesh MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download IRFBC40 datasheet File size : 183 kB
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Datasheet text preview:
®
IRFBC40
N - CHANNEL 600V - 1.0 - 6.2 A - TO-220 PowerMESHTM MOSFET
TYPE I R F BC 4 0
s s s s s
V DS S 6 00 V
R D S (o n) < 1.2
ID 6 .2 A
TYPICAL RDS(on) = 1.0 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1 2
DESCRIPTION This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
s
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DG R VGS ID ID ID M ( · ) Ptot dv/dt(1) Tstg Tj Parameter D r a i n - so u rc e Voltage (V G S = 0) D r a i n - gate Voltage (R G S = 20 k) G a t e - s o u r c e Voltage D r a i n Current (continuous) at T c = 25 o C D r a i n Current (continuous) at T c = 100 o C D r a i n Current (pulsed) T o t a l Dissipation at T c = 25 o C D e r a t i n g Factor P e a k Diode Recovery voltage slope S t o r a g e Temperature M a x . Operating Junction Temperature V a lu e 60 0 60 0 ± 20 2 3.9 25 12 5 1.0 3 -6 5 to 150 15 0
(1) ISD 6.2 A, di/dt 80 A/µs, VDD V(BR)DSS, Tj TJMAX
U ni t V V V A A A W W/ oC V/ n s
o o
C C
(·) Pulse width limited by safe operating area
August 1998
1/8
IRFBC40
THERMAL DATA
R t h j - c a se
R t hj -am b
R t h c- si n k Tl
T h e r m a l Resistance Junction-case Max T h e r m a l Resistance Junction-ambient Max T h e r m a l Resistance Case-sink Typ M a x i m u m Lead Temperature For Soldering Purpose
1.0 62.5 0.5 3 00
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Symbol IAR EAS P a r a m e te r A v a l a n c h e Current, Repetitive or Not-Repetitive ( p u l s e width limited by T j max) S i n g l e Pulse Avalanche Energy ( s t a r ti n g T j = 25 o C , I D = I A R , VD D = 50 V) M a x Value 6.2 5 80 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR )DSS I DS S IGSS Pa ra m e te r D r a i n - s o u rc e B r e a k d o w n Voltage T e s t Conditions I D = 250 µA VG S = 0 Min. 600 1 50 ± 100 Typ. Ma x. Unit V µA µA nA
Z e r o Gate Voltage V D S = Max Rating D r a i n Current (V GS = 0) V D S = Max Rating G a t e - b o d y Leakage C u r r e n t (V D S = 0) V G S = ± 20 V
T c = 125 C
o
ON ()
Symbol V GS(t h) R DS ( on) ID ( o n ) Pa ra m e te r G a t e Threshold Voltage S t a t i c Drain-source On Resistance V D S = VG S V G S = 10V T e s t Conditions ID = 250 µA I D = 3.7 A 6.2 Min. 2 Typ. 3 1.0 Ma x. 4 1.2 Unit V A
O n State Drain Current V D S > I D ( o n ) x R D S ( o n ) m a x V G S = 10 V
DYNAMIC
Symbol g f s () C is s C o ss C r ss Pa ra m e te r Forward Transconductance I n p u t Capacitance O u t p u t Capacitance R e v e r s e Transfer C a p a c it a n c e T e s t Conditions V D S > I D (on) x R D S(on) max V D S = 25 V f = 1 MHz I D = 3.7 A VG S = 0 Min. 4.7 1300 180 15 Typ. Ma x. Unit S pF pF pF
2/8
IRFBC40
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Qgs Qgd Pa ra m e te r T u r n - o n Time R i s e Time T o t a l Gate Charge G a t e - S o u r c e Charge G a t e - D r a in Charge T e s t Conditions V D D = 300 V I D = 3.6 A R G = 4.7 V G S = 10 V ( s e e test circuit, figure 3) V D D = 480 V I D = 6.2 A V G S = 10 V Min. Typ. 18 8 38 9.9 13.3 50 Ma x. Unit ns ns nC nC nC
SWITCHING OFF
Symbol t r( Voff) tf tc Pa ra m e te r O f f - vo lt a g e Rise Time F a l l Time C r o s s - o v e r Time T e s t Conditions V D D = 480 V I D = 6.2 A R G = 4.7 V G S = 10 V ( s e e test circuit, figure 5) Min. Typ. 8 5 15 Ma x. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD I S DM (· ) V S D () t rr Q rr I RR M Pa ra m e te r S o u r c e - d r a in Current S o u r c e - d r a in Current (pulsed) F o r w a r d On Voltage R e v e r s e Recovery Time R e v e r s e Recovery C h a rg e R e v e r s e Recovery Current I S D = 6.2 A VGS = 0 530 4.5 17 I S D =6.2 A di/dt = 100 A/µs o V D D = 100 V T j = 150 C ( s e e test circuit, figure 5) T e s t Conditions Min. Typ. Ma x. 6.2 25 1.6 Unit A A V ns µC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
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