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Part: IRF740
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 400V 0.46 Ohm 10A TO-220 Powermesh ii MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download IRF740 datasheet File size : 181 kB
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Datasheet text preview:
IRF740
N-CHANNEL 400V - 0.46 - 10A TO-220 PowerMESHTMII MOSFET
TYPE IRF740
s s s s s
VDSS 400 V
RDS(on) < 0.55
ID 10 A
TYPICAL RDS(on) = 0.46 EXC EPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VER Y LOW INTR INSIC CAPACITAN CES
1
3 2
TO- 2 2 0 DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS s UP S A ND MO TO R CO NTRO L
s
ABSOLUTE MAXIMUM RA TINGS
Symbol VDS VD G R V GS ID ID ID M ( ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 4 00 4 00 ± 20 10 6.3 40 1 25 1.0 4.0 65 to 150
(1)ISD 10A, di/dt 120A/µs, VDD V(BR)DSS, Tj TJMAX.
Unit V V V A A A W W/°C V/ns °C
(q ) Pulse width limited by safe operating area Note: NEW DATASHEET ACCORDING TO PCN DSG/CT /2C14. SPECIAL MARKING: IRF740 @
April 2003
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IRF740
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 62.5 300 °C/W °C/W °C
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 10 520 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±20V Min. 400 1 50 ±100 Typ. Max. Unit V µA µA nA
ON ( 1 )
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 5.3 A Min. 2 Typ. 3 0.46 Max. 4 0.55 Unit V
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 6 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 7 1259 206 25.6 Max. Unit S pF pF pF
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IRF740
ELECTRICAL CHARACTERISTICS (CONTINUED) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 200V, ID = 5 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 320V, ID = 10.7 A, VGS = 10V Min. Typ. 17 10 35 11 12 43 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Vclamp = 320V, ID = 10 A RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 10 10 17 Max. Unit ns ns ns
SOURCE DR AIN DIODE
Symbol ISD ISDM (2) VSD (1) tr r Q rr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A, VGS = 0 ISD = 10 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 370 3.2 17 Test Conditions Min. Typ. Max. 10 40 1.6 Unit A A V ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
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