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Part: IRF640S
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 200V - 0.150 Ohm -18A TO-263 Mesh Overlay MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download IRF640S datasheet File size : 112 kB
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Datasheet text preview:
®
IRF640S
N - CHANNEL 200V - 0.150 - 18A TO-263 MESH OVERLAYTM MOSFET
TYPE I R F 6 40 S
s s s s
V DS S 20 0 V
R DS ( on ) < 0.18
ID 18 A
TYPICAL RDS(on) = 0.150 EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1
DESCRIPTION This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources.
D2PAK TO-263 (suffix "T4")
APPLICATIONS HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S y mb o l V DS V DG R VGS ID ID I DM (· ) Ptot dv / d t (1 ) Ts t g Tj P a r am e t er D r a in - s o ur c e Voltage (V G S = 0) D r a in - gate Voltage (R GS = 20 k) G a t e -s o u rc e Voltage D r a in Current (continuous) at T c = 25 o C D r a in Current (continuous) at T c = 100 C D r a in Current (pulsed) T o t a l Dissipation at T c = 25 o C D e r a ti n g Factor P e a k Diode Recovery voltage slope S t o ra g e Temperature M a x . Operating Junction Temperature
o
Va l u e 20 0 20 0 ± 20 18 11 72 12 5 1. 0 5 - 6 5 to 150 15 0
(1) ISD 18A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
U n it V V V A A A W W /o C V /n s
o o
C C
(·) Pulse width limited by safe operating area
September 1999
1/8
IRF640S
THERMAL DATA
3.12 R t h j - c a se R t hj -amb R t h c - si n k Tl T h e r m al Resistance Junction-case Max T h e r m al Resistance Junction-ambient Max T h e r m al Resistance Case-sink Typ M a x i m um Lead Temperature For Soldering Purpose 1.0 6 2. 5 0. 5 30 0
o C/W oC/W o C/W o C
AVALANCHE CHARACTERISTICS
S ym b o l IA R EAS P a ra m e t er A v a la n c h e Current, Repetitive or Not-Repetitive ( p u ls e width limited by T j max) S i n gl e Pulse Avalanche Energy ( s t a rt i ng T j = 25 o C , I D = I A R , V D D = 50 V) M a x Value 18 28 0 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
S ym b o l V (BR )D SS ID SS IG S S P a r am e t e r D r a in - s o ur c e B r e ak d o w n Voltage T e s t Conditions I D = 250 µA V GS = 0 Min. 200 1 10 ± 100 T yp . Max. U n it V µA µA nA
Z e r o Gate Voltage V D S = Max Rating D r a in Current (V G S = 0) V D S = Max Rating G a t e -b o d y Leakage C u r re n t (V D S = 0) V GS = ± 20 V
T c = 125 o C
ON ()
S ym b o l V GS(t h) R D S(on) I D(o n) P a r am e t e r G a t e Threshold Voltage V D S = V G S S t a t ic Drain-source On R e s i s ta n c e V GS = 10V T e s t Conditions I D = 250 µA ID = 9 A 18 Min. 2 T yp . 3 0 .1 5 Max. 4 0.18 U n it V A
O n State Drain Current V D S > I D ( o n ) x R D S ( o n ) m a x V GS = 10 V
DYNAMIC
S ym b o l g f s () C i ss C os s C r ss P a r am e t e r F o r w ar d T r a n sc o n d uc t a n c e I n p ut Capacitance O u t p ut Capacitance R e v e rs e Transfer C a p a c it a n ce T e s t Conditions V DS > I D(o n) x R D S (on )max V D S = 25 V f = 1 MHz ID = 9 A VG S = 0 Min. 3 T yp . 4 1 20 0 20 0 60 1560 260 80 Max. U n it S pF pF pF
2/8
IRF640S
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
S ym b o l t d(on ) tr Qg Qgs Qgd P a r am e t e r T u r n -o n Time R i s e Time T o t a l Gate Charge G a t e -S o u rc e Charge G a t e -D r a in Charge T e s t Conditions V D D = 100 V I D = 9 A R G = 4.7 V GS = 10 V (s e e test circuit, figure 3) V D D = 160 V ID = 18 A V G S = 10V Min. T yp . 13 27 55 10 21 Max. 17 35 72 U n it ns ns nC nC nC
SWITCHING OFF
S ym b o l tr ( V o f f ) tf tc P a r am e t e r O f f - vo l t ag e Rise Time F a l l Time C r o s s -o v e r Time T e s t Conditions V D D = 160 V I D = 18 A R G = 4.7 VG S = 10 V (s e e test circuit, figure 5) Min. T yp . 21 25 50 Max. 27 32 65 U n it ns ns ns
SOURCE DRAIN DIODE
S ym b o l IS D I S DM (· ) V S D () t rr Q rr I R RM P a r am e t e r S o u rc e - d ra i n Current S o u rc e - d ra i n Current ( p u ls e d ) F o r w ar d On Voltage R e v e rs e Recovery Time R e v e rs e Recovery C h a r ge R e v e rs e Recovery C u r re n t I S D = 18 A VGS = 0 24 0 1. 8 15 I S D = 18 A di/dt = 100 A/µs V D D = 50 V T j = 150 o C (s e e test circuit, figure 5) T e s t Conditions Min. T yp . Max. 18 72 1.5 U n it A A V ns µC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
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