|
|
Part: IRF540FI
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: N-channel Enhancement Mode Power MOS Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download IRF540FI datasheet File size : 182 kB
Request For quote: Find where to buy IRF540FI
Datasheet text preview:
IRF540 IRF540FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
T YP E I RF 540 I RF 540F I
s s s s s s s
VD S S 100 V 100 V
R DS ( o n ) < 0 . 077 < 0 . 077
ID 30 A 16 A
TYPICAL RDS(on) = 0.045 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220
3 1 2
1 2
3
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ISOWATT220
I NTERNAL SCHEMATIC DI AGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb o l VD S V DG R VG S ID ID ID M( ·) P tot V I SO Tstg Tj Pa r a m e t e r I RF 54 0 D r ain - s our c e Vo lt a ge ( V G S = 0) D r ain - g at e V ol ta ge ( R GS = 20 k ) G a t e- s ou r c e V olt a ge D r ain C ur r ent ( c ont . ) at Tc = 25 C D r ain C ur r ent ( c ont . ) at Tc = 10 0 oC D r ain C ur r ent ( puls ed ) T o t a l D i s s i p a t i o n a t Tc = 2 5 C D er at in g F ac t or I ns ulat io n W it h s t and V olt ag e ( DC ) S t or a ge T e m per at ur e M ax . O per at in g J un c t io n T em p era t ur e
o o
Va l u e I RF 540F I 1 00 1 00 ± 20 30 21 120 150 1 - 6 5 t o 175 1 75 16 11 120 45 0 .3 2000
Un i t V V V A A A W W /oC V
o o
C C
(·) Pulse width limited by safe operating area
July 1993
1/9
IRF540/FI
THERMAL DATA
T O - 2 20 R thj-cas e Rt h j - a mb R th c - s Tl T h e r ma l R e s i s t a n c e J u n c t i o n - c a s e M ax 1 6 2. 5 0. 5 30 0 I S O W A T T 220 3. 33
o o o
C/ W C/ W C/ W o C
T her ma l Res is t anc e J unc t ion - am bie nt M ax T her ma l Res is t anc e Cas e - s i nk T yp M ax im um Le ad T em pe r at ur e F or So lder in g P ur p os e
AVALANCHE CHARACTERISTICS
S ymb o l IA R E AS EA R IA R P a ra met er A v alanc h e Cu r r ent , R ep et i ti v e or No t- R ep et it iv e ( p uls e w id t h lim it ed by T j m ax , < 1% ) S i ngle P ul s e A v al an c he E ner gy ( s t ar t i ng T j = 25 o C , ID = I A R, VD D = 25 V ) R epet it iv e A v al an c he E n erg y ( p uls e w id t h lim it ed by T j m ax , < 1% ) A v alanc h e Cu r r ent , R ep et i ti v e or No t- R ep et it iv e ( T c = 100 o C, puls e wid th l im it ed b y T j m ax , < 1% )
o
M ax V al u e 30 20 0 50 21
Uni t A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
S ymb o l V( B R ) D S S IDS S IG S S P aram et er D r ain - s our c e B r eak d own Vo lt a ge T e st Co n d i t i o n s I D = 25 0 µ A VG S = 0 Mi n . 100 250 1000 ± 10 0 Typ. M ax. Unit V µA µA nA
Z er o G at e V olt age V D S = M a x R at ing D r ain C ur r ent ( V G S = 0) V D S = M a x R at ing x 0 . 8 G a t e- bo dy Leak a ge C ur r e nt ( V D S = 0 ) V G S = ± 20 V
T c = 1 2 5 oC
ON ( )
S ymb o l V G S( t h ) RDS( on) ID( on) P aram et er G a t e T hr es ho ld V olt ag e V D S = V GS S t at ic Dr ain- s our c e O n R es is t anc e O n S t at e Dr a in C ur r e nt V G S = 1 0V T e st Co n d i t i o n s I D = 2 50 µ A ID = 1 7 A VG S = 10 V 30 Mi n . 2 Typ. 2.9 0. 04 5 M ax. 4 0. 077 Unit V A
V D S > ID ( o n ) x RD S( o n ) ma x
DYNAMIC
S ymb o l gf s ( ) C iss Coss Crss P aram et er F or w ar d T r an s c ondu c t anc e I np ut C ap ac it an c e O u t put Cap ac it an c e R ev er s e T r a ns f er C apac i t anc e T e st Co n d i t i o n s V D S > ID ( o n ) x RD S( o n ) ma x V D S = 25 V f = 1 MH z ID = 1 7 A VG S = 0 Mi n . 10 Typ. 18 16 00 4 60 1 40 2100 600 200 M ax. Unit S pF pF pF
2/9
IRF540/FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD
S ymb o l td(on) tr td(off ) tf Qg Qgs Qgd P aram et er T ur n - on T im e R is e T i m e T ur n - of f Delay T im e F all T im e T ot al G at e C ha r ge G a t e- S our c e Ch ar ge G a t e- Dr a in Ch ar ge T e st Co n d i t i o n s V D D = 5 0 V ID = 5 A VG S = 10 V R i = 50 ( s e e t e s t c ir c ui t) I D = 30 A V G S = 10 V V D D = M ax R at ing x 0. 8 ( s e e t e s t c ir c ui t) Mi n . Typ. 55 1 10 2 90 1 25 55 11 26 M ax. 80 160 410 180 80 Unit ns ns ns ns nC nC nC
SOURCE DRAIN DIODE
S ymb o l IS D I SD M( · ) VS D ( ) trr Qrr P aram et er S o ur c e - dr ain C ur r e nt S o ur c e - dr ain C ur r e nt ( p uls e d) F or w ar d O n V olt age R ev er s e Rec ov er y T im e R ev er s e Rec ov er y C har ge ISD = 30 A VG S = 0 1 40 0.7 I S D = 3 0 A d i/ dt = 10 0 A / µ s T j = 1 50 o C VD D = 50 V T e st Co n d i t i o n s Mi n . Typ. M ax. 30 120 1. 6 Unit A A V ns µC
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Package
Safe Operating Area for ISOWATT220 Package
3/9
Others parts begin by ir
IR-1 IR-2 IR-3 IR-4 IR-5 IR-6 IR-7 IR-8 IR-9 IR-10 IR-11 IR-12 IR-13 IR-14 IR-15 IR-16 IR-17 IR-18 IR-19 IR-20 IR-21 IR-22 IR-23 IR-24 IR-25 IR-26 IR-27 IR-28 IR-29 IR-30 IR-31
|
|
|
