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Part: IRF540
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Low Voltage
Description: N-channel 100V - 0.055 Ohm - 22A TO-220 Low Gate Charge StripFET ii Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download IRF540 datasheet File size : 182 kB
Request For quote: Find where to buy IRF540
Datasheet text preview:
N-CHANNEL 100V - 0.055 - 22A TO-220 LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE IRF540
s s s s s
IRF540
VD S S 100 V
RDS(on) <0.077
ID 22 A
TYPICAL RDS(on ) = 0.055 EXC EPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION
TO-220
3 1 2
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH-E FF ICIE NCY DC-DC CONVERTERS s UP S AND MOTOR CONTROL
Ordering Information
SALES TYPE
MARKING IRF540& TO-220
PACKAGE TU B E
PACKAGING
IRF 540
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DG R VGS ID ID IDM(·) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 22 15 88 85 0.57 9 220 -55 to 175
1) ISD 22A, di/dt 300A/µs, VDD V (BR)DSS, T j T JMAX (2) Starting T j = 25 oC, ID = 12A, VDD = 30V
Unit V V V A A A W W/°C V/ns mJ °C
(·) Pulse width limited by safe operating area.
February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
1/8
IRF540
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.76 62.5 300 °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20V Min. 100 1 10 ±100 Typ. Max. Unit V µA µA nA
IGSS
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 11 A Min. 2 Typ. 3 0.055 Max. 4 0.077 Unit V
DYN AMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =25 V ID = 11 A Min. Typ. 20 870 125 52 Max. Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
2/8
IRF540
ELECTRICAL CHARACTERISTICS (continued) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 12 A VDD = 50 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 80 V ID= 22 A VGS= 10V Min. Typ. 60 45 30 6 10 41 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 12 A VDD = 50 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 50 20 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (·) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22 A VGS = 0 100 375 7.5 Test Conditions Min. Typ. Max. 22 88 1.3 Unit A A V ns nC A
di/dt = 100A/µs ISD = 22 A VDD = 30 V Tj = 150°C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (·)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
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