|
|
Part: DB-915-12W
Category:
RF & Microwaves
-> Transistors
-> FETs
-> LDMOS
-> Demo Boards->Power
Description: 12W / 12V / 875-915 MHZ pa Using 1X PD55015S
Company: ST Microelectronics, Inc.
Datasheet: Download DB-915-12W datasheet File size : 373 kB
Request For quote: Find where to buy DB-915-12W
Datasheet text preview:
DB-915-12W
12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY
PRELIMINARY DATA
N-CHAN NEL ENHANCEMENT-MODE LATERAL MOSFETs · EXC ELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 12 W min. with 12 dB gain over 875 - 915 MHz · 10:1 LOAD VSWR CAPABILITY · BeO FREE AMPLIFIER.
DESCRIPTION The DB-915-12W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed as booster for GSM-R applications. The DB-915-12W is designed in cooperation with Européenne de Télécommunications S.A (www.etsa.fr), for high gain and broadband performance operating in common source mode at 12 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc.
ORDER CODE DB-915-12W
MECHANICAL SPECIFICATION L=60 mm W=30 mm H=10 mm
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol V DD ID PDISS TCASE Tamb Supply voltage Drain Current Power Dissipation at TCASE = +85 °C Operating Case Temperature Max. Ambient Temperature Parameter Value 18 4.5 67 -20 to +85 +55 Unit V A W
oC o
C
November, 20 2002
1/5
DB-915-12W
ELECTRICAL SPECIFICATION (Tamb = +25 oC, Vdd = 26 V, Idq = 150 mA)
Symbol FREQ. Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 12 W Over frequency range: 875 - 915 MHz Over frequency range and @ POUT = 12 W POUT from 0.1 W to 60 W P1dB Input return Loss POUT from 0.1 W to 12W POUT = 12 W Load Mismatch all phases @ POUT = 12 W 10:1 VSWR all phases and POUT from 0.1 to 12 W POUT = 12 WPEP 10:1 -76 -25 dBc dBc 45 50 -6 -30 Test Conditions Min. 875 11 12 12 +/- 0.5 1 Typ. Max. 915 Unit MHz dB W dB dB % dB dBc
2/5
DB-915-12W
TYPICAL PERFORMANCE Power Gain vs. Frequency
16
Output Power vs. Frequency
24 22 20
15
14
P in = 25 dBm
18 16 Pout (W) 14 12 10
P in = 31 dB m
13 Gp (dB)
12
P in = 28 dBm
11 P in = 31 dB m 10 V c c = 12.5 V Id q = 150 m A
P in = 28 dB m
8 6 P in = 25 dB m 4 Vc c = 12.5 V Id q = 150 m A 8 65 87 5 885 8 95 f (MHz ) 90 5 915 92 5
9
8 86 5 87 5 8 85 895 f (MHz) 90 5 91 5 9 25
2
Drain Current vs. Frequency
4 .0
Input Return Loss vs. Frequency
0
3 .5
-2
3 .0 P in = 31 dB m 2 .5
-4
-6 RL (dB)
P in = 31 dB m
Id (A)
2 .0
P in = 28 dB m
-8 P in = 25 dB m
1 .5 P in = 25 dB m 1 .0
- 10
- 12 P in = 28 dB m
0 .5
Vc c = 12.5 V Id q = 150 m A 8 65 8 75 8 85 8 95 f (MHz) 905 9 15 9 25
- 14
Vc c = 12.5 V Id q = 150 m A 86 5 8 75 8 85 89 5 f (MHz) 9 05 9 15 92 5
0.0
-16
Output Power vs. Frequency
18
16
14 V d d = 15.6 V 12 Pout (W) Vd d = 12.5 V
10
V d d = 10.8 V
8
6
4
P i n = 28 dB m Id q = 150 m A
2 865 875 885 895 f (MHz ) 90 5 91 5 92 5
3/5
DB-915-12W
TEST FIXTURE COMPONENT LAYOUT
TEST CIRCUIT PHOTOMASTER
TEST CIRCUIT COMPONENT PART LIST
R e f.
1 CV 1, C V2 C4 C 10 C 12 C 5 , C 7 , C 9 C13 C 6, C 8 C3 C2 C1 R1 R2 P1 D1 T1 B O AR D
V alu e
R F Pow e r Am p l if i e r Circuit T ri m cap a c it o r HQ 0.6 -4 . 5 p F 500 V C h ip Capa c it o r H Q 060 3 100p F TA 5% 5 0 V C h i p Cap a c i t o r HQ 5 . 6 p F TB +/- 0,25pF 5 0 0 V C h i p Cap a c i t o r HQ 4 . 7 p F TB +/- 0,25pF 5 0 0 V C h ip Capa c it o r HQ 10 p F TB 5% 500V C h ip Capa c it o r HQ 47 p F TB 5% 500V C h ip Capa c it o r HQ 100 p F TB 5 % 500V C a p a c it o r 1206 10 0 n F 63V X7R 1 0 % C a p a c it o r CM S tantale 1µ F 20% 35 V R e s is t o r C M S 4 , 7 K 1206 1 / 4 W 5% R e s is t o r CM S 10K 1206 1/4W 5% T ri m resistor CM S ce rm e t 3224W 10 K Z e n e r Diode 5 . 1 V 500m W SOD 8 0 R F LDM O S Transistor 12V 15W T E F L O N - G L A S S Er = 2.55 , THK = 0.762 m m , C O P P E R FLANGE 2 m m THIC K N E S S
R e f . Manu f a c t u re r
P C IR 5 0 1 0 0 3 A T27273 5 0 0 -C H A - 1 0 1 - J V L E 5 0 1 -C H B - 3 R 3 - C V L E 5 0 1 -C H B - 8 R 2 - C V L E 5 0 1 -C H B - 1 0 0 - J V L E 5 0 1 -C H B - 4 7 0 - J V L E 5 0 1 -C H B - 1 0 1 - J V L E V J 1 2 0 6 Y 1 0 4 K X A T /6 3 0 293 D105X 903 5B 27597 27605 3 2 2 4 W -1 0 3 BZ V 55C 5V1 PD5 5 0 1 5 S M X 3 -3 0 - C 1 / 1 0 C
M a n u fa c tu re r
E T SA TECK T E K ELE C T E K ELE C T E K ELE C T E K ELE C T E K ELE C T E K ELE C V IS H A Y V i s h a y -S p r a g u e BOUR NS BOUR NS BOUR NS O M N IT E C H S T M i c ro é l e c t r o n i c s M E TCLA D
4/5
DB-915-12W
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http ://www.st.com
5/5
Others parts begin by db
|
|
|
