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Part: DB-900-80W
Category:
RF & Microwaves
-> Transistors
-> FETs
-> LDMOS
-> Demo Boards->Power
Description: 80W / 26V / 869-894 MHZ pa Using 2X PD57045S
Company: ST Microelectronics, Inc.
Datasheet: Download DB-900-80W datasheet File size : 373 kB
Request For quote: Find where to buy DB-900-80W
Datasheet text preview:
DB-900-80W
80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY
PRELIMINARY DATA
RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs · EXC ELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 80 W min. with 13 dB gain over 869-894 MHz · 10:1 LOAD VSWR CAPABILITY · BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CD MA / 9ch FWD Pout = 14W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.98 MHz) : -60 dBc DESCRIPTION The DB-900-80W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. The DB-900-80W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC)
Symbol V DD ID PDISS TCASE Pamb Supply voltage Drain Current Power dissipation at Tcase = +85°C Operating Case Temperature Max. Ambient Temperature Parameter Value 32 9 135 -20 to +85 +55 Unit V A W
o o
ORDER CODE DB-900-80W
MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm
C C 1/6
November, 20 2002
DB-900-80W
ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA)
Symbol FREQ. Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 80 W Over frequency range: 869 - 894 MHz Over frequency range and @ POUT = 80 W POUT from 0.1W to 80 W P1dB Input return Loss POUT from 0.1W to 80 W POUT = 80 W Load Mismatch all phases @ POUT = 80 W 10:1 VSWR all phases and POUT from 0.1 to 80W POUT = 80 WPEP 10:1 -76 -25 dBc dBc 45 50 -20 -40 -15 -30 Test Conditions Min. 869 13 80 14 90 +/- 0.5 1 Typ. Max. 894 Unit MHz dB W dB dB % dB dBc
TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 300mA)
Fre que ncy Pout CH PWR Pi n CH PWR Pout CH PWR ACPR -750 KHz ACPR + 750 KHz ACPR -1.98 MHz ACPR + 1.98 MHz I tota l Nd
(MHz )
865 875 885 895 865 875 885 895 865 875 885 895
(W )
0.63 0.63 0.63 0.63 3.98 3.98 3.98 3.98 15.85 14.79 14.13 14.79
(dBm)
16.3 15.7 15.3 14.9 23.3 23.0 22.6 22.3 28.9 28.3 28.2 28.0
(dB m)
28.0 28.0 28.0 28.0 36.0 36.0 36.0 36.0 42.0 41.7 41.5 41.7
(dBc )
50. 5 52. 0 54. 0 55. 0 49. 0 49. 5 52. 0 52. 0 45 45 45 45
(dBc )
51.5 53.0 55.0 54.5 51.0 51.5 54.0 54.0 45 45 45 45
(dBc )
71 71 71 72 68.0 68.0 69.0 70.0 63 64 65 66
(dBc )
70 71 71 72 68.0 68.0 69.0 70.0 63 64 65 66
(A)
0.64 0.61 0.60 0.58 1.42 1.37 1.32 1.26 2.76 2.59 2.50 2.41
(% )
3. 79 3. 98 4. 04 4. 18 10.78 11.18 11.60 12.15 22.09 21.96 21.73 23.61
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DB-900-80W
TYPICAL PERFORMANCE Output Power vs. Input Power
Pout (W)
110 100 17 90 80 70
870 MHz 880 MHz
Power Gain vs. Input Power
Gp (dB)
18
16
890 MHz
900 MHz
15
880 MHz
60 50
890 MHz
14
900 MHz
870 MHz 860 MHz
40 30 20 10 0 0 1 2 3 4 5 6
Vdd = 26 V Idq = 2 x 200 mA 860 MHz
13 12 11 10 1
Vdd = 26 V Idq = 2 x 200 mA
10
100
1000
Pin (W)
Pout (W)
Power Gain vs. Frequency
Gp (dB)
18 17 16
Pout = 5 W
Efficiency vs. Frequency
Nd (%)
62 60 58 56 54
Pout = 80 W Pout = 90 W Pout = 100 W
15 14
Pout = 90 W
52 50 48 46
Vdd = 26 V Idq = 2 x 200 mA Pout = 80 W
13 12 11 10 850
44 42 40 850
Vdd = 26 V Idq = 2 x 200 mA
860
870
880
890
900
910
860
870
880
890
900
910
f (MHz)
f (MHz)
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DB-900-80W
TEST FIXTURE COMPONENT LAYOUT
CV1
CV2
Ref. ETSA c07/2000 - Ed1
TEST CIRCUIT PHOTOMASTER
Ref. ETSA c07/2000 - Ed1
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DB-900-80W
TEST CIRCUIT COMPONENT PART LIST
COMPONENT T1, T2 C1, C2, C23, C24 C3, C4 C5, C6, C17, C18 C7, C8, C9, C10, C11, C12, C13, C14 C15, C16 C19, C20 C21, C22 C26, C27 C25 CV1, CV2 P1, P2 R1,R7 R2 R3, R4 R5, R6 D1, D2 SM1, SM2 BOARD SUBSTRATE BACK SIDE CERAMIC CHIP CAPACITORS DESCRIPTION PD57045S TRANSISTOR 47pF - 500V CERAMIC CHIP CAPACITOR 4.7pF - 500V CERAMIC CHIP CAPACITOR 100pF - 500V CERAMIC CHIP CAPACITOR 10pF - 500V CERAMIC CHIP CAPACITOR 100nF - 63V CERAMIC CHIP CAPACITOR 1µF / 35V ELECTROLYTIC CAPACITOR 5.6pF - 500V CERAMIC CHIP CAPACITOR 6.8pF - 500V CERAMIC CHIP CAPACITOR 0.5pF - 500V CERAMIC CHIP CAPACITOR ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V 10K Ohms MULTITURN POTENTIOMETER 100 Ohms 1/4W 1206 SMD CHIP RESISTOR 50 Ohms 30W - 4GHz LOAD 4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR 10K Ohms 1/4W 1206 SMD CHIP RESISTOR ZENER DIODE 5V - 500 mW SOD80 90° SMD HYBRID COUPLER ANAREN Xinger 1304-3 METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35µ TEFLON-GLASS Er = 2.55 COPPER FLANGE 2 mm THICKNESS ATC100B or EQUIVALENT
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