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Part: DB-900-100W
Category:
RF & Microwaves
-> Transistors
-> FETs
-> LDMOS
-> Demo Boards->Power
Description: 100W / 26V / 869-894 MHZ pa Using 2X PD57060S
Company: ST Microelectronics, Inc.
Datasheet: Download DB-900-100W datasheet File size : 373 kB
Request For quote: Find where to buy DB-900-100W
Datasheet text preview:
DB-900-100W
100W / 26V / 869-894 MHz PA using 2x PD57060S The LdmoST FAMILY
PRELIMINARY DATA
RF POWER AMPLIFIER DEMOBOARD USING T WO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs · EXCELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 100 W min. with 13 dB gain over 869-894 MHz · 10:1 LOAD VSWR CAPABILITY · BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CDMA / 9ch FWD Pout = 20W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.98 MHz) : -60 dBc DESCRIPTION The DB-900-100W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. The DB-900-100W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC)
Symbol V DD ID PDISS TCASE Pamb Supply voltage Drain Current Power dissipation at Tcase = +85°C Operating Case Temperature Max. Ambient Temperature Parameter Value 32 12 145 -20 to +85 +55 Unit V A W
oC oC
ORDER CODE DB-900-100W
MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm
November, 20 2002
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DB-900-100W
ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA)
Symbol FREQ. Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 100 W Over frequency range: 869 - 894 MHz Over frequency range and @ POUT = 100 W POUT from 0.1W to 100 W P1dB Input return Loss POUT from 0.1W to 100 W POUT = 100 W Load Mismatch all phases @ POUT = 100 W 10:1 VSWR all phases and POUT from 0.1 to 100W POUT = 100 WPEP 10:1 -76 -25 dBc dBc 40 45 -20 -40 -15 -30 Test Conditions Min. 869 12.5 100 +/- 0.5 1 13 Typ. Max. 894 Unit MHz dB W dB dB % dB dBc
TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 350mA)
Fr equency Pout CH PWR (W) 10 10 10 20 20 20 Pout CH PWR (dBm ) 40.0 40.0 40.0 43.0 43.0 43.0 ACPR -750 KHz (dBc) 53 .4 54 .2 53 .2 45 .0 45 .1 45 .2 ACPR +750 KHz (dBc) 50 .8 51 .7 51 .7 45 .0 45 .4 45 .7 ACPR -1.9 8 MHz (d Bc) 6 7.0 6 8.6 6 9.0 6 4.0 6 4.7 6 6.8 ACPR +1.98 MHz (dBc) 67.0 68.3 69.0 64.0 64.7 66.5 3 .5 22.0 2 .5 15.4 I total (A) Nd
(MHz )
865 880 895 865 880 895
(%)
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DB-900-100W
TYPICAL PERFORMANCE Power Gain vs Output Power
Gp (dB)
18 17 16
895 MHz
Power Gain vs Frequency
Gp (dB)
18 17 16 15
15
880 MHz
Pout = 15W Pout = 100W Pout = 110W
14 13 12 11 10 1
865 MHz
14 13 12 11 10
Vdd = 26 V Idq = 2 x 200mA
Vdd = 26 V Idq = 2 x 200mA
10
100
1000
860
865
870
875
880
885
890
895
900
Pout (W)
f (MHz)
Efficiency vs Frequency
Nd (%)
60
55
50
45
Pout = 110W
40
Pout = 100W
35
Vdd = 26 V Idq = 2 x 200mA
30 860 865 870 875 880 885 890 895 900
f (MHz)
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DB-900-100W
TEST FIXTURE COMPONENT LAYOUT
CV1
CV2
Ref. ETSA c07/2000 - Ed1
TEST CIRCUIT PHOTOMASTER
Ref. ETSA c07/2000 - Ed1
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DB-900-100W
TEST CIRCUIT COMPONENT PART LIST
COMPONENT T1, T2 C1, C2, C23, C24 C3, C4, C12, C14 C5, C6, C17, C18 C7, C8, C9, C10, C11, C13 C15, C16 C19, C20 C26, C27 C21, C22 C25 CV1, CV2 P1, P2 R1,R7 R2 R3, R4 R5, R6 D1, D2 SM1, SM2 BOARD SUBSTRATE BACK SIDE CERAMIC CHIP CAPACITORS DESCRIPTION PD57060S TRANSISTOR 47pF - 500V CERAMIC CHIP CAPACITOR 6.8pF - 500V CERAMIC CHIP CAPACITOR 100pF - 500V CERAMIC CHIP CAPACITOR 10pF - 500V CERAMIC CHIP CAPACITOR 100nF - 63V CERAMIC CHIP CAPACITOR 1µF / 35V ELECTROLYTIC CAPACITOR 3.3pF - 500V CERAMIC CHIP CAPACITOR 4.7pF - 500V CERAMIC CHIP CAPACITOR 0.5pF - 500V CERAMIC CHIP CAPACITOR ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V 10K Ohms MULTITURN POTENTIOMETER 100 Ohms 1/4W 1206 SMD CHIP RESISTOR 50 Ohms 30W - 4GHz LOAD 4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR 10K Ohms 1/4W 1206 SMD CHIP RESISTOR ZENER DIODE 5V - 500 mW SOD80 90° SMD HYBRID COUPLER ANAREN Xinger 1304-3 METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35µ TEFLON-GLASS Er = 2.55 COPPER FLANGE 2 mm THICKNESS ATC100B or EQUIVALENT
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