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Part: D45H8
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: PNP Silicon Power Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download D45H8 datasheet File size : 161 kB
Request For quote: Find where to buy D45H8
Datasheet text preview:
®
D45H5 D45H8 \ D45H11
PNP SILICON POWER TRANSISTORS
s
s
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STMicroelectronics PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED
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APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The D45H5, D45H8 and D45H11 are silicon Multi-Epitaxial Planar PNP transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D45H8, D45H11 are complementary with D44H8, D44H11.
1 2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CE O VEBO IC ICM IB P tot Tstg Tj Parameter D45 H5 C o l l e c t o r- E m i tt e r Voltage (I B = 0) E m i t te r- B a s e Voltage (I C = 0) C o l l e c t o r Current C o l l e c t o r Peak Current B a s e Current T o t a l Dissipation at T c 25 C S t o r a g e Temperature M a x . Operating Junction Temperature
o
Value D45H8 -6 0 -5 -10 -20 -5 50 - 6 5 to 150 150 D45H11 -80 -4 5
U ni t V V A A A W
o o
C C
February 2003
1/5
D45H5/D45H8/D45H11
THERMAL DATA
R t h j - c a se T h e r m a l Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol IC BO IEBO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (I E = 0) E m i t t e r Cut-off Current ( I C = 0) T e s t Conditions V C B = rated V C E O V E B = -5V I C = -100 mA f o r D45H5 f o r D45H8 f o r D45H11 I C = -8 A I C = -8 A I C = -8 A I C = -2 A I C = -4 A I B = -0.4 A I B = -0.8 A I B = -0.8 A V C E = -1 V V C E = -1 V 60 40 120 70 Min. Typ. Ma x. -1 0 -100 Unit µA µA
V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage ( I B = 0) V C E(s at ) V B E (s at ) hFE C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r S a t u r a t io n Voltage D C Current Gain
-45 -60 -80 -1 -1 -1 .5
V V V V V
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Safe Operating Area
Derating Curves
2/5
D45H5/D45H8/D45H11
DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/5
D45H5/D45H8/D45H11
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
4/5
D45H5/D45H8/D45H11
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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Others parts begin by d4
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