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Part: AM1517-012
Category:
RF & Microwaves
-> Transistors
-> Power Transistors
-> 1.6 GHz Satcom Transistors
Description: Satellite Communications Applications RF & Microwave Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download AM1517-012 datasheet File size : 42 kB
Request For quote: Find where to buy AM1517-012
Datasheet text preview:
AM1517-012
R F & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS
. . . . . . .
REF RACTO RY/G OL D METALLIZATION EM IT TER SITE BALLASTED :1 VSWR CAPABILITY L O W THERMAL RESISTANCE I NPUT/OUTPUT MATCHING M ETAL /CERAM IC HERMETIC PACKAGE PO UT = 12 W MIN. WITH 8.5 dB GAIN
.4 00 x .400 2NLFL (S042) hermeticallysealed O R D E R CODE AM1517-012 BR AN DI NG 1517-12
P I N CONNECTION D ES C R I PT I O N The AM1517-012 power transistor is designed specifically for Satellite communications applications in the 1.5 - 1.7 GHz frequency range. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR :1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a Refractory/Gold metallization system. The AM1517-012 is supplied in the AMPACTM Hermetic/Ceramic package with internal Input/Output matching structures. A B SO L U T E MAXIMUM RATINGS (T c as e = 25 ° C )
S ym b o l P a ra m e t er V al u e Un it 1. Collector 2. Base 3. Emitter 4. Base
PDI SS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC 100°C)
27 1.25 30 200 - 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature Storage Temperature
T H E RM A L DATA RTH(j-c) Junction-Case Thermal Resistance* 5. 5 °C/W
*Applies only to rated RF amplifier operation
September 1992
1/6
A M 1 5 17 -0 1 2
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C ) STATIC
S ym b o l T e st Conditions V a lue Mi n . Ty p. M a x. U ni t
BVCBO BVEBO ICBO hFE
IC = 4mA IE = 4mA VCB = 28V VCE = 5V
IE = 0mA IC = 0mA IC = .8A
45 3.0 -- 15
-- -- -- --
-- -- 1 150
V V mA --
DYNAMIC
S ym b o l T es t Conditions V al u e M i n. T yp . M ax . Uni t
POUT c GP
N ote:
f = 1.5 -- 1.7GHz f = 1.5 -- 1.7GHz f = 1.5 -- 1.7GHz = 1550 = 1660 = 1675
PIN = 1.7W PIN = 1.7W PIN = 1.7W
VCC = 28V VCC = 28V VCC = 28V
12 55 8.5
13 58 --
-- -- --
W % dB
A M 1 5 1 7 series vary P I N to achieve P O U T ; performance guaranteed in 50 MHz increments. A l p h a - S u f f i x added to AM1517 P/N designates band segment. A - 15 00 M - 16 20 S - 16 25 MHz MHz MHz
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A M 15 1 7 -0 12
TYPICAL PERFORMANCE TYPI CAL PERFORMANCE vs DRIVE POWER POWER OUTPUT vs TEM P E R A TU R E
COLLECT OR EFFICIENCY vs TEM P E R A TU R E
TYPICAL PERFORMANCE vs VO LTAG E @ FIXED DRIVE
GAIN vs TEMPERATURE
3/6
A M 1 5 17 -0 1 2
I M PE D A NC E DATA
TYPICAL INPUT IM PEDANCE
ZIN
POUT = 12 W VCC = 28 V ZO = 50 ohms
FREQ. L = 1.50 GHz M = 1.60 GHz H = 1.70 GHz
ZIN () 13.0 + j 13.5 13.0 + j 12.0 14.5 + j 12.5
ZCL () 11.5 + j 5.0 10.5 + j 2.2 9.5 - j 1.5
TYPICAL COLLECTOR LO AD IMPEDANCE
ZCL
POUT = 12 W VCC = 28 V ZO = 50 ohms
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A M 15 1 7 -0 12
T E S T CIRCUIT
All dimensions are in inches.
PACKAGE MECHANICAL DATA
5/6
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