|
|
Part: AM1214-300
Category:
RF & Microwaves
-> Transistors
-> Power Transistors
-> L-Band Radar Transistors
Description: L-band Radar Applications RF & Microwave Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download AM1214-300 datasheet File size : 42 kB
Request For quote: Find where to buy AM1214-300
Datasheet text preview:
AM1214-300
. . . . . . . .
R F & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
REF RACTO RY/G OL D METALLIZATION EM IT TER SITE BALLASTED 5 :1 VSWR CAPABILITY L O W THERMAL RESISTANCE I NPUT/OUTPUT MATCHING O VERL AY GEOMETRY M ETAL /CERAM IC HERMETIC PACKAGE PO UT = 270 W MIN. WITH 6.3 dB GAIN
. 4 00 x .500 2LFL (S038) hermetically sealed O R D E R CODE AM1214-300 B RA ND IN G 1214-300
D ES C R I PT I O N The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-300 is supplied in the BIGPACTM Herm e t i c Metal/Ceramic package with internal Input/Output matching structures. A B SO L U T E MAXIMUM RATINGS (T c as e = 25 ° C )
S ym b o l P a ra m e t er
P I N CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
V al u e
U ni t
PDI SS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC 100°C)
730 18. 75 55 250 - 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
T H E RM A L DATA RTH(j-c) Junction-Case Thermal Resistance* 0.24 °C/W
*Applies only to rated RF amplifier operation
September 1992
1/6
A M 1 2 14 -3 0 0
ELECTRICAL SPECIFICATIONS (T c a s e = 25 ° C ) STATIC
S ym b o l T e st Conditions V a lue Mi n . Ty p. M a x. U ni t
BVCBO BVEBO BVCES I C ES hFE
IC = 50mA IE = 15mA IC = 50mA VCE = 50V VCE = 5V
IE = 0mA IC = 0mA
65 3.0 65 --
-- -- -- -- --
-- -- -- 30 --
V V V mA --
IC = 5A
10
DYNAMIC
S ym b o l T es t Conditions V al u e M i n. T yp . M ax . Uni t
POUT c GP
N ote:
f = 1235 -- 1365MHz f = 1235 -- 1365MHz f = 1235 -- 1365MHz = =
5 0 µS e c 4%
PIN = 63W PIN = 63W PIN = 63W
VCC = 50V VCC = 50V VCC = 50V
270 40 6.3
300 45 6. 8
-- -- --
W % dB
P u l s e Width D u t y Cycle
2/6
A M 12 1 4 -3 00
TYPICAL PERFORMANCE
TYPICAL BROADBAND POWER AMPLIFIER
RELATI VE POWER OUTPUT & COLLECT OR EFFICIENCY vs COLLECT OR VOLTAGE
M AXIM UM THERMAL RESISTANCE vs PULSE WIDTH & PULSE CYCLE
3/6
A M 1 2 14 -3 0 0
I M PE D A NC E DATA
TYPICAL INPUT I MP E D A N C E
ZIN
PIN = 63 W VCC = 50 V Z0* = 50 ohms
FREQ. L = 1235 MHz M = 1300 MHz H = 1365 MHz
ZIN () 2.5 + j 5.0 1.5 + j 3.5 1.0 + j 3.5
ZCL () 2.0 - j 2.5 2.5 - j 2.5 2.0 - j 3.0
TYPICAL COLLECTOR LO AD IMPEDANCE
ZCL
PIN = 63 W VCC = 50 V Z0* = 50 ohms
*Normalized Impedance
4/6
A M 12 1 4 -3 00
T E S T CIRCUIT Ref.: Dwg. No. C125510
PACKAGE MECHANICAL DATA
5/6
Others parts begin by am
AM-1 AM-2 AM-3 AM-4 AM-5 AM-6 AM-7 AM-8 AM-9 AM-10 AM-11 AM-12 AM-13 AM-14 AM-15 AM-16 AM-17 AM-18 AM-19 AM-20 AM-21 AM-22 AM-23 AM-24 AM-25 AM-26 AM-27 AM-28 AM-29 AM-30 AM-31 AM-32 AM-33 AM-34 AM-35 AM-36 AM-37 AM-38 AM-39 AM-40 AM-41 AM-42 AM-43 AM-44 AM-45 AM-46 AM-47 AM-48 AM-49 AM-50 AM-51 AM-52 AM-53 AM-54 AM-55 AM-56 AM-57 AM-58 AM-59 AM-60 AM-61 AM-62 AM-63 AM-64 AM-65 AM-66 AM-67 AM-68 AM-69 AM-70 AM-71 AM-72 AM-73 AM-74 AM-75 AM-76 AM-77 AM-78 AM-79 AM-80 AM-81 AM-82 AM-83 AM-84 AM-85 AM-86 AM-87 AM-88 AM-89 AM-90 AM-91 AM-92 AM-93 AM-94 AM-95 AM-96 AM-97 AM-98 AM-99 AM-100 AM-101 AM-102 AM-103 AM-104 AM-105
|
|
|
