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Part: AM1214-200

Category:
 RF & Microwaves
   -> Transistors
     -> Power Transistors
             -> L-Band Radar Transistors

Description: L-band Radar Applications RF & Microwave Transistors

Company: ST Microelectronics, Inc.

Datasheet: Download AM1214-200 datasheet     File size : 42 kB

Request For quote: Find where to buy AM1214-200



Datasheet text preview:
AM1214-200
R F & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS

. . . . . . .

PRELIMINARY DATA

REF RACTO RY/G OL D METALLIZATION EM IT TER SITE BALLASTED L O W THERMAL RESISTANCE I NPUT/OUTPUT MATCHING O VERL AY GEOMETRY M ETAL /CERAM IC HERMETIC PACKAGE PO UT = 200 W MIN. WITH 7.0 dB GAIN

. 4 00 x .500 2LFL (M205) hermetically sealed O R D E R CODE B RA ND IN G 1214-200 AM1214-200

P I N CONNECTION D ES C R I PT I O N The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM1214-200 is supplied in the BIGPACTM hermetic metal/ceramic package with internal input/output matching structures. A B SO L U T E MAXIMUM RATINGS (T c as e = 25 ° C )
S ym b o l P a ra m e t er V al u e U ni t 1. Collector 2. Base 3. Emitter 4. Base

PDI SS IC VCC TJ TSTG

Power Dissipation* Device Current*

(TC 100°C)

575 16 40 250 - 65 to +200

W A V °C °C

Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature

T H E RM A L DATA RTH(j-c) Junction-Case Thermal Resistance* 0.26 °C/W

*Applies only to rated RF amplifier operation

September 1992

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A M 1 2 14 -2 0 0
ELECTRICAL SPECIFICATIONS (T c a s e = 25 ° C ) STATIC
S ym b o l T e st Conditions Va l u e M in. T yp . M ax . U ni t

BVCBO BVEBO BVCES I C ES hFE DYNAMIC
S ym b o l

IC = 50mA IE = 30mA IC = 50mA VBE = 0V VCE = 5V

IE = 0mA IC = 0mA VBE = 0V VCE = 40V IC = 500mA

70 3. 0 70 -- 10

-- -- -- -- --

-- -- -- 30 --

V V V mA --

T es t Conditions

V a lue Mi n . Ty p. M a x.

U ni t

POUT c GP
N ote:

f = 1215 -- 1400MHz f = 1215 -- 1400MHz f = 1215 -- 1400MHz = =
1 50µ Sec 5%

PIN = 40W PIN = 40W PIN = 40W

VCC = 40V VCC = 40V VCC = 40V

200 45 7.0

-- -- --

-- -- --

W % dB

P u l s e Width D u t y Cycle

T Y P I CA L PERFORMANCE POW ER OUTPUT & COLLECTOR EFFI CIENCY vs FREQUENCY

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A M 12 1 4 -2 00
I M PE D A NC E DATA T YPICAL INPUT IM PEDANCE ZIN ZIN H TYPICAL COLLECTOR LO AD IMPEDANCE ZCL H ZCL L

L

FREQ. L = 1215 MHz M = 1300 MHz H = 1400 MHz

ZIN () 2.7 + j 7.0 3.0 + j 4.8 1.8 + j 1.7

ZCL () 1.7 - j 4.0 1.4 - j 4.0 1.0 - j 2.0 PIN = 40W VCC = 40V Normalized to 50 ohms

TEST CIRCUIT

All dimensions are in millimeters. Substrate 0.025" Thick AL203 (Er C1,C2 : C3 : C4 : C5 :

= 9.8)
C6 C7 C8 L1 L2 : : : : : 620 pF Case B Chip Capacitor 0.1 µF Ceramic Capacitor Feedthru bypass 1200 pF .018" OD Wire - Placement is Critical 4 Turn .018" OD Inductor

0.6 - 4.5 pF Johanson 7475 Variable Capacitor 100 pF Case B Chip Capacitor 100 µF, 63V Electrolytic Capacitor 68 pF Case B Chip Capacitor

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A M 1 2 14 -2 0 0
PACKAGE MECHANICAL DATA

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

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