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Part: AM1214-175
Category:
RF & Microwaves
-> Transistors
-> Power Transistors
-> L-Band Radar Transistors
Description: L-band Radar Applications RF & Microwave Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download AM1214-175 datasheet File size : 42 kB
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Datasheet text preview:
AM1214-175
. . . . . . . .
R F & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
REF RACTO RY/G OL D METALLIZATION EM IT TER SITE BALLASTED 3 :1 VSWR CAPABILITY L O W THERMAL RESISTANCE I NPUT/OUTPUT MATCHING O VERL AY GEOMETRY M ETAL /CERAM IC HERMETIC PACKAGE PO UT = 160 W MIN. WITH 7.3 dB GAIN
. 40 0 x .500 2LFL (S038) hermetically sealed O R D E R CODE AM1214-175 B RA ND IN G 1214-175
D ES C R I PT I O N The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-175 is supplied in the BIGPACTM Herm e t i c Metal/Ceramic package with internal Input/Output matching structures. A B SO L U T E MAXIMUM RATINGS (T c as e = 25 ° C )
S ym b o l P a ra m e t er
P I N CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
V al u e
U ni t
PDI SS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC 100°C)
330 14 45 250 - 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
T H E RM A L DATA RTH(j-c) Junction-Case Thermal Resistance* 0.45 °C/W
*Applies only to rated RF amplifier operation
September 1992
1/6
A M 1 2 14 -1 7 5
ELECTRICAL SPECIFICATIONS (T c a s e = 25 ° C ) STATIC
S ym b o l T e st Conditions V a lue Mi n . Ty p. M a x. U ni t
BVCBO BVEBO BVCES I C ES hFE
IC = 60mA IE = 10mA IC = 100mA VCE = 40V VCE = 5V
IE = 0mA IC = 0mA
65 3.5 65 --
-- -- -- -- --
-- -- -- 25 150
V V V mA --
IC = 5A
15
DYNAMIC
S ym b o l T es t Conditions V a lue Mi n . Ty p. M a x. U ni t
POUT c GP
N ote:
f = 1215 -- 1400MHz f = 1215 -- 1400MHz f = 1215 -- 1400MHz = =
1 50µ S 5%
PIN = 30W PIN = 30W PIN = 30W
VCC = 40V VCC = 40V VCC = 40V
160 45 7.3
180 50 7.8
-- -- --
W % dB
P u l s e Width D u t y Cycle
2/6
A M 12 1 4 -1 75
TYPICAL PERFORMANCE RELATIVE POWER OUTPUT AND COLLECTOR EFFICIENCY vs CO LLECTO R VOLTAGE
T YPICAL BROADBAND POWER AMPLIFIER
M AXIM UM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
3/6
A M 1 2 14 -1 7 5
I M PE D A NC E DATA
TYPICAL INPUT IM PEDANCE
ZIN
PIN = 30 W VCC = 40 V Z0* = 50 ohms
FREQ. L = 1215 MHz M = 1300 MHz H = 1400 MHz
ZIN () 4.0 + j 3.5 2.0 + j 3.0 1.5 + j 4.0
ZCL () 2.0 - j 2.5 2.0 - j 1.5 1.5 - j 2.5
TYPICAL COLLECTOR LO AD IMPEDANCE
ZCL
PIN = 30 W VCC = 40 V Z0* = 50 ohms
*Normalized Impedance
4/6
A M 12 1 4 -1 75
T E S T CIRCUIT
Ref. Dwg. No.: 104-001280
PACKAGE MECHANICAL DATA
5/6
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