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Part: AM1214-100
Category:
RF & Microwaves
-> Transistors
-> Power Transistors
-> L-Band Radar Transistors
Description: L-band Radar Applications RF & Microwave Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download AM1214-100 datasheet File size : 42 kB
Request For quote: Find where to buy AM1214-100
Datasheet text preview:
AM1214-100
R F & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REF RACTO RY/G OL D METALLIZATION EM IT TER SITE BALLASTED L O W THERMAL RESISTANCE I NPUT/OUTPUT MATCHING O VERL AY GEOMETRY M ETAL /CERAM IC HERMETIC PACKAGE PO UT = 100 W MIN. WITH 6.0 dB GAIN
. 40 0 x .500 2LFL (S038) hermetically sealed O R D E R CODE AM1214-100 BR AN DI NG 1214-100
D E SC R I P T I O N The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM1214-100 is supplied in the grounded IMPACTM h e rm e ti c metal/ceramic package with internal input/output matching structures. A B SO L U T E MAXIMUM RATINGS (T c as e = 25°C)
S ym b o l P a ra m e t er
P I N CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
V al u e
U ni t
PDI SS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC 100°C)
270 13.5 32 250 - 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
T H E RM A L DATA RTH(j-c) Junction-Case Thermal Resistance* 0.55 °C/W
*Applies only to rated RF amplifier operation
August 1992
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A M 1 2 14 -1 0 0
ELECTRICAL SPECIFICATIONS (T c a s e = 25 ° C ) STATIC
Va l u e S ym b o l T e st Conditions M in. T yp . M ax . U ni t
BVCBO BVEBO BVCES I C ES hFE
IC = 50mA IE = 10mA IC = 100mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA VCE = 32V IC = 5A
65 3. 5 65 -- 15
-- -- -- -- --
-- -- -- 20 --
V V V mA --
DYNAMIC
V a lue S ym b o l T es t Conditions Mi n . Ty p. M a x. U ni t
POUT c GP
N ote:
f = 1215 -- 1400MHz f = 1215 -- 1400MHz f = 1215 -- 1400MHz = =
1 00µ Sec 1 0%
PIN = 25W PIN = 25W PIN = 25W
VCC = 28V VCC = 28V VCC = 28V
100 50 6.0
-- -- --
-- -- --
W % dB
P u l s e Width D u t y Cycle
P A CK A G E MECHANICAL DATA
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A M 12 1 4 -1 00
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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