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Part: S1NBB80
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Rectifiers
Description: General Purpose Rectifiers/ Dip Bridges
Company: Shindengen America, Inc.
Datasheet: Download S1NBB80 datasheet File size : 59 kB
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Datasheet text preview:
SHINDENGEN
General Purpose Rectifiers
SMT Bridges
S1NBB80
800V 1A
OUTLINE DIMENSIONS
Case : 1NA Unit : mm
RATINGS
Absolute Maximum Ratings (If not specified Ta=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Glass-epoxy substrate, Ta=26 *1 IO 50Hz sine wave, R-load, Glass-epoxy substrate, Ta=25 *2 IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Peak Surge Forward Current I2t Current Squared Time 1mst10ms@Tj=25 Electrical Characteristics (If not specified Ta=25) Item Symbol Conditions VF Forward Voltage IF=0.5A, Pulse measurement, Rating of per diode IR Reverse Current VR=VRM, Pulse measurement, Rating of per diode jl junction to lead Æ Æja junction to ambient *1 Thermal Resistance Æja junction to ambient *2
*1 : Glass epoxy substrate (pattern area : 324mm2) *2 : Glass epoxy substrate (pattern area : 101mm2)
Ratings -40 to 150 150 800 1 0.84 50 6 Ratings Max 1.05 Max 10 Max 15 Max 68 Max 84
U nit V A A A A2s U nit V ÊA /W
Copyright & Copy;2002 Shindengen Electric Mfg. Co., Ltd.
S1NBB80
10
Forward Voltage
Pulse measurement per diode
5
IF [A]
2 Ta=150°C[TYP] Ta= 25°C[TYP] 1
Forward Current
0.5
0.2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage
VF [V]
S1NBB80
2
Forward Power Dissipation
SIN
PF [W] Forward Power Dissipation
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
IO [A] Average Rectified Forward Current
Tj = 150°C
Others parts begin by s1
S1-1 S1-2 S1-3 S1-4 S1-5 S1-6
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