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Part: DF10SC4M
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Barrier Rectifiers
Description:
Company: Shindengen America, Inc.
Datasheet: Download DF10SC4M datasheet File size : 59 kB
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Datasheet text preview:
SHINDENGEN
Schottky Rectifiers (SBD)
Dual
DF10SC4M
40V 10A
FEATURES SMT Tj150 PRRSM avalanche guaranteed High current capacity with Small Package APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment Telecommunication
OUTLINE DIMENSIONS
Case : STO-220 Unit : mm
RATINGS
Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Storage Temperature T stg Operating Junction Temperature Tj M aximum Reverse Voltage VRM Repeti ti ve Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, With heatsink, Tc=125
Peak Surge Forward Current Repeti ti ve Peak Surge Reverse Power
I FSM PRRSM
50Hz sine wave, R-load, Rating for each diode Io/2, On Al-Cu substrate, Ta=33 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125 Pulse width 10Ês, Rating of per diode, Tj=25
Ratings -55`150 150 40 45 10 6.8 100 330 Ratings M ax.0.55 M ax.3.5 T yp.180 Max.3 M ax.25
Unit V V A A
W
Electrical Characteristics (If not specified Tc=25) Item Symbol Conditions Forward Voltage VF I F =5A , Pulse measurement, Rating of per diode Reverse Current IR VR=VRM , Pulse measurement, Rating of per diode Junction Capacitance Cj f=1M Hz, VR=10V, Rating of per diode T hermal Resistance Æjc junction to case Æja junction to ambient, On Al-Cu substrate
Unit V mA pF /W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
DF10SC4M
Forward Voltage
10
Forward Current IF [A]
Tc=150 °C [MAX] Tc=150 °C [TYP] Tc=25 °C [MAX] Tc=25 °C [TYP] 1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
DF10SC4M
Junction Capacitance
f=1MHz Tc=25°C TYP per diode
1000
Junction Capacitance Cj [pF]
100
0.1
1
10
Reverse Voltage VR [V]
DF10SC4M
1000
Reverse Current
Tc=150 °C [MAX] 100
Tc=150 °C [TYP]
Reverse Current IR [mA]
Tc=125 °C [TYP] 10
Tc=100 °C [TYP]
1
Tc=75 °C [TYP]
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
DF10SC4M
20
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
15
DC D=0.05 0.1 0.2 0.3
10 0.5
5
SIN 0.8
0
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150°C
0 VR tp D=tp /T T
Others parts begin by df
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