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Part: D1UBA80
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Rectifiers
Description: General Purpose Rectifiers/ Dip Bridges
Company: Shindengen America, Inc.
Datasheet: Download D1UBA80 datasheet File size : 222 kB
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Datasheet text preview:
SHINDENGEN
General Purpose Rectifiers
SMT Bridges
D1UBA80
800V 1A
OUTLINE DIMENSIONS
Case : SOPAUnit : mm
RATINGS
Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, On alumina substrate Ta=25
Peak Surge Forward Current Current Squared Time
IFSM I2t
50Hz sine wave, R-load, On glass-epoxy substrate Ta=25 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 1mst 10ms Tj=25
Ratings -55`150 150 800 1.0 0.8 30 3 Ratings Max 0.95 Max 10 Max 25 Max 62.5 Max 80
Unit V A
A2s
A
Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions VF Forward Voltage IF=0.4A, Pulse measurement, Rating of per diode IR Reverse Current VR=800v, Pulse measurement, Rating of per diode Æjl junction to lead Æja junction to ambient, On alumina substrate Thermal Resistance
junction to ambient, On glass-epoxy substrate
Unit V ÊA /W
Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd
D1UBA80
50
Forward Voltage
Pulse measurement per diode
20
IF [A] Forward Current
10
5
2
Tl=150°C [TYP] Tl= 25°C [TYP]
1
0.5
0.2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage
VF [V]
D1UBA80
2.5
Forward Power Dissipation
2
SIN
PF [W] Forward Power Dissipation
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
Io [A] Average Rectified Forward Current Tj =150°C
D1UBA80
40
Peak Surge Forward Capability
I FS M
10ms
35
10ms
1 cycle
IFSM
30
non-repetitive, sine wave, Tj=25°C before surge current is applied
[A] Peak Forward Surge Current
25 20 15 10 5 0
1
2
5
10
20
50
100
Number of Cycles
[cycle]
D1UBA80
1.6
Derating Curve
Average Rectified Forward Current IO [A]
1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0 Alumina substrate 50.8mm×50.8mm Soldering land 1mm×1mm Conductor layer 20µm Substrate thickness 0.64mm
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = VRM
Others parts begin by d1
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