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Part: PC-354N1T
Category:
Description: Opaque, Mini-flat Package, ac Input Type Photocoupler
Company: Sharp Microelectronics of the Americas
Datasheet: Download PC-354N1T datasheet File size : 404 kB
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Datasheet text preview:
PC354NT
PC354NT
s Features
1. AC inputs
Opaque*, Mini-flat Package, AC Input Type Photocoupler
s
mne Dimensions
~,M~025 ~. I n t e r n a l connection diagram
(Unit : mm)
2. Opaque type, mini-flat package
PC354NT (l-channel) .3. Subminiature type (The volume is smaller than that of our c o n v e n t i o n a l DIP type by as far as 30%.) 4. Isolation voltage between input and output PC354NT" " "v)., :3 750vrm. * Employs double transfer mold technology 9 Applica*ns 1. Hybrid substrates that require high density mounting. 2. Programmable controllers
a
@@
o@
~ Ancule/ Cathode B Anode/ Cathcde @ Emitter @ Collector
"In tie abce of confimatior by dence WIfiMtIon ~k, WARP tzkes m wnsibilti b any dkb hat mur In Squlpmnt using any of WRPS devices, *W In ca~lcgs, dats Ms, etc. ~ntsct WAW In cfder to OMO he latest vemim of h *VICS wifI* Wfe beh using sny WAWS deviw."
I
301
PC354NT
s AHuta Maximum Rams
(Ta=25°C)
Parameter Rating Symbol Unit *50 F o r w a r d current 1P mA *I Input "] Peak forward current I [:11 A P o w e r dissipation P 70 mtty C o l l e c t o r -emitter voltage VCE{) 35 L' ~ ~,+n,,, Lmltter -collector voltage Vsco 1 6 * -- C o l l e c t o r current Ic 50 mA [ ] Collector power dissipation ]~ 150 mW T o t a l po!ver dissipation P,,,t 170 mW * zI s o l a t i o n voltage v,.<) 3 750 b',,,,. ODeratinQ temperature I T,,,,, 130 to +100 I `c S t o r a g e temperature 140 to +125 T,,~ "c * 3 Soldering temperature T<,,, 260 `r
"uLpu,
*1 Pulse \vidth <100" #s, Dut}, ratio *2 40 to 60%RH, AC for 1 minute *3 For 10 senconds Classification of
current transfer ratio (CrR
0,001
)
N C o n d i t i o n s : 1,:= } lMA, YLF 51', `~a?j'(;
s Electro-oel Characteristics
Input Parameter Fonvard voltage T e r m i n a l capacitance Collector dark ~urrent Collector -emitter breakdown voltage Emitter -collector breakdown voltage C u r r e n t transfer ratio Collector -emitter saturation voltage Isolation resistance F l o a t i n g capacitance R e s p o n s e time 1 Riw time Fall time Symbol
~F
(Ta = 25°C )
Conditions f20mA V = O , f=lkHz VCE = 20V, IF= O Ic=O.lmA, IF=O IE=1OPA, IF=() IF= * lmA, VCE=5V IF= +20mA, Ic= lmA DC500V, 40 to 60%RH V=O, f=lMHz VCE=2V, Ic=2mA R[. =1OOQ
IF=
MIN. -- -- 35 6 20 5xlrl!~ --
output
Transfer charac teristics
c! ICE() f3vcK() BVE:LO CTR VCE,=, I RISO cl t,
tf
TYP. 1.2 30
-- 0.1 1011 0.6 ,4 3
hlAX. 1.4 25010 7 -- -- 400 0.2 . 1.0 18 18
Unit v pF A I? v % v a pF #s ,uS
302
FC354NT
*.2 Diada Po-~va. Ambiant Tamparatura
60 50 .40 \ 30 20 10 n
\
`~ 30
,,
0
25 50 7.5 100 125
`~ 30
0
50
100
A m b i e n t temperature T, ("C)
Ambient temperature T. ("(')
Fi9.4Total Powar~m Ambiant T~ra
300
250
J
L
150 200 170 1 oil 150
100 50 \ 50
n
`:30
o
2,5
50
75
100
125
,, ~ 30
()
25
50
100
Ambient temperature T:, (SC )
Ambierlt temperature T, (~) Fig. 6
Fig.5Paak Forward ~w. W Ratio
Forward ~ va. F-ard Voltaga
w
I
I
I
I
o Nty ratio
0.5
1.0
15
2.0
2.5
:30
3.5
F o r w a r d voltage VF (k')
303
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