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Part: IRFM150
Category:
Description: 100V VDSS N-channel Fet (field Effect Transistor)
Company: Semelab Plc
Datasheet: Download IRFM150 datasheet File size : 317 kB
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Datasheet text preview:
LAB
MECHANICAL DATA Dimensions in mm (inches)
13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
SEME
2N7224 IRFM150
NCHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
· REPETITIVE AVALANCHE RATING · ISOLATED AND HERMETICALLY SEALED · ALTERNATIVE TO TO-3 PACKAGE
100V 34A 0.070W
1
2
3
0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC
2 0.07 (0.790) 2 0.32 (0.800)
3.81 (0.150) BSC
· SIMPLE DRIVE REQUIREMENTS · EASE OF PARALLELING
TO254AA Package
Pin 1 Drain Pin 2 Source Pin 3 Gate
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg RqJC RqJCS RqJCA Gate Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Case to Sink (Typical) Thermal Resistance Junction-to-Ambient
2
±20V (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) 34A 21A 136A 150W 1.2W/°C 150mJ 5.5V/ns 55 to 150°C 0.83°C/W 0.21°C/W 48°C/W
Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 25V , L ³ 200mH , RG = 25W , Peak IL = 34A , Starting TJ = 25°C 3) @ ISD £ 34A , di/dt £ 70A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 2.35W
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk
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LAB
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage DBVDSS Temperature Coefficient of
SEME
2N7224 IRFM150
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS ³ 15V VGS = 0 VGS = 20V VGS = 20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDS ID =34A VDS = 0.5BVDS VDD = 50V ID = 34A RG = 2.35W ID = 34A ID = 21A ID = 34A ID = 250mA IDS = 21A VDS = 0.8BVDSS TJ = 125°C ID = 1mA
Min.
100
Typ.
Max.
Unit
V
Reference to 25°C
DTJ
RDS(on)
Breakdown Voltage Static Drain Source OnState Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Continuous Source Current Pulse Source Current
2
0.13 0.070 0.081 2 9 25 250 100 100 3700 1100 200 50 8 15 125 22 65 35 190 170 130 34 136 4
V / °C
W
V )W(
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VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS
S(W
mA
nA
pF
nC nC
ns
SOURCE DRAIN DIODE CHARACTERISTICS A V ns
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time
IS = 34A VGS = 0 IF = 34A
TJ = 25°C TJ = 25°C Negligible 8.7 8.7
1.8 500 2.9
di / dt £ 100A/ms VDD £ 50V
mC
PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire)
nH
Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk
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