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Part: IRFM054
Category:
Description: 60V VDSS N-channel Fet (field Effect Transistor)
Company: Semelab Plc
Datasheet: Download IRFM054 datasheet File size : 176 kB
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Datasheet text preview:
IRFM054
MECHANICAL DATA Dimensions in mm (inches)
13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050)
NCHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
· HERMETICALLY SEALED ISOLATED PACKAGE · AVALANCHE ENERGY RATING
30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
1
2
3
2 0.07 (0.790) 2 0.32 (0.800)
60V 35A * 0.027
0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC
· SIMPLE DRIVE REQUIREMENTS
3.81 (0.150) BSC
TO254AA Metal Package
Pin 1 Drain Pin 2 Source Pin 3 Gate
· ALSO AVAILABLE IN TO220 METAL AND SURFACE MOUNT PACKAGES · EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RJC RCS RJA Gate Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature measured 1/16" (1.6mm) from case for 10 sec. Thermal Resistance Junction to Case Thermal Resistance Case to Sink (Typical) Thermal Resistance Junction to Ambient (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) ±20V 35A* 35A 220A 150W 1.2W/°C 480mJ 4.5V/ns 55 to 150°C 300°C 0.83°C/W 0.21°C/W 48°C/W
Notes 1) Repetitive Rating Pulse width limited by Maximum Junction Temperature 2) @ VDD = 25V , L 450µH , RG = 25 , Peak IL = 35A , Starting TJ = 25°C 3) @ ISD 35A , di/dt 200A/µs , VDD BVDSS , TJ 125°C , SUGGESTED RG = 2.35 * ID Current limited by pin diameter.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/94
IRFM054
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage BVDSS Temperature Coefficient of TJ RDS(on) Breakdown Voltage Static Drain Source OnState Resistance 2 Forward Transconductance
2
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = 20V ID = 35A ID = 250µA IDS = 35A VDS = 0.8BVDSS TJ = 125°C ID = 1mA
Min.
60
Typ.
Max.
Unit
V
Reference to 25°C
0.68 0.027 2 20 25 250 100 100 4600 2000 340 12 80 20 34 180 45 105 33 180 100 100 35* 220 4
V / °C V )( S( µA nA
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss CDC Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS
Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain Case Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge Turn On Delay Time Rise Time TurnOff Delay Time Fall Time
VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 35A VDS = 0.5BVDSS VDD = 30V ID = 35A RG = 2.35
pF
nC
ns
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current
1
A V ns µC
Diode Forward Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Forward TurnOn Time
2
IS = 35A VGS = 0 IF = 35A
TJ = 25°C TJ = 25°C Negligible 8.7 8.7
2.5 280 2.2
di / dt 100A/µs VDD 50V
PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from 6mm down drain lead to centre of die Internal Source Inductance
Measured from 6mm down source lead to source bond pad
nH
Notes 1) Repetitive Rating Pulse width limited by Maximum 2) Pulse Test: Pulse Width 300µs, 2% Junction Temperature * IS Current limited by pin diameter.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/94
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