Details and datasheet on part: IRF9530-220M

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Part: IRF9530-220M

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Description: 100V VDSS P-channel Fet (field Effect Transistor)

Company: Semelab Plc

Datasheet: Download IRF9530-220M datasheet File size : 178 kB

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Datasheet text preview:
IRF9530-220M
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81
10.41 10.67
PCHANNEL POWER MOSFET FOR HIREL APPLICATIONS
VDSS ID(cont) RDS(on)
FEATURES
0.89 1.14
1 6 .3 8 1 6 .8 9
1 3 .3 9 1 3 .6 4
123
1 2 .7 0 1 9 .0 5
-100V -9.3A 0.31W
1 0 .4 1 1 0 .9 2
2.54 BSC
2.65 2.75
· HERMETICALLY SEALED TO220 METAL PACKAGE · SIMPLE DRIVE REQUIREMENTS
TO220M Metal Package
Pad 1 Gate Pad 2 Drain Pad 3 Source
· LIGHTWEIGHT · SCREENING OPTIONS AVAILABLE · ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD TJ , Tstg RqJC RqJA Gate Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V -9.3A -5.8A -37A 45W 0.36W/°C 55 to 150°C 2.8°C/W max. 80°C/W max.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00
IRF9530-220M
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage DBVDSS Temperature Coefficient of
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS ³ 15V VGS = 0 VGS = 20V VGS = 20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = -9.3A VDS = 0.5BVDSS VDD = -50V ID = -9.3A RG = 7.5W ID = -9.3A ID = -5.8A ID = -9.3A ID = 250mA IDS = -5.8A VDS = 0.8BVDSS TJ = 125°C ID = 1mA
Min.
-100
Typ.
Max.
Unit
V
Reference to 25°C
DTJ
RDS(on)
Breakdown Voltage Static Drain Source OnState Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time
-0.1 0.31 0.36 -2 2.5 -25 -250 -100 100 800 350 125 14.7 1 2 30 7.1 21 60 140 140 140 -9.3 -37 -4
V / °C
W
V )W( S(W
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS
mA
nA
pF
nC nC
ns
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance IS = -9.3A VGS = 0 IS = -9.3A TJ = 25°C di / dt £ 100A/ms VDD £ 50V
(from 6mm down drain lead pad to centre of die)
A V ns
TJ = 25°C
-4.7 250 3 8.7 8.7
mC
nH
(from 6mm down source lead to centre of source bond pad)
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00

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