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Part: IRF240SMD
Category:
Description:
Company: Semelab Plc
Datasheet: Download IRF240SMD datasheet File size : 144 kB
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LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRF240SMD
NCHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
200V 13.9A 0.180W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
· HERMETICALLY SEALED SURFACE MOUNT PACKAGE · SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE.
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1)
9) 6) 4)
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
· SIMPLE DRIVE REQUIREMENTS · LIGHTWEIGHT · HIGH PACKING DENSITIES
SMD1 PACKAGE
Pad 1 Gate Pad 2 Drain Pad 3 Source
Note: IRFNxxx also available with pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJPCB Gate Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical)
2
±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) 13.9A 8.8A 56A 75W 0.6W/°C 450mJ 5.0V/ns 55 to 150°C 300°C 1.67°C/W 4°C/W
Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 50V , L ³ 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25°C 3) @ ISD £ 13.9A , di/dt £ 150A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 9.1W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00
LAB
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage DBVDSS Temperature Coefficient of
SEME
IRF240SMD
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS
1
Min.
200
Typ.
Max.
Unit
V
ID = 1mA
Reference to 25°C ID = 8.8A ID = 13.9A ID = 250mA IDS = 8.8A VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = 20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 13.9A ID = 13.9A 32 2.2 14.2 2 6.1
DTJ
RDS(on)
Breakdown Voltage Static Drain Source OnState Resistance
1
0.29 0.180 0.250 4 25 250 100 100 1300 400 130 60 10.6 37.6 20 152 58 67 13.9 56
V / °C
W
V )W( S(W
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance
VDS ³ 15V VGS = 0
Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate Source Charge 1 Gate Drain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time
1
mA
nA
pF
nC nC
VDS = 0.5BVDSS VDD = 100V ID = 13.9A RG = 9.1W
ns
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current
2
A V ns
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time
IS = 13.9A VGS = 0 IF = 13.9A
TJ = 25°C TJ = 25°C Negligible 0.8 2.8
1.5 500 5.3
di / dt £ 100A/ms VDD £ 50V
mC
PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire)
nH
Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00
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